$γ$ '-Ga PDMATHAAB Fe $_{4-y}$ N纳米晶相分离（Ga，Fe）N的磁输运
Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals
摘要：
研究了含$γ$ '-$_y$ Fe $_{4-y}$ N（0\，$<$ \，y\，$<$ 1）纳米晶（NC）的磁输运性质.的电阻率和磁阻（MR）的演变作为温度的函数点在两个导电机制：即传统的Arrhenius型的一个下降到50\，K，和莫特可变范围跳跃在较低的温度下，其中自旋极化电流之间的传输在一个制度，其中声子散射效应不占主导地位的NC。低于25 K时，MR在磁场$<$ 1 T下显示滞后贡献，并且与矫顽场成比例。在整个考虑的温度范围内，各向异性磁阻的值比先前报道的$γ$ ′-Fe $_4$ N薄膜的值大一个数量级，证实了在这些层中观察到的MR由嵌入的纳米晶体决定。
英文摘要：
The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $γ$'-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.
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