叉指结构金刚石场效应晶体管中超过50 mA的电流
Over 50 mA current in interdigitated diamond field effect transistor
AI总结：
本文报道一种叉指结构体金刚石结型场效应晶体管，通过增大总栅宽至14.7 mm并利用CVD均匀生长的大尺寸金刚石层，在450 K及光照下实现超过50 mA的电流，为体金刚石FET最高值，证明叉指结构可大幅提升器件导通性能。
摘要：
本通讯展示了目前报道的电流值最高的体金刚石场效应晶体管（FET）。目标是通过叉指结构和均匀生长特性增大总栅宽，从而大幅提高该类器件的电流。我们报告了通过制备和表征叉指结型场效应晶体管（JFET）获得的结果。该器件总栅宽为14.7 mm，具有24个并联指条，在VDS = -15 V、VGS = 0 V、450 K及光照条件下电流超过50 mA，这是体金刚石FET报道的最高值。其比导通电阻和阈值电压分别为608 mΩ·cm²和50 V。通过传输线方法（TLM）测量，我们提取出重硼掺杂（p++）金刚石层的电阻率为3.6 mΩ·cm，而2×10¹⁷ cm⁻³ p掺杂金刚石层在450 K下的电阻率为1.52 Ω·cm。我们测量了高温下漏极电流与栅极电压特性，表明此时起主导作用的已不再是导电沟道电阻，而是器件接入电阻。本研究表明，通过采用叉指结构并使用CVD生长的均匀大尺寸金刚石层，可以大幅改善FET的导通状态。
英文摘要：
This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to an interdigitated architecture and homogeneous growth properties. We report the results obtained by fabricating and characterizing an interdigitated junction FET (JFET). The device develops a total gate width of 14.7 mm, with 24 paralleled fingers and a current higher than 50 mA at VDS = -15 V, VGS = 0 V, at 450 K and under illumination which is the highest value reported for a bulk diamond FET. Its specific ON-resistance and threshold voltage are respectively 608 m$Ω$.cm${}^2$, 50 V. From Transfer length method (TLM) measurements we extract a resistivity of 3.6 m$Ω$.cm for a heavily boron-doped (p++)-diamond layer and 1.52 $Ω$.cm for a 2.1017 cm-3 p-doped diamond layer at 450 K. We measured the drain current versus gate voltage characteristics at high temperature showing that it is no longer the conduction channel resistance but the device access resistance that is predominant. This study indicates that it is possible to drastically improve the ON-state of FETs by using an interdigitated architecture, while using homogeneous large size diamond layers grown by CVD.
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