Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculations. The analysis shows that the MTJs with Co-based alloys (CoNi, CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs have energetically favored Co-O interfaces where interfacial antibonding between Co $d$ and O $p$ states is formed around the Fermi level. We find that the resonant tunneling of the antibonding states, called the interface resonant tunneling, is the origin of the obtained high TMR ratios. Our calculation of the magnetocrystalline anisotropy shows that many $L1_1$ alloys have large perpendicular magnetic anisotropy (PMA). In particular, CoPt has the largest value of anisotropy energy $K_{\rm u} \approx 10\,{\rm MJ/m^3}$. We further conduct a perturbation analysis of the PMA with respect to the spin-orbit interaction and reveal that the large PMA in CoPt and CoNi mainly originates from spin-conserving perturbation processes around the Fermi level.
We report the angular dependence of magnetoresistance in two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface. We find that this interfacial magnetoresistance exhibits a similar angular dependence to the spin Hall magnetoresistance observed in ferromagnet/heavy metal bilayers, which has been so far discussed in the framework of bulk spin Hall effect of heavy metal layer. The observed magnetoresistance is in qualitative agreement with theoretical model calculation including both Rashba spin-orbit coupling and exchange interaction. Our result suggests that magnetic interfaces subject to…
The microstructure of a Cu/V nanocomposite wire processed by cold drawing was investigated by high resolution transmission electron microscopy and atom probe tomography. The experimental data clearly reveal some deformation induced interfacial mixing where the vanadium filaments are nanoscaled. The mixed layer is a 2nm wide vanadium gradient in the fcc Cu phase. This mechanical mixing leads to the local fragmentation and dissolution of the filaments and to the formation of vanadium super saturated solid solutions in fcc Cu.
Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to a ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveli…
The formation energy of the interface between face-centered cubic (fcc) and hexagonal close packed (hcp) structures is a key parameter in determining the stacking fault energy (SFE) of fcc metals and alloys using thermodynamic calculations. Often the contribution of the planar fault energy to the SFE has the same order of magnitude as the bulk part, and thus the lack of a precise information about it can become the limiting factor in thermodynamic predictions. Here, we differentiate between the actual interfacial energy for the coherent fcc(111)/hcp(0001) interface and the "pseudo-interfacial …
The thickness dependence of spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers is studied using the first-principles non-equilibrium Green's function formalism combined with the Anderson disorder model. A systematic expansion in orthogonal vector spherical harmonics is used for the angular dependence of the torque. The damping-like torque in Co/Pt and Co/Au bilayers can be described as a sum of the spin-Hall contribution, which increases with thickness in agreement with the spin-diffusion model, and a comparable interfacial contribution. The magnetoconductance in the p…
The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, the $s$-$d$ exchange interaction between conduction $s$ and localized $d$ electrons at interfacial ferromagnetic layers. By calculating the temperature dependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMR ratio significantly decreases with increasing temperature owing to the spin-flip scattering in the $Δ_1$ state induced by the $s$-$d$ exchange …
Magnetoelectric coupling has been a trending research topic in both organic and inorganic materials and hybrids. The concept of controlling magnetism using an electric field is particularly appealing in energy efficient applications. In this spirit, ferroelectricity has been introduced to organic spin valves to manipulate the magneto transport, where the spin transport through the ferromagnet/organic spacer interfaces (spinterface) are under intensive study. The ferroelectric materials in the organic spin valves provide a knob to vary the interfacial energy alignment and the interfacial crysta…
The electrical resistivity and the anisotropic magnetoresistance (AMR) was investigated for Ni Co alloys at and below room temperature. The Ni Co alloy layers having a thickness of about 2 um were prepared by electrodeposition on Si wafers with evaporated Cr and Cu underlayers. The alloy composition was varied in the whole concentration range by varying the ratio of Ni sulfate and Co sulfate in the electrolyte. The Ni Co alloy deposits were investigated first in the as deposited state on the substrates and then, by mechanically stripping them from the substrates, as self supporting layers both…
We determine from first-principles the Curie temperature Tc for bulk Co in the hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bcc and bct Fe. For bcc-Co, Tc=1420 K is predicted. This would be the highest Curie temperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunnel junctions offer high magnetoresistance ratios even at room temperature. The Curie temperatures are calculated by mapping ab initio results to a Heisenberg model, which is solved by a Monte Carlo method.
