Nonlinear current voltage characteristics and in some cases also step like characteristics were observed in diamond like carbon films. We suggest that the transport mechanism is tunneling between conducting nanoparticles in the films and the observation of step like structures is a manifestation of Coulomb blockade found for the first time in these films. We point out that the origin of similar current voltage characteristics observed in other carbon structures can be also Coulomb blockade phenomenon.
Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained for the first time. Direct observation using combined ultraviolet photoelectron spectroscopy/field emission spectroscopy (UPS/FES) proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical vapour deposited (CVD) diamond was at conduction band minimum (CBM) utilising negative electron affinity (NEA). The significance of the result is that not only does it prove the utilisation of NEA as the dominant factor for the extremely low-t…
We observe the electron spin resonance of conduction electrons in boron doped (6400 ppm) superconducting diamond (Tc =3.8 K). We clearly identify the benchmarks of conduction electron spin resonance (CESR): the nearly temperature independent ESR signal intensity and its magnitude which is in good agreement with that expected from the density of states through the Pauli spin-susceptibility. The temperature dependent CESR linewidth weakly increases with increasing temperature which can be understood in the framework of the Elliott-Yafet theory of spin-relaxation. An anomalous and yet unexplained…
We present the electrical transport characteristics of a batch of nano-crystalline diamond films of varying nitrogen concentrations and explain the conduction mechanism by the disordered quasi-superlattice model applied to semiconductor heterostructures. Synthesized by the hot filament chemical vapour deposition technique, the degree of structural disorder in the films, confirmed from Raman spectroscopy, is found to be controllable, resulting in the transition of conduction mechanism from localized and activated to the metallic conduction regime. Hence through high field magneto-resistance mea…
We report the results of theoretical investigations of low frequency tunneling current noise spectra component (1/f^α). Localized states of individual impurity atoms play the key role in low frequency tunneling current noise formation. It is found that switching "on" and "off" of Coulomb interaction of conduction electrons with one or two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum 1/f^α. Power law exponent in different low frequency ranges depends on the relative values of Coulomb interaction of conduction electrons with differen…
The energetic evaluations of graphite-to-diamond transition by electron irradiation are performed. The heat conduction problem is solved for the diamond synthesis when a pulse-periodic source of energy is located within a graphite cylinder; time dependences of temperature and pressure are found. It is shown, that the temperatures and pressures implemented in graphite are sufficient for graphite-to-diamond transition under electron bombardment.
Ultra-wide bandgap and the absence of shallow dopants are the major challenges in realizing diamond based electronics. However, the surface functionalization offers an excellent alternative to tune electronic structure of diamonds. Herein, we report on tuning the surface electronic properties of hydrogenated polycrystalline diamond films through oxygen functionalization. The hydrogenated diamond (HD) surface transforms from hydrophobic to hydrophilic nature and the sheet resistance increases from ~ 8 kohms/sq. to over 10 Gohms/sq. with progressive ozonation. The conductive atomic force microsc…
Graphene/(Poly)vinyl alcohol (PVA) composite film with thickness $60 μm$ were synthesized by solidification of a PVA solution comprising of dispersed graphene nanosheets. The close proximity of the graphene sheets enables the fluctuation induced tunneling of electrons to occur from one sheet to another. The dielectric data show that the present system can be simulated to a parallel resistance-capacitor network. The high frequency exponent of the frequency variation of the ac conductivity indicates that the charge carriers move in a two-dimensional space. The sample preparation technique will b…
Renormalization of the electronic band gap due to electron-phonon coupling in the tetrahedral semiconductors diamond, silicon and cubic silicon carbide is studied from first principles. There is a marked difference between the coupling of the vibrational state to the valence band maximum and to the conduction band minimum. The strength of phonon coupling to the valence band maximum is similar between the three systems and is dominated by vibrations that change the bond length. The coupling strength to the conduction band minimum differs significantly in diamond, silicon carbide and silicon. In…
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level relative to the Fermi energy of conduction electrons. We argue that our results can explain the large tunneling timescales observed in experiments on random telegraph signals in ${\rm Si}$ metal-oxide-semiconductor field effect transistors.
