We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional calculations evidence an attraction of Mn_Ga impurities to the stacking faults. We argue that the enhanced Mn density along the common [1-10] direction of the stacking fault planes produces sufficiently strong [110]/[1-10] symmetry breaking mechanism to account for the in-plane uniaxial magnetocrystalline anisotropy of these ferromagnetic semiconductors.
Starting from a semi-empirical potential designed for Cu, we developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. These potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (fcc) materials. The results indicate that properties such as yield strength and microstructu…
In terms of the fully relativistic screened Korringa-Kohn-Rostoker method we investigate the effect of stacking faults on the magnetic properties of hexagonal close-packed cobalt. In particular, we consider the formation energy and the effect on the magnetocrystalline anisotropy energy (MAE) of four different stacking faults in hcp cobalt -- an intrinsic growth fault, an intrinsic deformation fault, an extrinsic fault and a twin-like fault. We find that the intrinsic growth fault has the lowest formation energy, in good agreement with previous first-principles calculations. With the exception …
The intrinsic stacking-fault energies and free energies for Ag, Cu, and Ni are derived from molecular-dynamics simulations using the empirical tight-binding potentials of Cleri and Rosato [Phys. Rev. B 48, 22 (1993)]. While the results show significant deviations from experimental data, the general trend between the elements remains correct. This allows to use the potentials for qualitative comparisons between metals with high and low stacking-fault energies. Moreover, the effect of stacking faults on the local vibrational properties near the fault is examined. It turns out that the stacking f…
We investigated stability and the electronic structure of extended defects including anti-site domain boundaries and stacking faults in the kesterite-structured semiconductors, Cu$_2$ZnSnS$_4$ (CZTS) and Cu$_2$ZnSnSe$_4$ (CZTSe). Our hybrid density functional theory calculations show that stacking faults in CZTS and CZTSe induce a higher conduction band edge than the bulk counterparts, and thus the stacking faults act as electron barriers. Antisite domain boundaries, however, accumulate electrons as the conduction band edge is reduced in energy, having an opposite role. An Ising model was cons…
There is growing interest in promoting deformation twinning for plasticity in advanced materials, as highly organized twin boundaries are beneficial to better strength-ductility combination in contrast to disordered grain boundaries. Twinning deformation typically involves the kinetics of stacking faults, its interaction with dislocations, and dislocation - twin boundary interactions. While the latter has been intensively investigated, the dynamics of stacking faults has been less known. In this work, we report several new insights on the stacking fault behavior in twin induced plasticity from…
The generalized stacking fault energy is a key ingredient to mesoscale models of dislocations. Here we develop an approach to quantify the dependence of generalized stacking fault energies on the degree of chemical disorder in multicomponent alloys. We introduce the notion of a "configurationally-resolved planar fault" (CRPF) energy and extend the cluster expansion method from alloy theory to express the CRPF as a function of chemical occupation variables of sites surrounding the fault. We apply the approach to explore the composition and temperature dependence of the unstable stacking fault e…
We use first-principles calculations based on density functional theory to determine and understand the driving force of the observed stacking fault expansion in SiC. We verify the suggestion based on recent experiments that the free energy difference between the faulted and the perfect structures is responsible for this expansion, and show that its origin lies in a large entropy associated with soft vibrational modes of the faulted SiC structure. These soft modes involve shearing of SiC on a long length-scale and are absent in related group IV semiconductors, such as Si, Ge and C.
