硅和锗可能是固态器件技术以及最近的微加工和纳米技术背景下最广为人知的两种半导体材料。同时，这两种材料在红外镜头设计领域也有重要的应用。为这两种材料透射的波长范围设计的光学仪器在冷却至低温时实现最佳性能，以增强来自场景的信号超过仪器背景辐射。为了实现在低温下使用硅和锗的高质量透镜设计，我们使用NASA戈达德太空飞行中心的低温高精度折射测量系统（CHARMS）测量了这两种材料的多个棱镜的绝对折射率，作为波长和温度的函数。对于硅，我们报告的绝对折射率和热光系数（dn/dT）在温度范围从20至300 K，波长从1.1至5.6微米，而对于锗，我们覆盖的温度范围从20至300 K和波长从1.9至5.5微米。我们将我们的测量结果与文献中的其他测量结果进行比较，并根据我们的数据提供依赖于温度的Sellmeier系数，以便将指数精确插值到其他波长和温度。引用文献中这两种材料折射率的各种数值，我们重申，当绝对精度要求大于+/-5 x 10^-3时，测量来自同一批原材料的样品的折射率是非常重要的。
英文摘要：
Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important in the field of infrared lens design. Optical instruments designed for the wavelength range where these two materials are transmissive achieve best performance when cooled to cryogenic temperatures to enhance signal from the scene over instrument background radiation. In order to enable high quality lens designs using silicon and germanium at cryogenic temperatures, we have measured the absolute refractive index of multiple prisms of these two materials using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA Goddard Space Flight Center, as a function of both wavelength and temperature. For silicon, we report absolute refractive index and thermo-optic coefficient (dn/dT) at temperatures ranging from 20 to 300 K at wavelengths from 1.1 to 5.6 microns, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 microns. We compare our measurements with others in the literature and provide temperature-dependent Sellmeier coefficients based on our data to allow accurate interpolation of index to other wavelengths and temperatures. Citing the wide variety of values for the refractive indices of these two materials found in the literature, we reiterate the importance of measuring the refractive index of a sample from the same batch of raw material from which final optical components are cut when absolute accuracy greater than +/-5 x 10^-3 is desired.
Mid-infrared germanium-on-silicon waveguide sensor for therapeutic drug monitoring of phenytoin
Optoelectronics Research Centre, University of Southampton（南安普顿大学光电子研究中心）；Faculty of Medicine and Institute for Life Sciences, University of Southampton（南安普顿大学医学院与生命科学研究所）；NIHR Southampton Clinical Research Facility and Biomedical Research Centre, University Hospital Southampton NHS Foundation Trust（南安普顿大学医院NHS基金会信托下属NIHR南安普顿临床研究设施与生物医学研究中心）；School of Physics Engineering and Technology, University of York（约克大学物理工程与技术学院）
Broadband Chromatic Dispersion of Thermo-refractive Coefficients and its Impact in Silicon Nitride Nonlinear Photonics
Joint Quantum Institute, NIST/University of Maryland（联合量子研究所，美国国家标准与技术研究院/马里兰大学）；Microsystems and Nanotechnology Division, National Institute of Standards and Technology（微系统与纳米技术部，美国国家标准与技术研究院）
Thermally Induced Refractive Index Trimming of Visible-Light Silicon Nitride Waveguides Using Suspended Heaters
Max Planck Institute of Microstructure Physics（马克斯·普朗克微结构物理研究所）；University of Toronto（多伦多大学）；Advanced Micro Foundry Pte. Ltd.（先进微电子代工厂私人有限公司）；Xanadu（仙纳杜）；SCINTIL Photonics（辛提尔光子学）
Integrated Platform for Robust Differential Refractive Index Sensor
在这项工作中，我们展示了一个集成平台，包括基于光子分子（PM）的折射率（RI）传感器，该传感器使用差分测量方案有效地减轻了环境扰动的影响，同时提供高品质因数（Q）谐振。RI传感器包括一个暴露的微盘谐振器耦合到外部包层的硅绝缘体（SOI）平台上制造的微谐振器。我们报告了23 nm/RIU的RI灵敏度，实现了1.6 x 10-3折射率单位（RIU）的检测限（LOD），并在40 x 40 μm2的紧凑占地面积内提高了稳定性，代表了测量条件不易控制的实际应用的良好解决方案。