We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed oxygen ions are moved into the oxide by either flood gun electron bombardment or by thermal annealing. The former, if sufficiently energetic, results in locally well defined conduction band onsets at ~1 V, while the latter results in a progressively higher local conduction band onset, exceeding 2.3 V for 500 and 600 C thermal anneals.
1. Introduction 2. Molecular dynamics simulation of amorphous carbon structures 3. Atomistic simulation of the bombardment process during the BEN phase of diamond CVD 4. Growth of amorphous silicon 5. One-dimensional hopping in disordered organic solids
We used high order harmonics of a femtosecond titanium-doped sapphire system (pulse duration 25 fs) to realise Ultraviolet Photoelectron Spectroscopy (UPS) measurements on diamond. The UPS spectra were measured for harmonics in the range 13 to 27. We also made ab initio calculations of the electronic lifetime of conduction electrons in the energy range produced in the UPS experiment. Such calculations show that the lifetime suddenly diminishes when the conduction electron energy reaches the plasmon energy, whereas the UPS spectra show evidence in this range of a strong relaxation mechanism wit…
The transferred-electron oscillator (TEO) is a device used in microwave applications that utilizes the negative differential mobility (NDM) effect to generate continuous oscillations. Recently, NDM was observed in intrinsic single-crystalline chemical vapor deposition (SC-CVD) diamond. The occurrence was explained by the electron repopulation between its different conduction band valleys. This paper presents the results of constructing a diamond TEO based on the NDM effect. A series of experiments has been performed for varying voltages, temperatures and resonator parameters on three SC-CVD di…
We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ~3 hours. By measuring the photoexcited Hall effect we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at ~1.9 eV. These findings shed new light on sub-bandgap states in nitrogen doped single-crystal diamond.
The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content had been observed by atomic force micr…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact…
Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coal…
The letter introduces a diagram that rationalizes tunneling atomic force microscopy (TUNA) observations of electron emission from polycrystalline diamonds as described in recent publications. The direct observations of electron emission from grain boundary sites by TUNA could indeed be evidence of electrons originating from grain boundaries under external electric fields. At the same time, from the diagram it follows that TUNA and field emission schemes are complimentary rather than equivalent for results interpretation. It is further proposed that TUNA could provide better insights into emiss…
We investigate the relaxation and conduction mechanism of Ba0.90Sr0.10TiO3 (BST) ceramic, synthesized by the solid state reaction method. The dielectric and relaxation properties are analyzed in the temperature range of 380-450°C with alternative current in the frequency range of 20Hz-1MHz. Variation of dielectric constant, ε', with temperature shows a normal ferroelectric transition at Tc=95°C with a weak degree of diffuseness. The modified Cole-Cole equation is used to describe all contributions to the relaxation mechanism. The frequency exponent m(ω,T) deduced from experimental data of the …
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $ϕ_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an e…
Diamondoids are a unique form of carbon nanostructure best described as hydrogen-terminated diamond molecules. Their diamond-cage structures and tetrahedral sp3 hybrid bonding create new possibilities for tuning electronic band gaps, optical properties, thermal transport, and mechanical strength at the nanoscale. The recently-discovered higher diamondoids (each containing more than three diamond cells) have thus generated much excitement in regards to their potential versatility as nanoscale devices. Despite this excitement, however, very little is known about the properties of isolated diamon…
We report the results of theoretical investigations of tunneling current noise spectra in a wide range of applied bias voltage. Localized states of individual impurity atoms play an important role in tunneling current noise formation. It was found that switching "on" and "off" of Coulomb interaction of conduction electrons with two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum ($1/f^α$) and also results on high frequency component of tunneling current spectra (singular peaks appear).
