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arXiv 1812.04498physics.opticsphysics.app-ph
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多量子阱等离子体锗/硅锗纳米激光器的设计与分析

Design and Analysis of a multiple quantum-well plasmonic Germanium/Silicon-Germanium nanolaser

Hamed Ghodsi, Hassan Kaatuzian

摘要:

在硅基激光器中使用锗有许多研究报道,但获得纳米激光器的这种潜力对于CMOS兼容等离子体源的开发也可能是重要的。介绍了一种Ge/SiGe多量子阱波导集成纳米激光器,并对其进行了理论研究。这种结构进行了模拟,并通过一个半经典速率方程模型,其性能进行了研究。所提出的纳米激光器具有0.07 μ m^2的微小基底面,室温性能和CMOS兼容的制造工艺。所提出的结构的输出性能估计,是值得注意的。这些模拟结果,与一些实验和冗余软件的双重检查,显示出可接受的兼容性。在1550 nm的输出波长下,注入电流为1uA时,输出功率为3.83uW,同时在24.5GHz的宽调制带宽下仍保持其性能。这种卓越的性能是由于珀塞尔因子等于2208而实现的。

英文摘要:

There are many researches reported in using Germanium in Silicon based lasers but acquiring this potential for a nanolaser may also be important for development of a CMOS compatible plasmon source. In this paper, a Ge/SiGe multiple quantum well waveguide integrated nanolaser is introduced and theoretically investigated. This structure is simulated and by means of a semi-classical rate equation model, its performance is studied. The proposed nano laser has a tiny footprint of 0.07um^2, room temperature performance and CMOS compatible fabrication process. The output performance of the proposed structure as estimated, is noticeable. These simulated results, compared with some experiments and redundant software double checking, show acceptable compatibility. In 1550nm output wavelength, it provides 3.83uW output power with 1uA injection current while maintaining its performance in a wide modulation bandwidth of 24.5GHz. This remarkable performance is achieved thanked to a Purcell factor equal to 2208.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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