We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ~3 hours. By measuring the photoexcited Hall effect we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at ~1.9 eV. These findings shed new light on sub-bandgap states in nitrogen doped single-crystal diamond.
In hybrid lead halide perovskites, the coupling between photogenerated charges and the ionic degrees of freedom plays a crucial role in defining the intrinsic limit of carrier mobility and lifetime. However, direct investigation of this fundamental interaction remains challenging because its relevant dynamics occur on ultrashort spatial and ultrafast temporal scales. Here, we unveil the coupled electron-lattice dynamics of a CH3NH3PbI3 single crystal upon intense photoexcitation through a unique combination of ultrafast electron diffraction, time-resolved photoelectron spectroscopy, and time-d…
We study reflection of optically spin-oriented hot electrons as a means to probe the semiconductor crystal symmetry and its intimate relation with the spin-orbit coupling. The symmetry breaking by reflection manifests itself by tipping the net-spin vector of the photoexcited electrons out of the light propagation direction. The tipping angle and the pointing direction of the net-spin vector are set by the crystal-induced spin precession, momentum alignment and spin-momentum correlation of the initial photoexcited electron population. We examine non-magnetic semiconductor heterostructures and s…
Phase change alloys have seen widespread use from rewritable optical discs to the present day interest in their use in emerging neuromorphic computing architectures. In spite of this enormous commercial interest, the physics of carriers in these materials is still not fully understood. Here, we describe the time and space dependence of the coupling between photoexcited carriers and the lattice in both the amorphous and crystalline states of one phase change material, GeTe. We study this using a time-resolved optical technique called picosecond acoustic method to investigate the \textit{in situ…
Single-crystal diamond is a promising material for MEMs devices because of its low mechanical loss, compatibility with extreme environments, and built-in interface to high-quality spin centers. But its use has largely been limited by challenges in processing and growth. We demonstrate a wafer bonding-based technique to form diamond on insulator, from which we make single-crystal diamond micromechanical resonators with mechanical quality factors as high as 338,000 at room temperature. Variable temperature measurements down to 10 K reveal a nonmonotonic dependence of quality factor on temperatur…
We show the dielectrophoretic actuation of single-crystal diamond nanomechanical devices. Gradient radio-frequency electromagnetic forces are used to achieve actuation of both cantilever and doubly clamped beam structures, with operation frequencies ranging from a few MHz to ~50MHz. Frequency tuning and parametric actuation are also studied.
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
To understand the crystal structure of n-diamond, a hydrogen-doped (H-doped) diamond model has been investigated using first principles calculations. In particular, hydrogen concentration dependent elastic constants and lattice parameters for the H-doped diamond have been analyzed. Our results indicate that when the hydrogen concentration is less than 19 at.%, the H-doped diamond is mechanically stable. When the hydrogen concentration is about 4 at.%, the optimized lattice parameter, simulated XRD pattern and electronic properties for the H-doped diamond all agree well with the corresponding e…
Exposure to beams of low energy electrons (2 to 30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron beam induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800C) following exposure to low energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced …
With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors faces doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion-implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional boron doping in natural SCD without any phase transit…
The formation of single-crystal diamond membranes is an important prerequisite for the fabrication of high-quality optical cavities in this material. Diamond membranes fabricated using lift-off processes involving the creation of a damaged layer through ion implantation often suffer from residual ion damage, which severely limits their usefulness for photonic structures. The current work demonstrates that strategic etch removal of the most highly defective material yields thin, single-crystal diamond membranes with strong photoluminescence and a Raman signature approaching that of single-cryst…
Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and, electrochemical liftoff followed by homo-epitaxial overgrowth. Whispering gallery modes which spectrally overlap with the zero-phonon line (ZPL) of the SiV centers and exhibit quality factors ~2200 are measured. Lifetime reduction from 1.8 ns to 1.48 ns is observed from SiV centers in the cavity compared to those in the membrane outside the cavity. These results are pi…
We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick.
