（Ge，Mn）纳米柱在GaAs（100）上的生长：形貌和共掺杂对磁输运的作用
Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport
摘要：
改变生长表面的形态和（Ge，Mn）层中残留杂质的性质-通过使用不同的衬底-显着改变铁磁性富Mn夹杂物的形态和磁输运性质。我们得到了p型层与纳米柱，无论是平行或纠缠，和n型层与球形集群。空穴表现出异常的霍尔效应，和电子表现出隧道磁阻，都具有明显的依赖于富Mn夹杂物的磁化;空穴表现出轨道MR，和电子只显示正常的霍尔效应，以及由于弱本地化的磁阻的附加组件，所有这三个是独立的富Mn夹杂物的磁性状态。所确定的机制指向富Mn材料的费米能级相对于锗的价带的位置作为这种混合层中的关键参数。
英文摘要：
Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall effect, and electrons exhibit a tunneling magnetoresistance, both with a clear dependence on the magnetization of the Mn-rich inclusions; holes exhibit orbital MR, and electrons show only the normal Hall effect, and an additional component of magnetoresistance due to weak localization, all three being independent of the magnetic state of the Mn rich inclusions. Identified mechanisms point to the position of the Fermi level of the Mn-rich material with respect to the valence band of germanium as a crucial parameter in such hybrid layers.
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