We present results of self-consistent, full-potential electronic structure calculations for slabs of hexagonal graphite with stacking faults and for slabs with one displaced surface layer. There are two types of stacking faults, which differ qualitatively in their chemical bonding picture. We find, that both types induce localized interface bands near the symmetry line K-M in the Brillouin zone and a related peak in the local density of states (LDOS) very close to the Fermi energy, which should give rise to a dominating contribution of the interface bands to the local conductivity at the stack…
Careful first-principles density functional calculations reveal the importance of hexagonal versus cubic stacking of closed packed planes of Pd as far as local magnetic properties are concerned. We find that, contrary to the stable face centered cubic phase, which is paramagnetic, the hexagonal close-packed phase of Pd is ferromagnetic with a magnetic moment of 0.35 $μ_{B}$/atom. Our results show that two-dimensional defects with local hcp stacking, like twin boundaries and stacking faults, in the otherwise fcc Pd structure, increase the magnetic susceptibility. The (111) surface also increase…
Stacking fault energy (SFE) is an essential parameter for characterizing mechanical properties. However, in high entropy alloys (HEAs), the local chemical environment varies significantly across different stacking fault planes, resulting in a substantial fluctuation of SFE values rather than a unique value, which prohibits the prediction of the local SFE. Herein, we proposed an effective descriptor based on the local concentration ratio near stacking fault to quantitatively predict the local SFE of refractory HEAs. We find that the role of a given element in determining SFE strongly depends on…
We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs$_{0.85}$Sb$_{0.15}$ nanowires than InAs nanowires.
Interstitials (carbon and nitrogen) are crucial alloying elements for optimizing the mechanical performance of the twinning-induced plasticity (TWIP) steels in terms of the stacking fault energy (SFE). First-principles calculations have been performed to study the effect of interstitial-induced lattice expansion on the SFE. Comparing the predictions with the SFEs measured for alloys containing C and N, our results suggest that the dominant effect of these interstitials on the SFE is due to the lattice expansion effect.
Using first principles methods we calculated the entire γ-surface of the first order pyramidal planes in α-titanium. Slip on these planes involving dislocations with c + a dislocations is one means by which α-titanium polycrystals may supplement slip on prism planes with a-type Burgers vectors to maintain ductility. We find two stable intrinsic stacking faults with relatively small energies. We show that dissociation of c + a dislocations into two dislocations with Burgers vectors (c + a)/2 is not possible in α-titanium because there is no stable stacking fault at (c + a)/2. Instead we propose…
DFT modelling of stacking faults in hexagonal and cubic GaN
University College London（伦敦大学学院）；London Centre for Nanotechnology, University College London（伦敦大学学院纳米技术伦敦中心）；Research Centre for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)（国立材料研究所（NIMS）材料纳米结构研究中心（WPI-MANA)）
We refit the NRL tight binding parameterization for Aluminium by Mehl \emph{et al} [Phys. Rev. B, 61, 4894 (2000)], to a database generated via full potential Linearized Augmented Plane Wave (LAPW) Density Functional Theory (DFT) calculations. This is performed using a global optimization algorithm paying particular attention to reproducing the correct order of the angular symmetries of the tight binding fcc and bcc bandstructure. The resulting parameterization is found to better predict the hcp phase and both the stable and unstable planar stacking fault defect energies.
Zhao et al. [Phys.Rev.B 58, 13824 (1998)] depicted several atomic structures of domain boundaries on a Si(111) surface and criticized the article by the present author and the co-workers. I will point out that their criticism is incorrect and their structure models have no consistency.