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m2 is obtained for the samples annealed at 400C. An enhanced magnetoresistance of 60% has also been achieved. The Vhalf, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1V, which is substantially higher than t…
A detailed study has been carried out on $γ^\prime$ (AlAg$_2$) precipitates in Al-Ag and Al-Ag-Cu alloys to reconcile the conflicting reports on chemical ordering and stacking faults in this phase. High angle annular dark field scanning transmission electron microscopy and convergent beam electron diffraction show no indication of chemical ordering on alternate basal planes of $γ^\prime$ precipitates in alloys aged at 473 K for 2-23 h. Precipitates were visible as Ag-rich regions with 1-13 fcc$\rightarrow$hcp stacking faults, corresponding to $γ^\prime$ platelets with thicknesses ranging from …
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000$\%$, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial $d$-$p$ antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/…
We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the insulating spacer. We aim to explain the strong interface sensitivity of the tunneling properties of MTJ's and investigate the influence of electron scattering at the nonideal interfaces on the degradation of the TMR magnitude. The generalized Kubo formalism and the Green's functions method were used to calculate the conductance of the system. The vertex co…
In this work the coupled motion of two different phases of Σ5(210)[001] grain boundaries were investigated by molecular dynamics simulations of fcc Cu. The effect of interfacial structural phase transitions is shown to have a profound effect on both the shear strength and the nature of the coupled motion. Specifically, the motion of the two different phases is described by ideal coupling factors β<100> and β<110> that have different magnitudes and even signs. Additionally, the shear strength for the two inter- facial phases is observed to differ by up to 40 % at the lowest temperatures simulat…
We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The magnetoresistance analysis yields, for the Pt/Co interface, a temperature-independent Rashba parameter in the order of 1e-11 eV m that agrees with theoretical calculations, along with an effective interfacial REE thickness of several angstroms which is in overall consistency with our previous spin-orbit torque analysis. In particular, our results suggest that bot…
The interfacial Dzyaloshinskii-Moriya interaction (DMI) is of great interest as it can stabilize chiral spin structures in thin films. Experiments verifying the orientation of the interfacial DMI vector remain rare, in part due to the difficulty of separating vector components of DMI. In this study, Fe/Ni bilayers and Co/Ni multilayers were deposited epitaxially onto Cu(001) and Pt(111) substrates, respectively. By tailoring the effective anisotropy, spin reorientation transitions (SRTs) are employed to probe the orientation of the DMI vector by measuring the spin structure of domain walls on …
To understand the effects of lattice mismatch on heteroepitaxial growth, we have studied the equilibrium structure and orientation relationships (ORs) of FCC films grown epitaxially on FCC substrates, using molecular dynamics simulations in conjunction with embedded atom method potentials. Three film/substrate systems have been investigated, namely: Ag on Cu, Ag on Ni and Pb on Al. These systems cover a significant range of lattice mismatch, from 12.6% for Ag/Cu to 21.8% for Pb/Al. For each system, the ORs of films on six different substrate orientations, namely: (100), (511), (311), (211), (3…
First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric perovskite NaNbO3. Spin-dependent coherent tunneling was calculated within the framework of non-equilibrium Green's function technique. Both spin polarization and tunnel magnetoresistance (TMR) are affected by the interfacial strain but their responses to compressive and tensile strains are different. Spin polarization across the interface is fully preserved under a…
Antiferromagnetic (AF) spintronics is merit on ultra-high operator speed and stability in the presence of magnetic field. To fully use the merit, the device should be pure rather than hybrid with ferromagnet or ferrimagnet. For the magnetism in the antiferromagnet is canceled by that of different sublattices, breaking the symmetry in the material can revive the native magnetism, which can be detected by the magnetoresistance (MR) effect. Achieving noticeable MR effect in the pure AF device is diffcult but essential for the AF spintronic applications. Here, we study the tunnel magnetoresistance…
We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of anisotropic magnetoresistance and vectorialresolved magnetization hysteresis loops, measured simultaneously and reproduced with numerical simulations. We show how the induced unidirectional magnetic anisotropy at the FM/AFM interface results in strong asymmetric transport behaviors, which are chiral around the magnetization hard-axis direction. Similar asymmetric fea…
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultra-fast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a (001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 FePd P-SAFM structure shows a large bulk PMA (~10.2 …
In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $Δm_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $Δm_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the $Δm_{AFM}$. In the training effect, the $Δm_{AFM}$ changes continuously. This work highlights the fundamental role of the $Δm_{AFM}$ in th…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resista…