Individual, luminescent point defects in solids so called color centers are atomic-sized quantum systems enabling sensing and imaging with nanoscale spatial resolution. In this overview, we introduce nanoscale sensing based on individual nitrogen vacancy (NV) centers in diamond. We discuss two central challenges of the field: First, the creation of highly-coherent, shallow NV centers less than 10 nm below the surface of single-crystal diamond. Second, the fabrication of tip-like photonic nanostructures that enable efficient fluorescence collection and can be used for scanning probe imaging bas…
Despite decades of extensive research on mechanical properties of diamond, much remains to be understood in term of plastic deformation mechanisms due to the poor deformability at room temperature. In a recent work in Advanced Materials, it was claimed that room-temperature plasticity occurred in <001>-oriented single-crystal diamond nanopillars based on observation of unrecovered deformation inside scanning electron microscope. The plastic deformation was suggested to be mediated by a phase transition from sp3 carbon to an O8-carbon phase by molecular dynamics simulations. By comparison, our …
Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes formed and has significant impacts on MEMS (microelectromechanical systems), AFM (atomic force microscopy), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively-coupled plasma reactive ion etcher is presented, which allows to selectively reveal desired…
Single-crystal diamond plates with surfaces oriented in a (111) crystal plane are required for high-performance solid-state device platforms ranging from power electronics to quantum information processing architectures. However, producing plates with this orientation has proven challenging. In this paper, we demonstrate a method for reliably and precisely fabricating (111)-faced plates from commercially available, chemical-vapor-deposition-grown, type-IIa single-crystal diamond substrates with (100) faces. Our method uses a nanosecond-pulsed visible laser to nucleate and propagate a mechanica…
Thermodynamic properties of diamond are theoretically investigated on the ground of self-consistent description of a phonon gas in lattice, which generalizes the Debye model with taking into account the phonon-phonon interaction. It is shown that, at high temperatures, the theory predicts the linear in the temperature deviation of the isochoric heat capacity from the Dulong-Petit law. Unlike for the most crystals, where the decrease in the isochoric heat capacity is observed, our calculations for diamond predict the linear increase of the isochoric heat capacity with the temperature, viewed ex…
Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices empl…
The excellent material properties of diamond make it highly desirable for many extreme electronic applications that are out of reach of conventional electronic materials. For commercial diamond devices to become a reality, it is necessary to have an effective surface passivation since the passivation determines the ability of the device to withstand high surface electric fields. In this paper we present data from lateral Time-of-Flight studies on SiO2-passivated intrinsic single-crystalline CVD diamond. The SiO2 films were deposited using three different techniques. The influence of the passiv…
In this paper an overview of the application of opposed anvil-type high-pressure high-temperature apparatus for spontaneous growth of diamond crystals by solvent-catalyst technique is presented. The process makes use of a molten Mn47Ni53 catalyst to initiate the graphite-diamond transformation reaction. The pressure and temperature requirements to obtain reproducible spontaneous diamond crystallization were around 52.5-54 kbar and 1270-1320 C. The crystals had well-shaped cubo-structured morphology with the 100 and 111 faces and grain sizes of 0.2-0.5 mm. This work can stimulate future experim…
Single crystal, nanoscale diamond membranes are highly sought after for a variety of applications including nanophotonics, nanoelectronics and quantum information science. However, so far, the availability of conductive diamond membranes remained an unreachable goal. In this work we present a complete nanofabrication methodology for engineering high aspect ratio, electrically active single crystal diamond membranes. The membranes have large lateral directions, exceeding 500x500 um2 and are only several hundreds of nanometers thick. We further realize vertical single crystal p-n junctions, made…
Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on their extrinsic doping capability and on how it compares to those of diamond-like structures. This point is here investigated through numerical simulations conducted in the framework of the Density Functional Theory (DFT). The comparative analysis for group III and V dopant atoms shows that: i) in diamond-type crystals the bulk sites symmetry ($T_d$) is preserve…
Diamond-based photonic devices offer exceptional opportunity to study cavity QED at room temperature. Here we report fabrication and optical characterization of high quality photonic crystal (PC) microcavities based on nanocrystalline diamond. Fundamental modes near the emission wavelength of negatively charged nitrogen-vacancy (N-V) centers (637 nm) with quality factors (Qs) as high as 585 were observed. Three-dimensional Finite-Difference Time-Domain (FDTD) simulations were carried out and had excellent agreement with experimental results in the values of the mode frequencies. Polarization m…
Results of Small-Angle Scattering study of diamonds with various types of point and extended defects and different degrees of annealing are presented. It is shown that thermal annealing and/or mechanical deformation cause formation of nanosized planar and threedimensional defects giving rise to Small-Angle Scattering. The defects are often facetted by crystallographic planes 111, 100, 110, 311, 211 common for diamond. The scattering defects likely consist of clusters of intrinsic and impurity-related defects; boundaries of mechanical twins also contribute to the SAS signal. There is no clear c…
We demonstrate the fabrication of single-crystalline diamond nanopillars on a (111)-oriented chemical vapor deposited diamond substrate. This crystal orientation offers optimal coupling of nitrogen-vacancy (NV) center emission to the nanopillar mode and is thus advantageous over previous approaches. We characterize single native NV centers in these nanopillars and find one of the highest reported saturated fluorescence count rates in single crystalline diamond in excess of 10${}^6$ counts per second. We show that our nano-fabrication procedure conserves the preferential alignment as well as th…
Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard Chemical Mechanical Polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughness from 0.92 to 0.23 nm root mean square (RMS) and 0.31 to 0.09 nm RMS for {100} and {111} samples respectively was observed.
