Sb介导的硅基InAs纳米线层错密度最小化对迁移率的增强
Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
摘要：
报道了用无催化剂分子束外延法在硅（111）衬底上生长InAs $_{1-x}$ Sb $_{x}$纳米线（$0\leq x \leq 0.15$）。我们观察到随着锑含量的增加，InAs $_{1-x}$ Sb $_{x}$纳米线晶体结构中的堆垛层错密度急剧下降。这种减少导致场效应迁移率的显着增加，这是在室温下的InAs $_{0.85}$ Sb $_{0.15}$纳米线比InAs纳米线大三倍以上。
英文摘要：
We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs$_{0.85}$Sb$_{0.15}$ nanowires than InAs nanowires.
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