The electron-phonon interaction contribution to the electronic energies is included in density functional total energy calculations with ab initio pseudopotentials via the Allen formalism [Phys. Rev. B 18, 5217 (1978)] to obtain temperature dependent electronic structure of diamond and silicon. This method allows us to obtain the thermally-averaged ab initio electronic structure in a straightforward and computationally inexpensive way. Our investigations on the finite temperature electronic structure of diamond and silicon lead to a new criterion, temperature transferability, which is required…
The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) and confocal micro-Raman/Photoluminescence (PL) imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands i…
This review summarizes the current studies of the thermal transport properties of one-dimensional (1D) carbon nanomaterials and nanoarchitectures. Considering different hybridization states of carbon, emphases are laid on a variety of 1D carbon nanomaterials, such as diamond nanothreads, penta-graphene nanotubes, supernanotubes, and carbyne. Based on experimental measurements and simulation/calculation results, we discuss the dependence of the thermal conductivity of these 1D carbon nanomaterials on a wide range of factors, including the size effect, temperature influence, strain effect, and o…
The protocols for the control and readout of Nitrogen Vacancy (NV) centres electron spins in diamond offer an advanced platform for quantum computation, metrology and sensing. These protocols are based on the optical readout of photons emitted from NV centres, which process is limited by the yield of photons collection. Here we report on a novel principle for the detection of NV centres magnetic resonance in diamond by directly monitoring spin-preserving electron transitions through measurement of NV centre related photocurrent. The demonstrated direct detection technique offers a sensitive wa…
We have characterized the conductivity of carbon nanotubes (CNT) fibers enriched in semiconducting species as a function of temperature and pulsed laser irradiation of 266 nm wavelength. While at high temperatures the response approaches an Arrhenius law behavior, from room temperature down to 4.2 K the response can be framed, quantitatively, within the predictions of the fluctuation induced tunneling which occurs between the inner fibrils (bundles) of the samples and/or the elementary CNTs constituting the fibers. Laser irradiation induces an enhancement of the conductivity, and analysis of t…
Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4x1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a conductance per square as high as 100 uS, with global conduction despite numerous surface steps. A complete growth of indium wires up to both the surface steps and the lithographically printed electrodes is essential for the macroscopic transport. The system exhibits a metal-insulator transition at 130 K, consistent with a recent ultraviolet photoemission st…
To investigate leakage current density versus electric field characteristics, epitaxial EuTiO3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition and were post-annealed in a reducing atmosphere. This investigation found that conduction mechanisms are strongly related to temperature and voltage polarity. It was determined that from 50 to 150 K the dominant conduction mechanism was a space-charge-limited current under both negative and positive biases. From 200 to 300 K, the conduction mechanism shows Schottky emission and Fowler-Nordheim tunneling behaviors for the …
We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer at the barrier-electrode interface. It is shown that momentum selection due to the insulating barrier and conduction via quantum well states in the spacer, mediated by diffusive scattering caused by disorder, are essential features required to explain the observed period of oscillation in the TMR ratio and its asymptotic value for thick nonmagnetic spacer.
