Fabrication and Characterization of Superconducting Quantum Interference Device using (Bi_{1-x}Sb_x)_2Se_3 Topological Insulator Nanoribbons

Superconducting Quantum Interference Devices Made of Sb-doped Bi2Se3 Topological Insulator Nanoribbons

We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-dimensional subbands. Below the superconducting transition temperature of PbIn electrodes, we observed supercurrent flow through TI NR-based SQUID. The critical current periodically modulates with a m…

Multiple Andreev reflections in topological insulator nanoribbons

Superconducting proximity junctions made of topological insulator (TI) nanoribbons (NRs) provide a useful platform for studying topological superconductivity. We report on the fabrication and measurement of Josephson junctions (JJs) using Sb doped Bi$_2$Se$_3$ NRs in contact with Al electrodes. Aharonov$-$Bohm and Altshuler$-$Aronov$-$Spivak oscillations of the axial magneto-conductance of TI NR were observed, indicating the existence of metallic surface states along the circumference of the TI NR. We observed the supercurrent in the TI NR JJ and subharmonic gap structures of the differential …

Anomalous low-temperature enhancement of supercurrent in topological-insulator nanoribbon Josephson junctions: evidence for low-energy Andreev bound states

We report anomalous enhancement of the critical current at low temperatures in gate-tunable Josephson junctions made from topological insulator BiSbTeSe$_2$ nanoribbons with superconducting Nb electrodes. In contrast to conventional junctions, as a function of the decreasing temperature $T$, the increasing critical current $I_c$ exhibits a sharp upturn at a temperature $T_*$ around 20$\%$ of the junction critical temperatures for several different samples and various gate voltages. The $I_c$ vs. $T$ demonstrates a short junction behavior for $T>T_*$, but crosses over to a long junction behavio…

Topological insulator nanoribbon Josephson junctions: evidence for size effect in transport properties

We have used Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapor Deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our devices we observe a pronounced reduction of the Josephson critical current density $J_c$ by reducing the width of the junction, which in our case corresponds to the width of the nanoribbon. Because the topological surface states extend over the entire circumference of the nanoribbon, the superconducting transport associated to them is carried by modes on both the top and bottom surfaces of the nanoribbon. We show that …

用于低温扫描隧道显微镜的超导纳米结构的非原位制备

Ex Situ Fabrication of Superconducting Nanostructures for Low-Temperature STM

本文提出将非原位光刻与原位超高真空解理翻转相结合，制备原子级清洁的拓扑绝缘体-超导体纳米结构，并通过STM/STS验证垂直邻近耦合，为拓扑超导研究提供可扩展平台。

High transparency Bi2Se3 topological insulator nanoribbon Josephson junctions with low resistive noise properties

Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapour Deposition, have been used to fabricate high quality Josephson junctions with Al superconducting electrodes. The conductance spectra (dI/dV) of the junctions show clear dip-peak structures characteristic of multiple Andreev reflections. The temperature dependence of the dip-peak features reveals a highly transparent Al/Bi$_2$Se$_3$ topological insulator nanoribbon interface and Josephson junction barrier. This is supported by the high values of the Bi$_2$Se$_3$ induced gap and of I$_c$R$_n$ (I$_c$ critical current, R$_n$ normal r…