准一维Hollandite Ba1. 2Rh8 O 16中杂质散射对磁输运性质的主导作用
Dominant role of impurity scattering over crystalline anisotropy for magnetotransport properties in the quasi-1D Hollandite Ba1.2Rh8O16
摘要：
角磁输运测量已被执行，以解决准一维Hollandite Ba1.2Rh8O16的磁阻的起源。测定了三种不同杂质量的样品。我们观察到，低温电阻率的回升是不是由于电荷密度波过渡，杂质散射的低温输运性质的主导作用，而不是证明。利用Kohler图和磁场作用下电阻的角度依赖性，分离了磁电阻分量。它显示了各向同性的，可能是自旋驱动的，负磁阻的主要贡献。然后，电流磁特性与近藤效应一致，并且在低温下基本上呈现3D。
英文摘要：
Angular magnetotransport measurements have been performed to tackle the origin of the magnetoresistance in the quasi-1D Hollandite Ba1.2Rh8O16. Three samples of different impurities amount were measured. We observe that the low temperature resistivity upturn is not due to a charge density wave transition, and a dominant role of impurities scattering for low temperature transport properties is instead demonstrated. The components of magnetoresistance were separated by using the Kohler plot and the angular dependency of the resistance under magnetic field. It shows the major contribution of an isotropic, likely spin driven, negative magnetoresistance. Galvanomagnetic characteristics are then consistent with a Kondo effect and appear to be essentially 3D at low temperature.
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