Polarons are quasi-particles made from electrons interacting with vibrations in crystal lattices. They derive their name from the strong electron-vibration polar interaction in ionic systems, that induces associated spectroscopic and optical signatures of such quasi-particles in these materials. In this paper, we focus on diamond, a non-polar crystal with inversion symmetry which nevertheless shows characteristic signatures of polarons, better denoted "nonpolarons" in this case. The polaronic effects are produced by short-range crystal fields with only a small influence of long-range quadrupol…
In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at…
We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in terms of a set of coupled equations for the electron envelope functions. Its connection with other models present in literature is discussed. As an application we consider the case of a Resonant Interband Tunneling Diode, demonstrating the ability of the model to reproduce the expected behaviour of the current as a function of the applied voltage
Silver nanoparticles embedded in a dielectric matrix are investigated for their potential as broadband-absorbing optical sensor materials. This contribution focuses on the electrical properties of silver nanoparticles at various morphological stages. The electrical current through thin films, consisting of silver nanoparticles, was characterized as a function of film thickness. Three distinct conductivity zones were observed. Two relatively flat zones ("dielectric" for very thin films and "metallic" for films thicker than 300 - 400 Å) are separated by a sharp transition zone where percolation …
We study the effect of strain on magnetic tunnel junctions (MTJ) induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier,…
Interest in magnetic-tunnel junctions has prompted a re-examination of tunneling measurements through thin insulating films. In any study of metal-insulator-metal trilayers, one tries to eliminate the possibility of pinholes (small areas over which the thickness of the insulator goes to zero so that the upper and lower metals of the trilayer make direct contact). Recently, we have presented experimental evidence that ferromagnet-insulator-normal trilayers that appear from current-voltage plots to be pinhole-free may nonetheless in some cases harbor pinholes. Here, we show how pinholes may aris…
We have studied the internal friction and the relative change in the speed of sound of amorphous diamond-like carbon films prepared by pulsed-laser deposition from 0.3 K to room temperature. Like the most of amorphous solids, the internal friction below 10 K exhibits a temperature independent plateau. The values of the internal friction plateau, however, are slightly below the universal ``glassy range'' where the internal frictions of almost all amorphous solids lie. Similar observations have been made in our earlier studies in the thin films of amorphous silicon and amorphous germanium, and t…
Investigation of electrical conduction in polysilicon nanowires (polySiNW) with nanograins (5 to 20nm), based on Monte Carlo (MC) simulations and electrical measurements from 4K to 300K are presented. Some irregular Coulomb Oscillations (CO) are observed at temperatures lower than 200K showing several period widths due to the random distribution in grain size (5-20nm). A remarkable result consists in more effective oscillations observed at intermediate range of temperatures (between 25K and 150K) and high drain voltages. The temperature dependence of COs is explained by the fact that in a mult…
Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon matrix which are the largest constituents of the films. Since the amorphous nature yields much larger light absorption coefficients as well as a generation source of photo-induced carriers with UV rays, these films can be potential candidates for deep-UV photodetector applications. From some previous studies p-type conduction of the films has been realized by d…
A theoretical analysis of inelastic electron tunneling spectroscopy (IETS) experiments conducted on molecular junctions are presented, where the second derivative of the current with respect to voltage is usually plotted as a function of applied bias. Within the nonperturbative computational scheme, adequate for arbitrary parameters of the model, we consider the virtual conduction process in the off-resonance region. Here we study the influence of few crucial factors on the IETS spectra: the strength of the vibronic coupling, the phonon energy, and the device working temperature. It was also s…
CdSe quantum dots (QDs) with different organic linker molecules are attached to ZnO nanowires (NWs) to study the luminescence dynamics and the electron tunneling from the QDs to the nanowires in time-resolved photoluminescence (PL) and photoconductivity measurements. The PL transients of the QD luminescence indicate two different recombination channels: the direct recombination inside the QD core and the recombination via QD surface defect states. After linking the QDs to the ZnO NW surface, photo-induced electron tunneling from an excited state of the QD into the conduction band of the nanowi…
In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-based TFET. Two structures are compared with conventional TFET, one, SiGe is located on the top of Si in the source and another one in reverse. Simulations approve these structures can reduce sub-threshold swing, OFF-current several times, and increase the ON-OFF ratio. Band diagram for conduction and valance bands are investigated and band to band tunneling (BTBT) generation rate is used to find better performance. W…
We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through the barrier leads to an electron spin polarization. The inverse effect, generation of a direct tunneling current by spin polarized electrons, is also predicted. We develop the microscopic theory of the effects and show that the spin polarization emerges due to the combined action of the Dresselhaus spin-orbit coupling within the barrier and the Rashba spin-o…