Materials adopting the diamond structure possess useful properties in atomic and colloidal systems, and are a popular target for synthesis in colloids where a photonic band gap is possible. The desirable photonic properties of the diamond structure pose an interesting opportunity for reconfigurable matter: can we create a colloidal crystal able to switch reversibly to and from the diamond structure? Drawing inspiration from high-pressure transitions of diamond-forming atomic systems, we design a system of polyhedrally-shaped particles that transitions from diamond to a tetragonal diamond deriv…
We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high quality single crystal diamond are most relevant, residual damage after the fabrication process represents a critical technological issue. The results of Raman and photoluminescence characterization indicat…
The phase diagram of model anisotropic particles with four attractive patches in a tetrahedral arrangement has been computed at two different values for the range of the potential, with the aim of investigating the conditions under which a diamond crystal can be formed. We find that the diamond phase is never stable for our longer-ranged potential. At low temperatures and pressures, the fluid freezes into a body-centred-cubic solid that can be viewed as two interpenetrating diamond lattices with a weak interaction between the two sublattices. Upon compression, an orientationally ordered face-c…
Detailed structural and electrical properties of ultra-nano-crystalline diamond (UNCD) films grown in H$_\text{2}$/CH$_\text{4}$/N$_\text{2}$ plasma were systematically studied as a function of deposition temperature ($T_d$) and nitrogen content ($\%$ N$_2$) to thoroughly evaluate their effects on conductivity. $T_d$ was scanned from 1000 to 1300 K for N$_2$ fixed at 0, 5, 10 and 20 $\%$. It was found that even the films grown in the synthetic gas mixture with no nitrogen could be made as conductive as 1$-$10$^{-2}$ $Ω$ cm with overall resistivity of all the films tuned over 4 orders of magnit…
In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macroscopic planarity and low roughness on a microscopic scale. Dislocations in high quality single crystal …
Fluoride crystals doped with rare-earth ions (REI) and pair centers in diamond for fast ($10^{-9}\rm{s}$) quantum computers (FQC) are proposed. As specific systems for REI doping, we propose $Ca_{1-x}Sr_{x}F_{2}$ crystals and their analogues. The $^{4}f$-states with different total orbital angular moments of these ions serve as two-level systems (qubits). Suitable REIs are proposed as well. It is established that the pair $SiV$ and $GeV$ centers in diamond are promising systems for fast optical quantum computers operating at elevated temperatures.