Activation of non-basal slip is essential in improving the deformability of hexagonal crystals. However, the mechanism of non-basal slip remains largely unknown, especially for complex intermetallics such as Laves phases. In this work, the prismatic slip systems of C14 Laves crystals and possible metastable states along the slip paths are assessed using atomistic simulations. Multiple prismatic stacking fault states with the same lattice pattern but different site occupancies and chemical distributions are identified at different inter-atomic layers, temperatures and chemical compositions. The…
We perform a first-principles study of Mg adatom and adislands on the Mg(0001) surface, and Be adatom on Be(0001), to obtain further insights into the previously reported energetic preference of the fcc faulty stacking of Mg monomers on Mg(0001). We first provide a viewpoint on how Friedel oscillations influence ionic relaxation on these surfaces. Our three-dimensional charge-density analysis demonstrates that Friedel oscillations have maxima which are more spatially localized than what one-dimensional average density or two-dimensional cross sectional plots could possibly inform: The well-kno…
We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for $n$-doped systems. We argue that resonant scattering from SFs should be one of the p…
High quality semipolar and nonpolar GaN is crucial in achieving high-performance GaN-based optoelectronic devices, yet it has been very challenging to achieve large-area wafers that are free of basal-plane stacking faults (BSFs). In this work, we report an approach to prepare large-area, stacking-fault-free (SF-free) semipolar GaN on (4-inch) sapphire substrates. A root cause of the formation of BSFs is the emergence of N-polar (000-1) facets during semipolar and non-polar heteroepitaxy. Invoking the concept of kinetic Wulff plot, we succeeded in suppressing the occurrence of N-polar GaN (000-…
Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. The article also discusses the influence of stacking faults, which can create artefacts during the recon…
Hydrogen embrittlement in Zr alloy fuel cladding is a primary safety concern for water based nuclear reactors. Here we investigated the stabilisation of planar defects within the forming hydrides by Sn, the primary alloying element of Zircaloy-4 used in the cladding. In order to explain formation of hydrides and planar defects observed in our experiments, we performed atomic-scale ab initio calculations focusing on the solute interactions with generalized stacking faults in hcp $α$-Zr and fcc zirconium hydrides. Our calculations showed that an increase in Sn concentration leads to a stabilisat…
The class of layered 3D-topological insulators have shown intriguingly anomalous temperature dependence in their thermal expansion coefficients. It was proposed that stacking faults are the origin of the observed anomalous thermal expansion. Here, using femtosecond pump-probe differential reflectivity measurements we probe the carrier and coherently generated totally symmetric A1g1 optical phonons in Bi2Se3. Transient signals also show a low frequency (~GHz) oscillations due to coherent longitudinal acoustic phonons. We extract temperature dependence of optical constants, sound velocity and Yo…
The generalized stacking fault (SFE) energy curves of pure gold (Au) and its binary alloys with transition metals are determined from density functional theory (DFT). Alloy elements Ag, Al, Cu, Ni, Ti, Zr, Zn, In, Ga, Sn, Mn, Cd, Sn, Ta and Cr are substituted into Au at concentrations up to 4%. A comparison of various proposed methodologies to calculate SFEs is given. The intrinsic SFE decreases for all alloying elements from its value for pure Au, but SFE energies (both stable and unstable) vary strongly with the distance of the alloying element from the stacking fault region, and with alloy …
We study the effect of Stacking Fault Energy (SFE) on the deformation behaviour of copper and copper-aluminium alloys using Molecular Dynamics (MD) simulation. We find that both yield stress and the magnitude of stress drop at yield decrease with increasing Al content. This "anomalous" softening behaviour is explained on the basis of nucleation controlled yielding behaviour. Further, the decrease in stress drop is rationalised in terms of the stored energy available at yielding - we show that this decreases with increasing Al. As a result, the maximum dislocation density is found to decrease w…
We calculate the free energies of unstable stacking fault (USF) configurations on the glide and shuffle slip planes in silicon as a function of temperature, using the recently developed Environment Dependent Interatomic Potential (EDIP). We employ the molecular dynamics (MD) adiabatic switching method with appropriate periodic boundary conditions and restrictions to atomic motion that guarantee stability and include volume relaxation of the USF configurations perpendicular to the slip plane. Our MD results using the EDIP model agree fairly well with earlier first-principles estimates for the t…
Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected into these faulted interfaces, providing a way to enhance transmission in future spintronic devices. The electronic states associated to the stacking fault are visualized by tunneling spectroscopy and its origin is identified by band structure calculations.
$α$-Al$_2$O$_3$ sapphire and rubies deformed by dual basal slip at intermediate temperatures (900C-1300$^\circ$C) -- II. dissociation and stacking faults
We report results of large-scale molecular-dynamics (MD) simulations of dynamic deformation under biaxial tensile strain of pre-strained single-crystalline nanometer-scale-thick face-centered cubic (fcc) copper films. Our results show that stacking faults, which are abundantly present in fcc metals, may play a significant role in the dissociation, cross-slip, and eventual annihilation of dislocations in small-volume structures of fcc metals. The underlying mechanisms are mediated by interactions within and between extended dislocations that lead to annihilation of Shockley partial dislocations…
We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.
