Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
A. W. Rushforth, E. De Ranieri, J. Zemen, J. Wunderlich, K. W. Edmonds, C. S. King, E. Ahmad, R. P. Campion, C. T. Foxon, B. L. Gallagher, K. Vyborny, J. Kucera, T. Jungwirth
备注：
Submitted to Physical Review Letters. Updates version 1 to include a more detailed discussion of the effect of strain on the anisotropic magnetoresistance
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.
The magnetocrystalline anisotropy energies (MAEs) of the ferromagnetic metals bcc Fe, fcc and hcp Co, and fcc Ni have been calculated by using the {\it ab initio} tight-binding method. Disentangling the strong correlation among the $d$ orbitals with the Hamiltonian in the local spin-density approximation, we have investigated the orbital polarizations induced by the Hubbard $U$ and Racah $B$. The experimental MAE of fcc Ni is found with the value of $U$ close to that determined from experiments and used in other theories. With the optimized values of $U$ and $J$, both the MAEs and the orbital …
We present a thorough study on the magnetoanisotropic properties and magnetocaloric effect in the layered ferromagnetic Cr$_4$Te$_5$ single crystals by performing the critical behaviour analysis of magnetization isotherms. The critical exponents $β$=0.485(3), $γ$=1.202(5), and $δ$=3.52(3) with a Curie temperature of $T_C \approx 340.73(4)$ K are determined by the modified Arrott plots. We observe a large magnetocrystalline anisotropy K$_u$=330 kJ/$m^3$ at 3 K which gradually decreases with increasing temperature. Maximum entropy change -$ΔS_{M}^{max}$ and the relative cooling power (RCP) are f…
Inspired by the successful synthesis of two-dimensional (2D) V-based Janus dichloride monolayers with intrinsic ferromagnetism and high Curie temperature (T$_{c}$), the electronic structure, spin-valley splitting and magnetic anisotropy of Janus 2H-VSeS monolayers are investigated in detailed using first-principles calculations. The results show that the Janus 2H-VSeS monolayer exhibits a large valley splitting of 105meV, high T$_{c}$ of 278K and good magnetocrystalline anisotropy (0.31meV) contributed by the in-plane d$_{x^{2}-y^{2}}$/d$_{xy}$ orbitals of V atoms. The biaxial strain ($-$8%<$\…
The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic properties of $\mathrm{VSi_2P_4}$, and it spans a wide range of properties upon the increasing strain from ferromagnetic metal (FMM) to SGS to ferromagnetic semiconductor (FMS) to SGS to ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS $\mathrm{VSi_2P_4}$ with stra…
For two-dimensional (2D) material, piezoelectric ferromagnetism (PFM) with large out-of-plane piezoresponse is highly desirable for multifunctional ultrathin piezoelectric device application. Here, we predict that Janus monolayer CrSCl is an out-of-plane ferromagnetic (FM) semiconductor with large vertical piezoelectric response and high Curie temperature. The predicted out-of-plane piezoelectric strain coefficient $d_{31}$ is -1.58 pm/V, which is higher than ones of most 2D materials (compare absolute values of $d_{31}$). The large out-of-plane piezoelectricity is robust against electronic co…
The combination of piezoelectricity and ferromagnetic (FM) order in a two-dimensional (2D) material, namely 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for novel device applications. Here, we predict an in-plane FM semiconductor Janus monolayer NiClI with considerably large magnetic anisotropy energy (MAE) of 1.439 meV, exhibiting dynamic, mechanical and thermal stabilities. The NiClI monolayer possesses larger in-plane piezoelectricity ($d_{11}$$=$5.21 pm/V) comparable to that of $\mathrm{MoS_2}$. Furthermore, NiClI has huge out-of-plane piezoelectricity ($d…
Microstripline ferromagnetic resonance technique has been used to study the indirect magnetoelectric coupling occurring in an artificial magnetoelectric heterostructure consisting of a magnetostrictive thin film cemented onto a piezoelectric actuator. Two different modes (sweep-field and sweep-frequency modes) of this technique have been employed to quantitatively probe the indirect magnetoelectric coupling and to observe a voltage induced magnetization rotation (of 90 degree). This latter has been validated by the experimental frequency variation of the uniform mode and by the amplitude of th…
Frequency dependence of magnetoelectric (ME) coupling is investigated in trilayers of ferromagnetic alloy and piezoelectric lead zirconate titanate (PZT). The ferromagnetic phases studied include permendur, a soft magnet with high magnetostriction, iron, nickel, and cobalt. Low frequency data on ME voltage coefficient versus bias magnetic field indicate strong coupling only for trilayers with permendure or Ni. Measurements of frequency dependence of ME voltage reveal a giant ME coupling at electromechanical resonance. The ME interactions for transverse fields is an order of magnitude stronger …