Single crystal diamond membranes that host optically active emitters are highly attractive components for integrated quantum nanophotonics. In this work we demonstrate bottom-up synthesis of single crystal diamond membranes containing the germanium vacancy (GeV) color centers. We employ a lift-off technique to generate the membranes and perform chemical vapour deposition in a presence of germanium oxide to realize the insitu doping. Finally, we show that these membranes are suitable for engineering of photonic resonators such as microring cavities with quality factors of 1500. The robust and s…
A combined experimental and numerical study on the variation of the elastic properties of defective single-crystal diamond is presented for the first time, by comparing nano-indentation measurements on MeV-ion-implanted samples with multi-scale modeling consisting of both ab initio atomistic calculations and meso-scale Finite Element Method (FEM) simulations. It is found that by locally introducing defects in the 2x10^18 - 5x10^21 cm-3 density range, a significant reduction of, as well as of density, can be induced in the diamond crystal structure without incurring in the graphitization of the…
We investigate bright fluorescence of nitrogen (NV)- and silicon-vacancy color centers in pyramidal, single crystal diamond tips which are commercially available as atomic force microscope probes. We coherently manipulate NV electronic spin ensembles with $T_2 = 7.7(3)\,μ$s. Color center lifetimes in different tip heights indicate effective refractive index effects and quenching. Using numerical simulations, we verify enhanced photon rates from emitters close to the pyramid apex; a situation promising for scanning probe sensing.
In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (< 1$μ$m) platforms, are highly relevant for nanoscale sensing. The presented top-down procedure includes electron beam lithography (EBL) as well as reactive ion etching (RIE). Our method introduces a novel type of inter-layer, namely silicon, that significantly enhances the adhesion of hydrogen silsesquioxane (HSQ) electron beam resist to SCD and avoids sample charging during EBL. In contrast to previously us…
Powered by the mutual developments in instrumentation, materials andtheoretical descriptions, sensing and imaging capabilities of quantum emitters insolids have significantly increased in the past two decades. Quantum emitters insolids, whose properties resemble those of atoms and ions, provide alternative waysto probing natural and artificial nanoscopic systems with minimum disturbance andultimate spatial resolution. Among those emerging quantum emitters, the nitrogen-vacancy (NV) color center in diamond is an outstanding example due to its intrinsicproperties at room temperature (highly-lumi…
Wavefront-preserving x-ray diamond crystal optics are essential for numerous applications in x-ray science. Perfect crystals with flat Bragg planes are a prerequisite for wavefront preservation in Bragg diffraction. However, this condition is difficult to realize in practice because of inevitable crystal imperfections. Here we use x-ray rocking curve imaging to study the smallest achievable Bragg-plane slope errors in the best presently available synthetic diamond crystals and how they compare with those of perfect silicon crystals. We show that the smallest specific slope errors in the best d…
Although theoretical investigations indicate that the successful combination of graphene and diamond would give interesting properties, only a limited number of reports dealing with the subject have been published. Here, we present a rapid thermal process (RTP) which involves Ni as metal catalyst for a direct growth of graphene on diamond at a temperature of 800 $^{\circ}$C for 1 min. This process operates with a combination of a lower temperature and for a shorter duration than what has previously been reported. Thin Ni films with different thicknesses were deposited on top of (100) single cr…
Diamond is a material of choice in the pursuit of integrated quantum photonic technologies. So far, the majority of photonic devices fabricated from diamond, are made from (100)-oriented crystals. In this work, we demonstrate a methodology for the fabrication of optically-active membranes from (111)-oriented diamond. We use a liftoff technique to generate membranes, followed by chemical vapour deposition of diamond in the presence of silicon to generate homogenous silicon vacancy colour centers with emission properties that are superior to those in (100)-oriented diamond. We further use the di…
Absolute X-ray reflectivity of chemically vapor deposited (CVD) diamond single crystals was measured in the Laue geometry in the double-crystal non-dispersive setting with an asymmetric Si beam conditioner crystal. The measurements were supplemented by rocking curve topography. The measured reflectivity curves are examined in the framework of Darwin-Hamilton approach using a set of two independent parameters, the characteristic thickness of mosaic blocks and their average angular misorientation. Due to strong extinction effects the width of reflectivity curves does not directly represent the a…