The post-perovskite phase of (Mg,Fe)SiO3 is believed to be the main mineral phase of the Earth's lowermost mantle (the D" layer). Its properties explain numerous geophysical observations associated with this layer - for example, the D'' discontinuity, its topography and seismic anisotropy within the layer. Here we use a novel simulation technique, first-principles metadynamics, to identify a family of low-energy polytypic stacking-fault structures intermediate between the perovskite and post-perovskite phases. Metadynamics trajectories identify plane sliding involving the formation of stacking…
A systematic study of the compression creep properties of a single-crystalline Co-base superalloy (Co-9Al-7.5W-2Ta) was conducted at 950 °C, 975 °C and 1000 °C to reveal the influence of temperature and the resulting diffusion velocity of solutes like Al, W and Ta on the deformation mechanisms. Two creep rate minima are observed at all temperatures indicating that the deformation mechanisms causing these minima are quite similar. Atom-probe tomography analysis reveals elemental segregation to stacking faults, which had formed in the $γ\prime$ phase during creep. Density-functional-theory calcu…
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite…
We have employed the semidiscrete variational generalized Peierls-Nabarro model to study the dislocation core properties of aluminum. The generalized stacking fault energy surfaces entering the model are calculated by using first-principles Density Functional Theory (DFT) with pseudopotentials and the embedded atom method (EAM). Various core properties, including the core width, splitting behavior, energetics and Peierls stress for different dislocations have been investigated. The correlation between the core energetics and dislocation character has been explored. Our results reveal a simple …
Properties of hcp-Ti such as elastic constants, stacking faults and gamma-surfaces are computed using Density Functional Theory (DFT) and two central force Embedded Atom interaction Models (EAM). The results are compared to previously published calculations and to predicting models. Their implications on the plastic properties of hcp-Ti are discussed.
Extended defects such as stacking faults and anti-site domain boundaries can perturb the band edges in Cu$_2$ZnSnS$_4$ and Cu$_2$ZnSnSe$_4$, acting as a weak electron barrier or a source for electron capture, respectively. In order to find ways to prohibit the formation of planar defects, we investigated the effect of chemical substitution on the stability of the intrinsic stacking fault and metastable polytypes and analyze their electrical properties. Substitution of Ag for Cu makes stacking faults less stable, whereas the other substitutions (Cd and Ge) promote their formation. Ge substituti…
The primary factors controlling defect stability in phase-field crystal (PFC) models are examined, with illustrative examples involving several existing variations of the model. Guidelines are presented for constructing models with stable defect structures that maintain high numerical efficiency. The general framework combines both long-range elastic fields and basic features of atomic-level core structures, with defect dynamics operable over diffusive time scales. Fundamental elements of the resulting defect physics are characterized for the case of fcc crystals. Stacking faults and split Sho…
We propose a new microscopic model for the $\{001\}$ planar defects in diamond commonly called platelets. This model is based on the formation of a metastable stacking fault, which can occur because of the ability of carbon to stabilize in different bonding configurations. In our model the core of the planar defect is basically a double layer of three-fold coordinated $sp^2$ carbon atoms embedded in the common $sp^3$ diamond structure. The properties of the model were determined using {\it ab initio} total energy calculations. All significant experimental signatures attributed to the platelets…
We present ab-initio simulation of manganese, aluminum and carbon impurities in austenite and demonstrate their inhomogeneous distribution, which involves the repulsion of interstitial carbon atoms, the formation of bonded Mn-C pairs as well as a short range Al-ordering of D03-type. The mechanisms for the formation of stacking faults in Fe-Mn-Al-C are considered, and we find that the impurities have influence on the stacking fault energies only when located within a few interatomic layers near stacking fault. As a result, the stacking fault energy does not depend on the average concentration o…
Oxygen greatly affects the mechanical properties of titanium. In addition, dislocations and twin boundaries influence the plastics deformation of hcp metals. As part of a systematic study of defects interactions in Ti, we investigate the interactions of oxygen with (10-12) twin boundary and (10-10) prism plane stacking fault. The energetics of four interstitial sites in the twin geometry are compared with the bulk octahedral site. We show that two of these sites located at the twin boundary are more attractive to oxygen than bulk while the sites away from the boundary are repulsive. Moreover, …
Based on state-of-the-art density-functional-theory methods we calculate the stacking-fault energy of the paramagnetic random Fe-22.5at.%Mn alloy between 300-800 K. We estimate magnetic thermal excitations by considering longitudinal spin-fluctuations. Our results demonstrate that the interplay between the magnetic excitations and the thermal lattice expansion is the main factor determining the anti-Invar effect, the hcp-fcc transformation temperature, and the stacking-fault energy, which is in excellent agreement with measurements.
