Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one of the most important hallmarks of topological surface states, the Dirac linear band dispersion, has been difficult to reveal directly in transport measurements. Here we report experiments on Bi2Te3 nanoribbon ambipolar field effect devices on high-k SrTiO3 substrates, where we achieve a gate-tuned bulk metal-insulator transition and the topological transport regime with substantial surface state conduction. In this regime, we report two unambiguous transport evidences for gate-tunable Dirac fermions through π Berry$'$s phase in Shubnikov-de Haas oscillations and effective mass proportional to the Fermi momentum, indicating linear energy-momentum dispersion. We also measure a gate-tunable weak anti-localization (WAL) with 2 coherent conduction channels (indicating 2 decoupled surfaces) near the charge neutrality point, and a transition to weak localization (indicating a collapse of the Berry$'$s phase) when the Fermi energy approaches the bulk conduction band. The gate-tunable Dirac fermion topological surface states pave the way towards a variety of topological electronic devices.
We study spin-orbit torques and charge pumping in magnetic quasi-one dimensional zigzag nanoribbons with hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences topological phase transition from a trivial band insulator to a quantum spin Hall insulator either by tuning the magnetization direction or the intrinsic spin-orbit coupling. We find that spin-charge conversion efficiency (i.e. spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.
We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting Nb contacts. We observe a gate-tunable critical current ($I_C$) for gate voltages ($V_g$) above the charge neutrality point ($V_{CNP}$), with $I_C$ as large as 430 nA. We also observe MAR peaks in the differential conductance ($dI/dV$) versus DC voltage ($V_{dc}$) across the junction corresponding to sub-harmonic peaks (at $V_{dc} = V_n = 2Δ_{Nb}/en$, where $…
We propose, for the first time, a valley Seebeck effect in gate tunable zigzag graphene nanoribbons as a result of the interplay between thermal gradient and valleytronics. A pure valley current is further generated by the thermal gradient as well as the external bias. In a broad temperature range, the pure valley current is found to be linearly dependent on the temperature gradient while it increases with the increasing temperature of one lead for a fixed thermal gradient. A valley field effect transistor (FET) driven by the temperature gradient is proposed that can turn on and off the pure v…
Band gap control by an external field is useful in various optical, infrared and THz applications. However, widely tunable band gaps are still not practical due to variety of reasons. Using the orthogonal tight-binding method for $π$-electrons, we have investigated the effect of the external electric field on a subclass of monolayer chevron-type graphene nanoribbons that can be referred to as jagged graphene nanoribbons. A classification of such ribbons was proposed and band gaps for applied fields up to the SiO$_2$ breakdown strength ($1$ V/nm) were calculated. According to the tight-binding …
Graphene nanoribbons (GNRs) are promising components in future nanoelectronics due to the large mobility of graphene electrons and their tunable electronic band gap in combination with recent experimental developments of on-surface chemistry strategies for their growth. Here we explore a prototype 4-terminal semiconducting device formed by two crossed armchair GNRs (AGNRs) using state-of-the-art first-principles transport methods. We analyze in detail the roles of intersection angle, stacking order, inter-GNR separation, and finite voltages on the transport characteristics. Interestingly, when…
Recent experiments have measured local uniaxial strain fields in twisted bilayer graphene (TBG). Our calculations found that the finite Berry curvature generated by breaking the sublattice symmetry and the band proximity between narrow bands in these TBG induces a giant Berry dipole of order 10\,nm or larger. The large Berry dipole leads to transverse topological non-linear charge currents which dominates over the linear bulk valley current at experimentally accessible crossover in-plane electric field of $\sim 0.1 {\rm mV} / μ\rm{m}$. This anomalous Hall effect, due to Berry dipole, is strong…
The electronic transport properties of Janus monolayer black arsenic phosphorus (b-AsP) nanoribbons have been investigated utilizing the tight-binding approach. The dependence of electronic structure on edge structures is systematically investigated. (1,3)nb and (3,1)nb b-AsP nanoribbons exhibit flatter edge bands than zigzag and armchair counterparts. The edge band of the armchair ones show double degeneracy. Further, the calculated results show the band gap of the zigzag ribbon with different boundary morphology is widely tunable by transverse electric field. A critical electric field can fu…
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-g…
The large tunability of band gaps and optical absorptions of armchair MoS$_2$ nanoribbons of different widths under bending is studied using density functional theory and many-body perturbation GW and Bethe-Salpeter equation approaches. We find that there are two critical bending curvatures, and the non-edge and edge band gaps generally show a non-monotonic trend with bending. The non-degenerate edge gap splits show an oscillating feature with ribbon width n, with a period delta_n=3, due to quantum confinement effects. The complex strain patterns on the bent nanoribbons control the varying fea…