We discuss a model that considers the bulk composite as a homogeneous medium with piezoelectric and magnetostrictive subsystems. We solve combined elastostatic, electrostatic and magnetostatic equations to obtain effective composite parameters (piezoelectric modules, magnetostriction factors, compliances, magnetoelectric coefficients) for 3-0 and 0-3 connectivities. Expressions for longitudinal and transverse low-frequency magnetoelectric voltage coefficients have been obtained for unclamped and clamped samples. Volume fractions for peak low-frequency effective magnetoelectric voltage coeffici…
In this study, the microscopic origins of the voltage-controlled magnetic anisotropy (VCMA) in 3d-ferromagnetic metals are revealed. Using in-situ X-ray fluorescence spectroscopy that provides a high quantum efficiency, electric-field-induced changes in orbital magnetic moment and magnetic dipole Tz terms in ultrathin Co films are demonstrated. An orbital magnetic moment difference of 0.013μB. was generated in the presence of electric fields of +(-)0.2 V/nm. The VCMA of Co was properly estimated by the induced change in orbital magnetic moment, according to the perturbation theory model. The i…
Magnetoelectric (ME) interactions in layered structures of magnetostrictive and piezoelectric phases are mediated by mechanical deformation. Here we discuss the frequency dependence of ME coupling in bilayers and trilayers of Permendur, a ferromagnetic alloy, and lead zirconate titanate. Data on ME voltage coefficient versus frequency profiles reveal a giant ME coupling at electromechanical resonance. The maximum voltage coefficient of 90 V/cm Oe is three orders of magnitude higher than low-frequency values. The ME interactions for transverse fields is an order of magnitude stronger than for l…
We investigate theoretically the magnetic dynamics in a ferroelectric/ferromagnetic heterostructure coupled via strain-mediated magnetoelectric interaction. We predict an electric field-induced magnetic switching in the plane perpendicular to the magneto-crystalline easy axis, and trace this effect back to the piezoelectric control of the magnetoelastic coupling. We also investigate the magnetic remanence and the electric coercivity.
Layered ferromagnetic-piezoelectric composites show mechanical strain mediated electromagnetic coupling. Here we discuss dielectric and piezoelectric properties of ferrite-lead zirconate titanate (PZT) and lanthanum manganite-PZT samples. Results of our investigations on dielectric and pyroelectric properties of multilayer ferromagnetic-piezoelectric are presented here. Lead zircinate-titanate PbZrxTi1-xO3 (PZT) was used for the piezoelectric phase in all the structures. The following materials were used for the ferromagnetic component: nickel-zinc ferrites Ni0.9Zn 0.1Fe2O4 (NFO1) and Ni0.8Zn0…
We demonstrate strain-tuning of magnetocrystalline anisotropy over a range of more than one thousand Gauss in epitaxial Y3Fe5O12 films of excellent crystalline quality grown on lattice-mismatched Y3Al5O12 substrates. Ferromagnetic resonance (FMR) measurements reveal a linear dependence of both out-of-plane and in-plane uniaxial anisotropy on the strain-induced tetragonal distortion of Y3Fe5O12. Importantly, we find the spin mixing conductance G_r determined from inverse spin Hall effect and FMR linewidth broadening remains large: G_r = 3.33 x 10^14 Ohm^-1m^-2 in Pt/Y3Fe5O12/Y3Al5O12 heterostru…
We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular- and the temperature-dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane u…
The cubic lattice symmetry of ferromagnetic homogeneously disordered alloys is when a compositional modulation is imposed. This can have a profound influence on the magnetocrystalline anisotropy energy (MAE). We describe our ab-initio theory of this effect and use the framework of concentration waves with the electronic structure described within the spin-polarised relativistic Korringa-Kohn-Rostoker coherent-potential approximation. We find that ordering produces a 2 order of magnitude increase in the MAE as well as altering the equilibrium direction of magnetisation. Using the same theoretic…
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculations. The analysis shows that the MTJs with Co-based alloys (CoNi, CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs have energetically favored Co-O interfaces where interfacial antibonding…
This paper reports the development of a methodology combining microstrip ferromagnetic resonance (MS-FMR) and digital image correlation (DIC) in order to silmuteanously measure the voltage-induced strains and the magnetic resonance in artificial magnetoelectric heterostructures (magnetic films/piezoelectric substrate? or magnetic films/flexible substrate/piezoelectric actuator ?). The overall principle of the technique and the related analytical modelling are described. It is powerful to estimate the magnetostriction coefficient of ferromagnetic thin films and can be used to determine the effe…
