arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2512.08046cond-mat.mtrl-sci
收藏

混合有机-无机钙钛矿半导体中的手性诱导磁电阻

Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors

National Laboratory of the Rockies(落基山国家实验室);Renewable and Sustainable Energy Institute, University of Colorado Boulder(科罗拉多大学博尔德分校可再生能源与可持续能源研究所);North Carolina State University(北卡罗来纳州立大学);University of Wisconsin-Madison(威斯康星大学麦迪逊分校);Center for Hybrid Organic Inorganic Semiconductors for Energy(能源混合有机无机半导体中心)
Md Azimul Haque, Pius Markus Theiler, Ian A. Leahy, Steven P. Harvey, Jeiwan Tan, Matthew P Hautzinger, Margherita Taddei, Aeron McConnell, Andrew Greider, Andr… 展开作者

Md Azimul Haque, Pius Markus Theiler, Ian A. Leahy, Steven P. Harvey, Jeiwan Tan, Matthew P Hautzinger, Margherita Taddei, Aeron McConnell, Andrew Greider, Andrew H. Comstock, Yifan Dong, Kirstin Alberi, Yuan Ping, Peter C. Sercel, Joseph M. Luther, Dali Sun, Matthew C. Beard

AI总结:

研究通过手性诱导自旋选择性效应在混合有机-无机钙钛矿半导体中实现超过100%的室温磁电阻,揭示了手性结构与自旋输运的关系。

摘要:

在具有半导体性质和可合成调节手性的手性金属卤化物半导体(CMHS)中,结合半导体性质和可合成调节的手性,提供了一个在室温下控制电子自旋性质的有力平台,利用如手性诱导自旋选择性(CISS)等效应,开发新的光-自旋电子功能。我们报道了在由铁磁体(FM)、隧道屏障和CMHS组成的配置中,室温下的CISS诱导磁电阻(CISS-MR)超过100%的自旋阀。高CISS-MR归因于由手性引起的界面自旋选择性隧道屏障,可以产生超越由相邻FM接触的内在自旋极化所限制的电流不对称因子。CISS-MR对CMHS组成表现出强依赖性,揭示了CISS与结构手性的结构-性质关系。观察到的异常大的隧道MR响应不同于在无隧道屏障的情况下FM/CMHS界面处由于近邻效应产生的细微各向异性MR。我们的研究为手性半导体中的电荷到自旋转换提供了见解,为控制和增强CISS响应并将其用于功能平台提供了材料设计原理。

英文摘要:

The combination of semiconducting properties and synthetically tunable chirality in chiral metal halide semiconductors (CMHS) offer a compelling platform for room temperature control over electronic spin properties, leveraging effects such as chirality-induced spin selectivity (CISS) for the development of new opto-spintronic functionalities. We report room-temperature CISS-induced magnetoresistance (CISS-MR) exceeding 100% for spin valves in a configuration consisting of a ferromagnet (FM), tunneling barrier, and CMHS. The high CISS-MR is attributed to interfacial spin-selective tunneling barrier induced by the chirality, which can produce current dissymmetry factors that surpass the limit imposed by the Jullière model governed by the intrinsic spin polarization of the adjacent FM contact. The CISS-MR exhibits a strong dependence on the CMHS composition, revealing a structure-property relationship between CISS and structural chirality. The observed exceptionally large tunneling MR response differentiates from a subtle anisotropic MR arising from the proximity effect at the FM/CMHS interface in the absence of a tunneling barrier. Our study provides insights into charge-to-spin interconversion in chiral semiconductors, offering materials design principles to control and enhance CISS response and utilize it in functional platforms.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