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arXiv 1303.3473cond-mat.mtrl-sci
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Heusler/Oxide界面磁化及其结非共线自旋输运的热稳定性和电学控制

Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction

Zhaoqiang Bai, Lei Shen, Yongqing Cai, Qingyun Wu, Minggang Zeng, Guchang Han, Yuan Ping Feng

摘要:

对于下一代自旋电子器件,如计算机存储器和逻辑芯片,需要同时满足高热稳定性、低功耗和高自旋极化。本文从第一性原理出发,研究了Co2 FeAl(CFA)/MgO的热稳定性(结构和磁化强度)以及电场对磁各向异性的控制。CFA/MgO界面的结构热稳定性的相图示出。Fe-O轨道杂化产生的界面磁各向异性提供了高的磁热稳定性和低的杂散场。我们发现电场通过巨大的磁电效应(各向异性能量系数β ~10-7 erg/V cm)对这种双晶各向异性产生巨大的改变。我们的自旋电子结构和非共线输运计算表明,高自旋极化的界面态和良好的磁电阻特性的CFA/MgO/CFA垂直磁性隧道结。

英文摘要:

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we investigate thermal stability (both structure and magnetization) and the electric field control of magnetic anisotropy on Co2FeAl (CFA)/MgO. A phase diagram of structural thermal stability of the CFA/MgO interface is illustrated. An interfacial perpendicular-anisotropy, coming from the Fe-O orbital hybridization, provides high magnetic thermal stability and a low stray field. We find an electric-field-induced giant modification of such perpendicular-anisotropy via a great magnetoelectric effect (the anisotropy energy coefficient beta~10-7 erg/V cm). Our spin electronic-structure and non-collinear transport calculations indicate high spin-polarized interfacial states and good magnetoresistance properties of CFA/MgO/CFA perpendicular magnetic tunnel junctions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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