The formation energy of the interface between face-centered cubic (fcc) and hexagonal close packed (hcp) structures is a key parameter in determining the stacking fault energy (SFE) of fcc metals and alloys using thermodynamic calculations. Often the contribution of the planar fault energy to the SFE has the same order of magnitude as the bulk part, and thus the lack of a precise information about it can become the limiting factor in thermodynamic predictions. Here, we differentiate between the actual interfacial energy for the coherent fcc(111)/hcp(0001) interface and the "pseudo-interfacial …
Stacking Fault Energy (SFE) is an intrinsic alloy property that governs much of the plastic deformation mechanisms observed in fcc alloys. While SFE has been recognized for many years as a key intrinsic mechanical property, its inference via experimental observations or prediction using, for example, computationally intensive first-principles methods is challenging. This difficulty precludes the explicit use of SFE as an alloy design parameter. In this work, we combine DFT calculations (with necessary configurational averaging), machine-learning (ML) and physics-based models to predict the SFE…
High-Ti induced planar-fault transformation toward superlattice extrinsic stacking faults and microtwins in crept CoNi-based superalloys
Helmholtz-Zentrum Hereon（赫尔姆霍茨-海雷恩中心）；Tsinghua University（清华大学）；University of Stuttgart（斯图加特大学）；University of Twente（特文特大学）；Southeast University（东南大学）；Central South university（中南大学）
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the dou…
The intrinsic stacking fault energy (ISFE) $γ$ is a material parameter fundamental to the discussion of plastic deformation mechanisms in metals. Here, we scrutinize the temperature dependence of the ISFE of Au through accurate first-principles derived Helmholtz free energies employing both the super cell approach and the axial Ising model (AIM). A significant decrease of the ISFE with temperature, $-(36$-$39)$\,\% from 0 to 890\,K depending on the treatment of thermal expansion, is revealed, which matches the estimate based on the experimental temperature coefficient $d γ/ d T $ closely. We m…
Predicting the mechanical failure of parts in service requires understanding their deformation behavior, and associated dynamic microstructural evolution up to the near-atomic scale. Solutes are known to interact with defects generated by plastic deformation, thereby affecting their displacement throughout the microstructure and hence the material mechanical response to solicitation. This effect is studied here in a polycrystalline Ni-based superalloy with two different Nb contents that lead to a significant change in their creep lifetime. Creep testing at 750C and 600 MPa shows that the high-…
The structural properties of MgB2 superconductors have been analyzed by means of convergent-beam electron diffraction, high-resolution transmission-electron microscopy, and theoretical simulations. The MgB2 crystal has been identified to have a hexagonal structure with the space group of P6/mmm. Microstructural features of MgB6 materials depend evidently upon the synthesis pressures. Stacking faults and grain boundaries in a sample with the critical current density greater than 105A/cm2 have been extensively investigated.
Long-range magnetic orders in atomically thin ferromagnetic CrI3 give rise to new fascinating physics and application perspectives. The physical properties of two-dimensional (2D) ferromagnetism CrI3 are significantly influenced by interlayer spacing and stacking order, which are sensitive to the hydrostatic pressure and external environments. However, there remains debate on the stacking order at low temperature. Here, we study the interlayer coupling and stacking order of non-encapsulated 2-5 layer and bulk CrI3 at 10 K by Raman spectroscopy; demonstrate a rhombohedral stacking in both antif…