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intra-layer and inter-layer couplings give important contributions to the Berry-curvature in the $K$ and $-K$ valleys of the Brillouin zone. The inter-layer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the inter-layer contribu…
Tunable Current Rectification Through a Designer Graphene Nanoribbon
CIC nanoGUNE-BRTA（纳米古内中心）；School of Physics, Sun Yat-sen University（中山大学物理学院）；CiQUS, Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares（分子生物化学与材料 singular 研究中心）；Ikerbasque, Basque Foundation for Science（巴斯克科学基金会）
We propose a new type of edges, arising due to the anisotropy inherent in the puckered structure of a honeycomb system such as in phosphorene. Skewed-zigzag and skewed-armchair nanoribbons are semiconducting and metallic, respectively, in contrast to their normal edge counterparts. Their band structures are tunable, and a metal-insulator transition is induced by an electric field. We predict a field-effect transistor based on the edge states in skewed-armchair nanoribbons, where the edge state is gapped by applying arbitrary small electric field $E_z$. A topological argument is presented, reve…
The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated heterojunctions consisting of a graphene quantum dot of varying lengths and widths embedded in a pair of armchair-edged metallic nanoribbons, of the kind recently fabricated via on-surface synthesis. We show that the presence of the quantum dot enables the opening of a width-dependent transport gap, thereby yielding built-in one-dimensional met…
Magnetic carbon nanostructures are currently under scrutiny for a wide spectrum of applications. Here, we theoretically investigate armchair graphene nanoribbons patterned with asymmetric edge extensions consisting of laterally fused naphtho groups, as recently fabricated via on-surface synthesis. We show that an individual edge extension acts as a spin-$\frac{1}{2}$ center and develops a sizable spin-polarization of the conductance around the band edges. The Heisenberg exchange coupling between a pair of edge extensions is dictated by the position of the second naphtho group in the carbon bac…
We study the effects of a vertical electric field on the electronic band structure and transport in multilayer phosphorene and its nanoribbons. In phosphorene, at a critical value of the vertical electric field ($E_c$), the band gap closes and the band structure undergoes a massive-to-massless Dirac fermion transition along the armchair direction. This transition is observable in quantum Hall measurements, as the power-law dependence of the Landau-level energy on the magnetic field $B$ goes from $\sim (n+1/2)B$ below $E_c$, to $\sim [(n+1/2)B]^{2/3}$ at $E_c$, to $\sim [(n+1/2)B]^{1/2}$ above …
Berry phase plays an important role in determining many physical properties of quantum systems. However, a Berry phase altering energy spectrum of a quantum system is comparatively rare. Here, we report an unusual tunable valley polarized energy spectra induced by continuously tunable Berry phase in Bernal-stacked bilayer graphene quantum dots. In our experiment, the Berry phase of electron orbital states is continuously tuned from about pi to 2pi by perpendicular magnetic fields. When the Berry phase equals pi or 2pi, the electron states in the two inequivalent valleys are energetically degen…
Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. We show, through first-principles calculations, that by applying an experimentally accessible transverse electric field (TEF), certain boron and nitrogen periodically co-doped GNRs have tunable topological phases. The tunability arises from a field-induced band inversion due to an opposite response of the conduction- and valance-band states to the electric field. With a spatially-varying applied field, segments of GNRs of distinct topological phases are created, resulting in a field-programmable array of topolo…
We study the emergence of electronic non-trivial topological flat bands in time-periodically driven strained graphene within a tight binding approach based on the Floquet formalism. In particular, we focus on uniaxial spatially periodic strain since it can be mapped onto an effective one-dimensional system. Also, two kinds of time-periodic driving are considered: a short pulse (delta kicking) and a sinusoidal variation (harmonic driving). We prove that for special strain wavelengths, the system is described by a two level Dirac Hamiltonian. Even though the study case is gapless, we find that t…
Transport of the edge-state electrons along zigzag phosphorene nanoribbons in presence of two impurities/vacancies is analytically investigated. Considering the places of the defects, a number of different situations are examined. When both defects are placed on the edge zigzag chain, as is expected, with changing the energy of the traveling electrons the electrical conductance exhibits a resonance behavior. In this case, for two vacancies the observed resonant peaks become extremely sharp. An amazing behavior is seen when the second vacancy is located along an armchair chain while the first i…
