硼掺杂对同轴电弧等离子体制备半导体超纳米金刚石/氢化非晶碳复合薄膜局域结构的影响：X射线吸收光谱研究
Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study
摘要：
利用同轴电弧等离子体技术制备的超纳米金刚石/氢化非晶碳复合薄膜具有金刚石颗粒嵌入非晶碳和氢化非晶碳基体中的显著结构特征。由于非晶性质产生更大的光吸收系数，以及与紫外线的光致载流子的产生源，这些薄膜可以是深紫外光电探测器应用的潜在候选人。从一些以前的研究中，p型导电的薄膜已实现通过掺杂硼在实验条件下。此外，他们的光学和电学特性进行了研究以前。然而，在很大程度上影响器件的物理性能的键合结构还没有被研究。本文对近边X射线吸收精细结构光谱进行了表征。结果表明，在掺硼初期，金刚石表面优先形成σ* C-B键态，导致结构畸变。进一步掺杂到膜中减少了不饱和键如π* C=-C的量，这可能是器件性能劣化的原因。我们的工作提出了一个基本的情况下模型的局部结构的薄膜上的硼掺杂的影响。
英文摘要：
Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon matrix which are the largest constituents of the films. Since the amorphous nature yields much larger light absorption coefficients as well as a generation source of photo-induced carriers with UV rays, these films can be potential candidates for deep-UV photodetector applications. From some previous studies p-type conduction of the films has been realized by doping boron in experimental conditions. In addition, their optical and electrical characteristics were investigated previously. However, the bonding structures which largely affect the physical properties of the devices have not been investigated. In this work, near-edge X-ray absorption fine structure spectroscopy characterizations are carried out. The result reveals that a bonding state σ* C-B of diamond surfaces is formed preferentially and structural distortion is caused at an early stage of boron-doping. Further doping into the films lessens the amount of unsaturated bonds such as π* C=-C, which may be a cause of the device performance degradations. Our work suggests a fundamental case model of boron-doping effects on a local structure of the film.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