Single-layer pentagonal materials are an emerging family of two-dimensional (2D) materials that could exhibit novel properties due to the building blocks being pentagons instead of hexagons as in numerous 2D materials. Based on our recently predicted single-layer pentagonal CoS$_2$ that is an antiferromagnetic (AFM) semiconductor, we replace two S atoms by As atoms in a unit cell to form single-layer pentagonal CoAsS. The resulting single-layer material is dynamically stable ac-cording to the phonon calculations. We find two drastic changes in the properties of single-layer pentagonal CoAsS in…
Using a first-principles fully relativistic scheme based on ultrasoft pseudopotentials and density functional perturbation theory, we study the magnetocrystalline anisotropy free energy of the ferromagnetic binary compound MnBi. We find that differences in the phonon dispersions due to the different orientations of the magnetization (in-plane and perpendicular to the plane) give a difference between the vibrational free energies of the high-temperature and low-temperature phases. This vibrational contribution to the magnetocrystalline anisotropy energy (MAE) constant, $K_u$, is non-negligible.…
We present an investigation of the magnetic behavior of epitaxial MnAs films grown on GaAs(100). We address the dependence of the magnetic moment, ferromagnetic transition temperature ($T_c$) and magnetocrystalline anisotropy constants on epitaxial conditions. From thorough structural and magnetic investigations, our findings indicate a more complex relationship between strain and magnetic properties in MnAs films than a simple stretch/compression of the unit cell axes. While a small increase is seen in the anisotropy constants the enhancement of the magnetic moment at saturation is significan…
Magnetoelectric coupling terms are derived in piezoelectric/magnetostrictive (multiferroic) thin film heterostructures using Landau-Ginzburg free energy expansions in terms of strain and by considering strain boundary conditions between the two materials. Then, a general effective medium method for solving for the complete electromagnetic susceptibility tensor of such heterostructures is used to calculate the ferromagnetic resonance frequency in a BaTiO$_3$/NiFe$_2$O$_4$ superlattice. This method differs from existing methods for treating magnetoelectric heterostructures since the magnetic and…
We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magn…
Rh-terminated FeRh(001) film is known to be stable in a ferromagnetic (FM) state different from a G-type antiferromagnetic (G-AFM) bulk ground state, while an Fe-terminated FeRh(001) film has the same ground state as the bulk. In this paper, we investigate the magnetic properties of asymmetrically terminated FeRh(001) films: one surface is Fe-terminated and the other is Rh-terminated. Rh surface only ] (RhSO) FM state in asymmetrically terminated FeRh(001) film is identified to exhibit 40% increased perpendicular MCA energy as compare to that of the whole-layer (WL) FM state. This increased MC…
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patte…
Strain effects in [001] textured Co80Ir20 thin films with negative magnetocrystalline anisotropy
Instituto de Nanociencia y Nanotecnología Nodo Bariloche (CNEA - CONICET)（巴里洛切纳米科学技术研究所）；Instituto Balseiro (UNCuyo - CNEA)（巴尔塞罗研究所）；Departamento de Magnetismo y Materiales Magnéticos (CNEA)（磁性及磁性材料系）；Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学技术研究所）
The magnetic properties of Fe$_2$Ta and Fe$_2$W in the hexagonal Laves phase are computed using density functional theory in the generalised gradient approximation, with the full potential linearised augmented plane wave method. The alloy Fe$_2$Ta$_{1-x}$W$_x$ is studied using the virtual crystal approximation to treat disorder. Fe$_2$Ta is found to be ferromagnetic with a saturation magnetization of $μ_0 M_\text{s} = 0.66~\mathrm{T}$ while, in contrast to earlier computational work, Fe$_2$W is found to be ferrimagnetic with $μ_0 M_\text{s} = 0.35~\mathrm{T}$. The transition from the ferri- to…
The observation of strong magnetoelectric effects is reported in thick film bilayers and multilayers of ferrite-lead titanate zirconate (PZT) and lanthanum nanganite-PZT. The ferrites used in our studies included pure and zinc substituted cobalt-, nickel- and lithium ferrites. Samples were prepared by sintering 10-40 mm thick films obtained by tape-casting. Measurements of ME voltage coefficients at 10-1000 Hz indicated a giant ME effect in nickel ferrite-PZT, but a relatively weak coupling in other ferrite-PZT and manganite-PZT systems. Multilayers prepared by hot pressing was found to show a…
