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arXiv 1209.6174cond-mat.str-elcond-mat.mtrl-sci
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应变控制磁输运理论与锰氧化物薄膜铁磁绝缘相的稳定化

Theory of Strain-Controlled Magnetotransport and Stabilization of the Ferromagnetic Insulating Phase in Manganite Thin Films

Anamitra Mukherjee, William S. Cole, Patrick Woodward, Mohit Randeria, Nandini Trivedi

摘要:

我们表明,施加半掺杂锰氧化物上的应变,使得有可能调整系统的金属-绝缘体过渡附近,从而产生巨大的磁阻(CMR)响应。这种相位竞争不仅允许控制铁磁金属锰氧化物中的CMR,而且可以用于在半掺杂时在其他鲁棒绝缘体中产生CMR响应。此外,从我们的现实微观模型的应变和磁输运计算内的久保形式主义,我们证明了一个惊人的结果,应变工程,拉伸应变下,铁磁电荷有序绝缘体,以前无法访问的实验,变得稳定。

英文摘要:

We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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