To date, almost all of the discussions on topological insulators (TIs) have focused on two- and three-dimensional systems. One-dimensional (1D) TIs manifested in real materials, in which localized spin states may exist at the end or near the junctions, have largely been unexplored. Previous studies have considered the system of gapped graphene nanoribbons (GNRs) possessing spatial symmetries (e.g. inversion) with only termination patterns commensurate with inversion- or mirror-symmetric unit cells. In this work, we prove that a symmetry-protected $\mathbb{Z}_{2}$ topological classification exi…
Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of one-dimensional nanomaterials offers the lateral stacking offset as an additional parameter for modulating the resulting material properties. Here, we report that the edge states of twisted bilayer zigzag graphene nanoribbons (TBZGNRs) can be tuned with both the twist angle and the stacking offset. Strong edge state variations in the stacking region are first reve…
We report on a theoretical study of electronic and magnetic properties of hydrogen-saturated InSe nanoribbons (H-ZISNs). Based on hybrid-functional first-principles calculations, we find that H-ZISNs exhibit tunable half-metallicity and short-range ferromagnetic order. We first show that p-type doping turns narrow H-ZISNs from semimetal to half-metal with spin-polarization along In-terminated edge. This behavior is further analyzed in terms of a two-band tight-binding model, which provides a tractable description of the H-ZISN electronic structure, and serves as a starting point for the determ…
Based on systematic first-principles density-functional theory (DFT) simulations, we predict that the zigzag GaN nanoribbons (ZGaNNR) can be used both as highly efficient CO detectors as well as spin filters. Our calculations performed both on infinitely long nanoribbons, and also on finite strands, suggest that: (a) CO binds strongly at the edges of ZGaNNRs, and (b) that several of the resultant configurations exhibit half-metallic behavior. We considered various edge-passivation sites and found that all the resultant structures are thermodynamically stable. The metallic, half-metallic, and s…
We employ first-principles calculations based density-functional-theory (DFT) approach to study electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, electrons which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that the metallic behavior is observed for the fo…
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-…
Light-tunable quantum metric non-linear Hall response in Berry dipole semimetals
Centre for Nanotechnology, Indian Institute of Technology Roorkee（印度理工学院鲁尔基分校纳米技术中心）；Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore（印度科学学院固态与结构化学单元）
Recently, porphyrin units have been attached to graphene nanoribbons (Por-GNR) enabling a multitude of possible structures. Here we report first principles calculations of two prototypical, experimentally feasible, Por-GNR hybrids, one of which displays a small band gap relevant for its use as electrode in a device. Embedding a Fe atom in the porphyrin causes spin polarization with a spin ground state $S=1$. We employ density functional theory and nonequilibrium Green's function transport calculations to examine a 2-terminal setup involving one Fe-Por-GNR between two metal-free, small band gap…
We argue that twisted graphene nanoribbons subjected to a transverse electric field can operate as a variety of nanoelectronic devices, such as tunable tunnel diodes with current-voltage characteristics controlled by the transverse field. Using the density-functional tight-binding method to address the effects of mechanical strain induced by the twisting, we show that the electronic transport properties remain almost unaffected by the strain in relevant cases and propose a simplified tight-binding model which gives reliable results. The transverse electric field creates a periodic electrostati…
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication thro…
The topological properties of electronic edge states in time-periodically driven spatially-periodic corrugated zigzag graphene nanoribbons are studied. An effective one-dimensional Hamiltonian is used to describe the electronic properties of graphene and the time-dependence is studied within the Floquet formalism. Then the quasienergy spectrum of the evolution operator is obtained using analytical and numeric calculations, both in excellent agreement. Depending on the external parameters of the time-driving, two different kinds (type I and type II) of touching band points are found, which have…
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K' valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 through applying uniaxial strain to break C3v symmetry. As a result, although the Berry curvature itself is still …
We theoretically investigate topological spin transport of the magnon-polarons in bilayer magnet with two-dimensional square lattices. Our theory is motivated by recent reports on the van der Waals magnets which show the reversible electrical switching of the interlayer magnetic order between antiferromagnetic and ferromagnetic orders. The magnetoelastic interaction opens band gaps and allows the interband transition between different excitation states. In the layered antiferromagnet, due to the interband transition between the magnon-polaron states, the spin Berry curvature which allows the t…