We report the piezoresisitivity in magnetic thin films of FeGa and their use for fabricating self transducing microcantilevers. The actuation occurs as a consequence of both the ferromagnetic and magnetostrictive property of FeGa thin films, while the deflection readout is achieved by exploiting the piezoresisitivity of these films. This self-sensing, self-actuating micromechanical system involves a very simple bilayer structure, which eliminates the need for the more complex piezoelectric stack that is commonly used in active cantilevers. Thus, it potentially opens opportunities for remotely …
In this work, we present a detailed theoretical investigation of the electronic and magnetic properties of ferromagnetic slabs and clusters deposited on SrTiO$\_3$ via first-principles, with a particular emphasis on the magneto-crystalline anisotropy (MCA). We found that in the case of Fe films deposited on SrTiO$\_3$ the effect of the interface is to quench the MCA whereas for Cobalt we observe a change of sign of the MCA from in-plane to out-of-plane as compared to the free surface. We also find a strong enhancement of MCA for small clusters upon deposition on a SrTiO$\_3$ substrate. The hyb…
A partial substitution of Sm by Ce can have drastic effects on the magnetic performance, because it will introduce strain in the structure and breaks the lattice symmetry in a way that enhances the contribution of the Co atoms to magnetocrystalline anisotropy. However, Ce substitutions, which are benefit to improve the magnetocrystalline anisotropy, are detrimental to enhance the Curie temperature (TC). With the requirements of wide operating temperature range of magnetic devices, it is important to quantitatively explore the relationship between the TC and ferromagnetic exchange energy. In th…
Magnetocrystalline anisotropy is a fundamental property of magnetic materials that determines the dynamics of magnetic precession, the frequency of spin waves, the thermal stability of magnetic domains, and the efficiency of spintronic devices. We combine torque magnetometry and density functional theory calculations to determine the magnetocrystalline anisotropy of the metallic antiferromagnet Fe$_2$As. Fe$_2$As has a tetragonal crystal structure with the Néel vector lying in the (001) plane. We report that the four-fold magnetocrystalline anisotropy in the (001)-plane of Fe$_2$As is extremel…
Electrical spin injection from ferromagnetic $δ$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $δ$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.
Strained epitaxial growth provides the opportunity to understand the dependence of intrinsic and extrinsic properties of functional materials at frozen intermediate stages of a phase transformation. In this study, a combination of thin film experiments and first-principles calculations yields the binding energy and magnetic properties of tetragonal Fe70Pd30-xCux ferromagnetic shape memory thin films with x = 0, 3, 7 and structures ranging from bcc to beyond fcc (1.07<c/a_bct<1.57). We find that Cu enhances the quality of epitaxial growth, while spontaneous polarisation and Curie temperature ar…
The antiferromagnetic (AFM) to ferromagnetic (FM) first order phase transition of an epitaxial FeRh thin-film has been studied with x-ray magnetic circular dichroism using photoemission electron microscopy. The FM phase is magnetized in-plane due to shape anisotropy, but the magnetocrystalline anisotropy is negligible and there is no preferred in-plane magnetization direction. When heating through the AFM to FM phase transition the nucleation of the FM phase occurs at many independent nucleation sites with random domain orientation. The domains subsequently align to form the final FM domain st…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an elec…
We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie temperatures, where direct electric gating is not possible. We demonstrate very large and reversible rotations of the magnetic easy axis. We compare the results obtained from magneto-transport and SQUID magnetometry measurements, extracting the dependence of the piezo-induced uniaxial magnetic anisotropy constant upon strain in both cases and detailing the limitat…
An improved method for characterizing the magnetic anisotropy of films with cubic symmetry is described and is applied to an yttrium iron garnet (111) film. Analysis of the FMR spectra performed both in-plane and out-of-plane from 0.7 to 8 GHz yielded the magnetic anisotropy constants as well as the saturation magnetization. The field at which FMR is observed turns out to be quite sensitive to anisotropy constants (by more than a factor ten) in the low frequency (< 2 GHz) regime and when the orientation of the magnetic field is nearly normal to the sample plane; the restoring force on the magn…
