We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic γ -IrMn3/Y3Fe5O12(YIG) and Pt/YIG heterostructures. For γ -IrMn3/YIG, the EAMR and the AHLE resistivity change sign with temperature due to the competition between the spin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE) induced by the interfacial antiferromagnetic uncompensated magnetic moment. In contrast, for Pt/YIG the AHLE resistivity changes sign with temperature whereas no sign change is observed in the EAMR. This is because the MPE and the SMR play a dominant role in the AHLE and the EAMR, respectively. As new types of galvanomagnetic property, the AHLE and the EAMR have proved vital in disentangling the MPE and the SMR in metal/insulating-ferromagnet heterostructures.
A number of recent studies indicate that the charge conduction of the LaAlO$_3$/SrTiO$_3$ interface at low temperature is confined to filaments which are linked to structural domain walls in the SrTiO$_3$ with drastic consequences for example for the temperature dependence of local transport properties. We demonstrate that as a consequences of this current carrying filaments on the nano-scale the magnetotransport properties of the interface are highly anisotropic. Our magnetoresistance measurements reveal that the magnetoresistance in different nanostructures ($<500nm$) is random in magnitude …
The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe2, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transp…
A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3
Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior
Study of magnetotransport properties of ScPtBi revealed simultaneously: a negative contribution to the longitudinal magnetoresistance, the planar Hall effect, and distinct angular narrowing of the longitudinal magnetoresistance { three hallmarks of chiral magnetic anomaly (pumping of axial charge between Weyl nodes), a distinct property of topological semimetals. Electronic structure calculations show that structural defects, such as antisites and vacancies, bring substantial density of states at the Fermi level of ScPtBi, indicating that it is a semimetal, not a zero-gap semiconductor, as pre…
Magnetic lanthanide half-Heuslers ($R$PtBi; $R$ being the lanthanide) represent an attractive subgroup of the Heusler family and have been identified as ideal candidates for time reversal symmetry breaking topological Weyl semimetals. In this paper, we present the detailed analysis of the magnetotransport properties of frustrated antiferromagnet TbPtBi. This material shows large, non-saturating magnetoresistance (MR) with unusual magnetic field dependence. The MR of TbPtBi is significantly anisotropic with respect to the magnetic field, applied along different crystallographic directions and i…
We report chirality-induced current-in-plane magnetoresistance (CIP-MR) in chiral molecule/ferromagnetic metal bilayer at room temperature. The previously reported chiralityinduced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect that needs charge-current passing through the molecule. In contrast, the observed CIP-MR in the present study requires no bias charge current through the molecule. The temperature dependence of CIP-MR suggests thermally induced spin-polarization in the chiral molecules is the key for the observ…
Topological insulators have emerged as an important material class for efficient spin-charge interconversion. Most topological insulators considered to date are binary or ternary compounds, with the exception of $α$-Sn. Here we report a comprehensive characterization of the growth, magnetotransport properties, and current-induced spin-orbit torques of $α$-Sn and $β$-Sn-based ferromagnetic heterostructures. We show that $α$-Sn grown with a Bi surfactant on CdTe(001) promotes large spin-orbit torques in a ferromagnetic FeCo layer at room temperature, comparable to Pt, whereas $α$-Sn grown withou…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the…
We demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consiste…
Anomalous magnetotransport in a non-collinear correlated kagome ferromagnet MgMn6Sn6
S. N. Bose National Centre for Basic Sciences（S.N. 玻色基础科学国家中心）；Max Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；ISIS Neutron and Muon Source, Science and Technology Facilities Council, Rutherford Appleton Laboratory（ISIS中子与μ子源，科学与技术设施委员会，拉瑟福德阿普尔顿实验室）；School of Physical Sciences, Indian Institute of Technology Goa（印度果阿理工学院物理科学学院）
In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant magnetic scattering, we experimentally demonstrate the presence of such closure domains and estimate their sizes and relative contribution to surface magnetization. Magnetotransport experiments show that the behavior of the magnetoresistance depends on the measurement geometry as well as on the temperature. When the electric current ows perpendicular to the…
The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contributio…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM IrMn3 thin films with coexisting AFM phases into comp…
Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the crystalline ferromagnetic Fe$_2$Ge phase. The observed high temperature maximum in the longitudinal resistivity, as well as the observed suppression of electron-magnon scattering at low temperatures, point to the presence of strong spin polarization in this material. Measurements of the Hall resistivity, $ρ_{xy}$, show contributions from both the ordinary Ha…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a no…
We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $γ$-MoTe$_2$, protected from oxidation. We find that the magnetoresistance is systematically suppressed with reduced thickness. This occurs concomitantly with both a decrease in carrier mobility and increase in electron-hole imbalance. We model the two effects separately and conclude that the XMR effect is more sensitive to the former.
Dc and ac-magnetic susceptibility ($χ$), specific heat ($C_\mathrm{P}$), electrical resistivity ($ρ$) and magnetoresistance measurements performed on the new polycrystalline compound $\mathrm{Gd_2AgSi_3}$, crystallizing in the $α$-$\mathrm{ThSi_2}$ tetragonal structure, are reported. Two magnetic phase transitions were observed in dc and ac susceptibility, specific heat, and resistivity measurements at temperatures $\mathrm{T_{N_1}} = 11$ K and $\rm{T_{N_2}} = 20$ K, despite a single site occupied by Gd atom, which is an indication of the complex magnetic behavior. $\mathrm{Gd_2AgSi_3}$ turns …
Pd$_{3}$Bi$_{2}$Se$_{2}$ has been proposed to be topologically non-trivial in nature. However, evidence of its non-trivial behavior is still unexplored. We report the growth and magneto-transport study of Pd$_{3}$Bi$_{2}$Se$_{2}$ thin films, revealing for the first time the contribution of two-dimensional (2D) topological surface states. We observe exceptional non-saturated linear magnetoresistance which results from Dirac fermions inhabiting the lowest Landau level in the quantum limit. The transverse magnetoresistance changes from a semi-classical weak-field $B^{2}$ dependence to a high-fiel…
First order transition from ferromagnetism to antiferromagnetism in Ce(Fe$_{0.96}$Al$_{0.04}$)$_2$: a magnetotransport study
详细研究了多晶Ce（Fe $_{0.96}$ Al $_{0.04}$）$_2$样品从铁磁到反铁磁的一级磁相变过程中的磁输运行为。这项研究清楚地提出了与一级转变有关的各种一般特征，即，滞后，相共存，过冷和过热，亚稳区的存在和限制。这些结果的磁输运研究展示和支持所有有趣的热磁历史效应，在我们早期的直流磁化研究相同的样品。这里最值得注意的是初始（或原始）电阻率对场的曲线位于在足够高的正强度和负强度之间循环磁场时获得的滞后“蝴蝶形”磁阻率环之外。这些发现与在其磁性对应物（即，DC磁化）归因于在低温和高磁场下一级转变动力学的停滞。
Transition metal dichalcogenides (TMDC) stand out with their high chemical stability and the possibility to incorporate a wide range of magnetic species between the layers. The behavior of conduction electrons in such materials intercalated by 3d-elements is closely related to their magnetic properties and can be sensitively controlled by external magnetic fields. Here, we study the magnetotransport properties of NbS$_2$ intercalated with Mn, Mn$_{1/4}$NbS$_2$, demonstrating a complex behavior of the magnetoresistance and of the ordinary and anomalous Hall resistivities. Application of pressur…
