用于硅兼容光电子学的拉伸应变绝缘体上锗衬底制备
Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics
摘要：
我们提出一种利用异质磊晶与层转移技术来制作拉伸应变绝缘体上锗（GOI）基板的方法。其目的是获得一种适合于硅兼容光电子器件制造的高质量晶圆级GOI平台。使用X射线衍射（XRD）和透射电子显微镜评估晶体质量。通过XRD验证了0.16%的双轴拉伸膜应变。通过制造和表征表现出超过1.55 μm光响应的金属-半导体-金属光电探测器，证明了器件制造的适用性。衬底制造工艺与互补金属氧化物半导体制造兼容，并且代表了硅兼容光电子学的晶片级集成的潜在途径。
英文摘要：
We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 μm. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.
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