$α$-Al$_2$O$_3$ 蓝宝石和红宝石在中温（900°C-1300°C）下由双基面滑移变形——II. 解离与层错
$α$-Al$_2$O$_3$ sapphire and rubies deformed by dual basal slip at intermediate temperatures (900C-1300$^\circ$C) -- II. dissociation and stacking faults
AI总结：
本研究通过TEM观察蓝宝石和红宝石在中温压缩变形后的位错结构，揭示了层错偶极子的滑移形成机制，并解释了30° Peierls谷取向，发现铬对层错能影响较小。
摘要：
蓝宝石和红宝石（未掺杂和掺铬的 $α$-Al$_2$O$_3$ 单晶）已在低于先前基面滑移位错研究（见第一部分）所用温度的条件下进行了压缩变形。在1400°C以上，先前的透射电子显微镜研究观察到若干涉及基面外堆垛层错和部分位错（解离、层错偶极子）的特征。这些特征的形成涉及由原子扩散控制的攀移。本文讨论了攀移解离位错的性质与位错动力学的关系。在较低变形温度（1000-1100°C）下的位错结构TEM检查表明，形成了类似的特征，但这些特征往往涉及交滑移。提出了一种通过滑移形成层错偶极子的新机制，并提出了30° Peierls谷取向的解释。铬的存在对垂直于基面的平面上的层错能影响较小。
英文摘要：
Sapphire and rubies (undoped and Cr-doped $α$-Al$_2$O$_3$ single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane (see part I). Above 1400$^\circ$C, several features associating stacking faults out of the basal planes and partial dislocations (dissociation, faulted dipoles) have been observed in previous transmission electron microscope investigations. The formation of these features involves climb controlled by atomic diffusion. Properties of climb dissociated dislocations are discussed in relation with dislocation dynamics. TEM examination of dislocation structures at lower deformation temperatures (1000-1100$^\circ$C) shows that similar features are formed but that they often imply cross-slip. A new mechanism for the formation of faulted dipole by glide is presented and an explanation for the 30° Peierls valley orientation is proposed. The presence of chromium has a small influence on stacking fault energies on planes perpendicular to the basal plane.
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