具有空间非均匀栅电容的TeraFET太赫兹探测器
TeraFET terahertz detectors with spatially non-uniform gate capacitances
摘要：
太赫兹场效应晶体管（TeraFET）沟道中的非均匀电容分布可以显著提高太赫兹探测性能。对于指数变化的电容与距离的流体动力学方程的解析解和模拟显示，130 nm Si TeraFET的响应度增加了约10%，与数值模拟非常一致。使用流体动力学方程的数值解，我们比较了三种不同的Cg配置（指数，线性和非线性）。仿真结果表明，该配置提供了最大的响应可调性。我们还比较了Si，III-V和p-金刚石TeraFET的非均匀电容分布的影响。结果证实了p-金刚石在太赫兹应用中的巨大潜力。改变跨沟道的阈值电压可以具有与改变栅极到沟道电容类似的效果。THz检测性能的改进背后的物理学与通过组成不对称的器件几何形状打破通道对称性有关。
英文摘要：
A non-uniform capacitance profile in the channel of a THz field-effect transistor (TeraFET) could significantly improve the THz detection performance. The analytical solutions and simulations of the hydrodynamic equations for the exponentially varying capacitance versus distance showed ~10% increase in the responsivity for the 130 nm Si TeraFETs in good agreement with numerical simulations. Using the numerical solutions of the hydrodynamic equations, we compared three different Cg configurations (exponential, linear and sawtooth). The simulations showed that the sawtooth configuration provides the largest response tunability. We also compared the effects of the non-uniform capacitance profiles for Si, III-V, and p-diamond TeraFETs. The results confirmed a great potential of p-diamond for THz applications. Varying the threshold voltage across the channel could have an effect similar to that of varying the gate-to-channel capacitance. The physics behind the demonstrated improvement in THz detection performance is related to breaking the channel symmetry by device geometry of composition asymmetry.
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