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arXiv 1402.1883cond-mat.mes-hallcond-mat.mtrl-sci
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单晶金刚石的热扩散掺杂

Thermal Diffusion Doping of Single Crystal Diamond

Jung-Hun Seo, Solomon Mikael, Hongyi Mi, Giri Venkataramanan, James P. Blanchard, Weidong Zhou, Shaoqin Gong, Zhenqiang Ma

摘要:

单晶金刚石(SCD)具有最佳的整体电子和热性能,是一种极宽带隙材料,有望在未来彻底改变电力电子和射频电子。然而,将SCD转化为有用的半导体面临着掺杂挑战,因为传统的替代掺杂技术,如热扩散和离子注入,不容易适用于SCD。在这里,我们报告了一个简单和容易获得的掺杂策略表明,电激活,取代硼掺杂在自然SCD没有任何相变或晶格损伤,可以很容易地实现与热扩散在相对较低的温度。对于硼掺杂,我们采用了一种独特的掺杂剂携带介质:重掺杂硅纳米膜。我们进一步展示了选择性掺杂的高压二极管和半波整流器电路使用这样的掺杂SCD。我们的新掺杂策略为未来的高压功率转换系统和其他新型金刚石电子产品使用SCD建立了一条可达的道路。

英文摘要:

With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors faces doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion-implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional boron doping in natural SCD without any phase transitions or lattice damage which can be readily realized with thermal diffusion at relatively low temperature. For the boron doping, we employ a unique dopant carrying medium: heavily doped Si nanomembranes. We further demonstrate selectively doped high-voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high-voltage power conversion systems and for other novel diamond-based electronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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