We report results of micro-Brillouin-Mandelstam light scattering spectroscopy of thermal magnons in the two-phase synthetic multiferroic structure consisting of a piezoelectric (PMN-PT) substrate and a Ni thin film with the thickness of 64 nm. The experimental data reveal the first two modes of the perpendicular standing spin waves (PSSW) spatially confined across the Ni thin film. A theoretical analysis of the frequency dependence of the PSSW peaks on the external magnetic field reveals the asymmetric boundary condition, i.e. pinning, for variable magnetization at different surfaces of the Ni…
Coexistence of intrinsic ferromagnetism and piezoelectricity, namely piezoelectric ferromagnetism (PFM), is crucial to advance multifunctional spintronic technologies. In this work, we demonstrate that Janus monolayer YBrI is a PFM, which is dynamically, mechanically and thermally stable. Electronic correlation effects on physical properties of YBrI are investigated by using generalized gradient approximation plus $U$ (GGA+$U$) approach. For out-of-plane magnetic anisotropy, YBrI is a ferrovalley (FV) material, and the valley splitting is larger than 82 meV in considered $U$ range. The anomalo…
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on orientation of the magnetic moment. Based on ab initio relativistic calculations of the anisotropy in the density of states we predict sizable TAMR effects in room-temperature metallic ferromagnets. This opens prospect for new spintronic devices with a simpler geometry as these do not require antiferromagnetically coupled contacts on either side of the tunn…
In this work, high throughput DFT calculations are performed on the alkali metal-based half Heusler alloys; LiY$_p$Y$^\prime_{1-p}$S (Y, Y$^\prime$ = V, Cr, Mn, Fe, Co, Ni and $\mathit{p}$ = 0, 0.25, 0.5, 0.75, 1). Starting with 243 structural replica, systematic filters are designed to select the energetically and vibrationally favorable compositions by considering the contributions stemming from the magnetic alignments of the ions. Thereby, 26 dynamically stable magnetic compositions are identified, of which 10 are found to be ferromagnetic (FM), 4 antiferromagnetic (AFM) and 12 ferrimagneti…
Using the full potential linearized augmented plane wave (FLAPW) method, we have explored the magnetic properties of one dimensional (1D) Ti atomic chain. Astonishingly, we for the first time observed that the 1D Ti atomic chain has ferromagnetic ground state even on NiAl(110) surface although the Ti has no magnetic moment in bulk or macroscopic state. It was found that the physical property of direct exchange interaction among Ti atoms occurred in free standing state is well preserved on NiAl(110) surface and this feature has an essential role in ferromagnetism of 1D Ti atomic chain. It was s…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adjacent piezoelectric layer, the relative amount of antiferromagnetic and ferromagnetic regions can be tuned by an electric field applied to the piezoelectric material. Indeed, large variations in the s…
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demon…
We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional calculations evidence an attraction of Mn_Ga impurities to the stacking faults. We argue that the enhanced Mn density along the common [1-10] direction of the stacking fault planes produces sufficientl…
The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of magnetization orientation at room temperature. The samples consist of polycrystalline nickel thin films evaporated onto piezoelectric actuators. The magnetic properties of these multifunctional hybrids are investigated at room temperature as a function of the voltage controlled stress exerted by the actuator on the Ni film. Ferromagnetic resonance spectroscopy s…
The electronic structure, magnetic properties and phase formation of hexagonal ferromagnetic Fe$_{3}$Sn-based alloys have been studied from first principles and by experiment. The pristine Fe$_{3}$Sn compound is known to fulfill all the requirements for a good permanent magnet, except for the magnetocrystalline anisotropy energy (MAE). The latter is large, but planar, i.e. the easy magnetization axis is not along the hexagonal c direction, whereas a good permanent magnet requires the MAE to be uniaxial. Here we consider Fe$_{3}$Sn$_{0.75}$M$_{0.25}$, where M= Si, P, Ga, Ge, As, Se, In, Sb, Te …
We present results of a density functional theory study of MnO in the wurtzite structure. Our motivation is provided by recent experiments reporting ferromagnetism in Mn-doped wurtzite structure ZnO. We find that wurtzite MnO a) is not strongly energetically disfavored as compared with the ground state rocksalt MnO, b) shows strong magnetostructural coupling and c) has a piezoelectric response that is larger than that of ZnO. These predictions augur well for the creation of ferromagnetic piezoelectric semiconductor based on Mn-doped ZnO.
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the mag…
