双层锰氧化物（La $_{0.4}$ Pr $_{0.6}$）$_{1.2}$ Sr $_{1.8}$ Mn $_{2}$ O $_{7}$顺磁绝缘相中的巨电阻和巨磁阻阶跃
Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$
摘要：
我们报告了在（La $_{0.4}$ Pr $_{0.6}$）$_{1.2}$ Sr $_{1.8}$ Mn $_{2}$ O $_{7}$的顺磁绝缘（PMI）状态下在$ab$ -平面上施加电流引起的低温电阻的显著降低。在较低的温度下观察到一个巨大的电阻效应，达到~ 95%。在低于10 K的低温下，在5 T附近出现一个巨大的磁阻阶跃，并伴随着绝缘体-金属转变的超尖锐宽度。向晶体注入更高的电流会导致阶跃跃迁消失。这些发现与研究晶体的PMI矩阵内钉扎的短程电荷有序簇的存在有密切的关系。
英文摘要：
We report a significant decrease in the low-temperature resistance induced by the application of an electric current on the $ab$-plane in the paramagnetic insulating (PMI) state of (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$. A colossal electroresistance effect attaining -95% is observed at lower temperatures. A colossal magnetoresistive step appears near 5T at low temperatures below 10K, accompanied by an ultrasharp width of the insulator-metal transition. Injection of higher currents to the crystal causes a disappearance of the steplike transition. These findings have a close relationship with the presence of the short-range charge-ordered clusters pinned within the PMI matrix of the crystal studied.
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