We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Almost perfectly matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, indicating large interfacial spin-asymmetry, high …
Magnetic nanoparticles (MnPs) are relevant to a wide range of applications including high density information storage and magnetic resonance imaging to name but a few. Among the materials available to prepare MnPs, FePt is attracting growing attention. However, to harvest the strongest magnetic properties of FePt MnPs, a thermal annealing is often required to convert face-centered cubic as synthesized nPs into its tetragonal phase. Rarely addressed are the potential side effects of such treatments on the magnetic properties. In this study, we focus on the impact of silica shells often used in …
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in alfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRh and resultantly large variation of the density of states in the vicin…
The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer between the Fe and MgO layers enhances PMA significantly. In this study, we perform x-ray magnetic circular dichroism measurements on Fe/LiF/MgO multilayers to reveal the origin of the PMA enhancement. We find that the LiF insertion increases the orbital-magnetic-moment anisotropy and thus the magnetic anisotropy energy. We attribute the origin of this orbital-ma…
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-plane lattice periodicity of SrTiO$_{3}$ is about twice that of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) are folded in the $k_x$-$k_y$ plane corresponding to the $ab$ plane of t…
We theoretically analyze the anisotropic magnetoresistance (AMR) effects of bcc Fe (+), fcc Co (+), fcc Ni (+), Fe$_4$N (-), and a half-metallic ferromagnet (-). The sign in each ( ) represents the sign of the AMR ratio observed experimentally. We here use the two-current model for a system consisting of a spin-polarized conduction state and localized d states with spin--orbit interaction. From the model, we first derive a general expression of the AMR ratio. The expression consists of a resistivity of the conduction state of the $σ$ spin ($σ=\uparrow$ or $\downarrow$), $ρ_{s σ}$, and resistiv…
Recent studies on the electrical switching of tetragonal antiferromagnet (AFM) via N{é}el spin-orbit torque have paved the way for the economic use of antiferromagnetic materials. The most difficult obstacle that presently limits the application of antiferromagnetic materials in spintronics, especially in memory storage applications, could be the small and fragile magnetoresistance (MR) in the AFM-based nanostructure. In this study, we investigated the spin transports in Mn$_2$Au-based tunnel junctions based onthe first-principle scattering theory. Giant MRs more than $1000\%$ are predicted in…
No systematic studies have been carried out on the giant magnetoresistance (GMR) of electrodeposited (ED) Fe-Co/Cu multilayers since the elaboration of a method for the optimization of the Cu layer deposition potential. In this paper, we present results on the electrochemical optimization of the Cu layer deposition potential which was found to depend on the relative iron concentration in the bath. An X-ray diffraction study of ED Fe5Co95(1.5 nm)/Cu(dCu) multilayers with dCu ranging from 0.8 nm to 10 nm revealed an fcc structure. For most of the multilayers, a weak superlattice satellite reflec…
We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the $\mathit{n-}$GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/$n$-GaAs hetrostructures, including Co$_{2}$MnSi/$n$-GaAs, Co$_{2}$FeSi/$n$-GaAs and Fe/$n$-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how …
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics. However, the core process of the electron symmetry filtering breaks down under applied bias, dramatically reducing the TMR above 0.5 V. This strongly hampers the application range of MTJs. To circumvent the problem, resonant tunneling between ferromagnetic electrodes through quantum well states in thin layers has been used so far. This mechanism, however, is mai…
Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for developing multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 μm2 and improved morphology. The nonlinear and weakly temperature-dependent current-voltage (I-V) characteristics in combination with the low organic barrier height suggest tunneling as the dominant transport mechanism in the st…
We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, corresponding to an interfacial spin polarization of > 95% assuming identical interfaces. These results show that…
The optimal Co concentration in Fe$_{1-x}$Co$_{x}$/MgO magnetic tunnel junctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is still under investigation. We perform a first-principles transport study on MTJs using disordered electrodes modeled using the virtual crystal approximation (VCA) and ordered alloys with various MgO barrier thicknesses. We find that 10-20$%$ Co concentration maximizes TMR using VCA to represent disorder in the electrodes. This TMR peak arises due to a minority d-type interfacial resonance state (IRS) that becomes filled with small Co doping, leading to a d…
Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet (FM) electrodes in organic spin valves (OSV), as well as for magnetic spin manipulation of metal-organic complexes at the molecular level. In the latter, specifically, the substrate-induced magnetic switching in a paramagnetic molecule has been evoked extensively, but studied by delicate surface spectroscopies. Here we present evidence of the substantial mag…
Co-rich Co$_{1-x}$Mn$_x$ alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration $x$ in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the $x$ = 0.25 bcc alloy electrodes [Kunimatsu et al., Appl. Phys. Express 13, 083007 (2020)]. Here, we report systematic study of structure and magnetism for epitaxial thin films as well as the TMR effe…
We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic γ -IrMn3/Y3Fe5O12(YIG) and Pt/YIG heterostructures. For γ -IrMn3/YIG, the EAMR and the AHLE resistivity change sign with temperature due to the competition between the spin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE) induced by the interfacial antiferromagnetic uncompensated magnetic moment. In contrast, for Pt/YIG the AHLE resistivity changes sign with temperature whereas no sign change is observed in the EAMR. This is because the MPE and the SMR …
The 5d transition-metal oxides have been an intriguing platform to demonstrate efficient charge to spin current conversion due to a unique electronic structure dominated by strong spin-orbit coupling. Here, we report on stacking-order effect of spin-orbit torque (SOT), spin-Hall magnetoresistance, and magnetic anisotropy in bilayer Ni$_{81}$Fe$_{19}$-5d iridium oxide, IrO$_2$. While all the IrO$_2$ and Pt control samples exhibit large dampinglike-SOT generation stemming from the efficient charge to spin current conversion, the magnitude of the SOT is larger in the IrO$_2$ (Pt)-bottom sample th…
The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgO interface is important to interpret the strong annealing temperature dependence of tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunnel junctions, which increases with annealing temperature from 20% after annealing at 200C up to a maximum value of 112% after annealing at 350C. While the well defined nearest neighbor ordering indicating crystallinity of the MgO barrier does not change by the annealing, a small amount of interfacial Fe-O at the lower Co-Fe-B / MgO interface is found in the as grown samples,…
We use a two-orbital double-exchange model including Jahn-Teller lattice distortions, superexchange interactions, and long-range Coulomb (LRC) interactions to investigate the origin of magnetically disordered interfaces between ferromagnetic metallic (FM) and antiferromagnetic insulating (AFI) manganites in FM/AFI superlattices. The induced magnetic moment in the AFI layer varies non-monotonically with increasing AFI layer width as seen in the experiment. We provide a framework for understanding this non-monotonic behavior which has a one-to-one correspondence with the magnetization of the FM …
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/C…
Theory of tunnel magnetoresistance in magnetic tunnel junctions with hexagonal boron nitride barriers: mechanism and application to ferromagnetic alloy electrodes
We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetis…
Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors
National Laboratory of the Rockies（落基山国家实验室）；Renewable and Sustainable Energy Institute, University of Colorado Boulder（科罗拉多大学博尔德分校可再生能源与可持续能源研究所）；North Carolina State University（北卡罗来纳州立大学）；University of Wisconsin-Madison（威斯康星大学麦迪逊分校）；Center for Hybrid Organic Inorganic Semiconductors for Energy（能源混合有机无机半导体中心）
Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk properties. Here, by utilizing tunneling anisotropic magnetoresistance in a single-barrier heterostructure composed of La0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (LAO)/ Nb-doped SrTiO3 (001), we reveal the presence of a peculiar strong two-fold magnetic anisotropy (MA) along the [110]c direction at the LSMO/LAO interface, which is not observed in bulk LSMO. This MA shows…
Within the Kubo-Greenwood formalism we use the fully relativistic, spin-polarized, screened Korringa-Kohn-Rostoker method together with the coherent-potential approximation for layered systems to calculate the resistivity for the permalloy series Ni$_{c}$Fe$_{1-c}$. We are able to reproduce the variation of the resistivity across the entire series; notably the discontinuous behavior in the vicinity of the structural phase transition from bcc to fcc. The absolute values for the resistivity are within a factor of two of the experimental data. Also the giant magnetoresistance of a series of perma…
Quantum critical behavior has been associated with some of the most exotic emergent states of matter including high-temperature superconductivity. Much of the research into quantum critical point (QCP) physics has been hampered by the lack of model systems simple enough to be analyzed by theory. Here, we show that the concentrated solid solution fcc alloys, including the so-called high-entropy alloys, are ideal model systems to study the effects of chemical disorder on emergent properties near a quantum critical region. The face centered cubic (fcc) alloy NiCoCrx with x near 1 is found to be c…
Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we investigate thermal stability (both structure and magnetization) and the electric field control of magnetic anisotropy on Co2FeAl (CFA)/MgO. A phase diagram of structural thermal stability of the CFA/MgO interface is illustrated. An interfacial perpendicular-anisotropy, coming from the Fe-O orbital hybridization, provides high magnetic thermal stability and a lo…