Homoepitaxial chemical vapour deposition (CVD) on high pressure high temperature (HPHT) synthetic diamond substrates allows production of diamond material with controlled point defect content. In order to minimize the extended defect content, however, it is necessary to minimize the number of substrate extended defects that reach the initial growth surface and the nucleation of dislocations at the interface between the CVD layer and its substrate. X-ray topography has indicated that when type IIa HPHT synthetic substrates are used the density of dislocations nucleating at the interface can be …
The resolution function of a spectrometer based on a strongly bent single crystal (bending radius of 10 cm or less) is evaluated. It is shown that the resolution is controlled by two parameters, (i) the ratio of the lattice spacing of the chosen reflection to the crystal thickness and (ii) a single parameter comprising crystal thickness, its bending radius, and anisotropic elastic constants of the chosen crystal. Diamond, due to its unique elastic properties, can provide notably higher resolution than silicon. The results allow to optimize the parameters of bent crystal spectrometers for the h…
The ultra-wide bandgap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are inactive at room temperature. Here, we present the effect of deep defects on the mechanical energy dissipation of single-crystal diamond experimentally and theoretically up to 973 K. Energy dissipation is found to increase with temperature and exhibits local maxima due to the interaction between phonons and deep defects activated at specific temperatures. A two-level model with deep energies is proposed to well explain the energy dissipation at elevated tempe…
We report fabrication and results of high-resolution X-ray topography characterization of diamond single crystal plates with a large surface area (10$\times$10 mm$^2$) and (111) crystal surface orientation for applications in high-heat-load X-ray crystal optics. The plates were fabricated by laser cutting of the (111) facets of diamond crystals grown using high-pressure high-temperature method. The intrinsic crystal quality of a selected 3$\times$7~mm$^2$ crystal region of one of the studied samples was found to be suitable for applications in wavefront-preserving high-heat-load crystal optics…
Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we present an approach to conveniently fabricate such thin membranes with up to about one millimeter in size. We use commercially available diamond plates (thickness 50 $μ$m) in an inductively coupled reactive ion etching process which is based on argon, oxygen and SF$_6$. We thus avoid using toxic, corrosive feed gases and add an alternative to previously presente…
We demonstrate the fabrication of photonic crystal nanobeam cavities with rectangular cross section into bulk diamond. In simulation, these cavities have an unloaded quality factor (Q) of over 1 million. Measured cavity resonances show fundamental modes with spectrometer-limited quality factors larger than 14,000 within 1nm of the NV center's zero phonon line at 637nm. We find high cavity yield across the full diamond chip with deterministic resonance trends across the fabricated parameter sweeps.
Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower w…
We report ultrafast surface pump and interface probe experiments on photoexcited carrier transport across single crystal bismuth films on sapphire. The film thickness is sufficient to separate carrier dynamics from lattice heating and strain, allowing us to investigate the time-scales of momentum relaxation, heat transfer to the lattice and electron-hole recombination. The measured electron-hole ($e-h$) recombination time is 12--26 ps and ambipolar diffusivity is 18--40 cm$^{2}$/s for carrier excitation up to $\sim 10^{19} \text{cm}^{-3}$. By comparing the heating of the front and back sides o…
Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still remain in processing diamond and in the fabrication of thin diamond membranes, which are necessary for planar photonic device engineering. Here we demonstrate epitaxial growth of single crystal diamond…
In this work a strategy to grow diamond on $β$-Ga$_2$O$_3$ has been presented. The $ζ$-potential of the $β$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of gallium could be seen on the surface. To overcome the problem $\sim$100 nm of SiO$_2$ and Al$_2$O$_3$ were deposited using atomic layer deposition. The nanodiamond seeded SiO$_2$ layer was effective in prot…
Color centers in diamond as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently discovered chromium related centers are particularly attractive since they possess narrow bandwidth emission and a very short lifetime. In this paper we investigate the fabrication methodologies to engineer these centers in monolithic diamond. We show that the emitters can be successfully fabricated by ion implantation of chromium in conjunction with oxygen or sulfur. Furthermore, our results indicate that the background …
With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphiti…
Silicon Driven Facet Regulation Enables Tunable Micro-Diamond Architectures in Liquid Ga In
University of Aveiro（阿威罗大学）；Intelligent Systems Associate Laboratory (LASI)（智能系统联合实验室）；Instituto de Engenharia de Sistemas e Computadores - Microssistemas e Nanotecnologia（系统工程与计算机研究所-微系统与纳米技术）；IPFN, Instituto Superior Técnico, University of Lisbon（里斯本理工大学高级理工学院核物理研究组）；DECN, Instituto Superior Técnico, University of Lisbon（里斯本理工大学高级理工学院能源转换中心）
