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arXiv 1111.4330cond-mat.mes-hall
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高磁场下石墨烯纳米带的磁输运

Magnetotransport through graphene nanoribbons at high magnetic fields

S. Minke, S. H. Jhang, J. Wurm, Y. Skourski, J. Wosnitza, C. Strunk, D. Weiss, K. Richter, J. Eroms

摘要:

我们研究了光刻制备的单层石墨烯纳米带在高达60 T的脉冲垂直磁场中的磁电阻,并使用紧束缚模型和几种类型的无序进行了相应的输运模拟。在实验中,我们观察到在高载流子密度的Shubnikov-de Haas振荡和量子霍尔效应,而在低密度的振荡消失,并在高磁场,最初的负磁阻变成强正。在非常高的电场和低载流子密度下的强电阻增加暂时归因于块状石墨烯引线中的场致绝缘状态。比较数值计算结果和实验,我们表明,至少在我们的样品中的边缘无序和体短程杂质是重要的。

英文摘要:

We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and several types of disorder. In experiment, at high carrier densities we observe Shubnikov-de Haas oscillations and the quantum Hall effect, while at low densities the oscillations disappear and an initially negative magnetoresistance becomes strongly positive at high magnetic fields. The strong resistance increase at very high fields and low carrier densities is tentatively ascribed to a field-induced insulating state in the bulk graphene leads. Comparing numerical results and experiment, we demonstrate that at least edge disorder and bulk short-range impurities are important in our samples.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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