This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $β$-particles ($^{90}$Sr). After \SI{2}{MGy} irradiation, the reverse leakage current remains at an ultralow level of $\sim 10^{-11}$ \si{A/cm^2} at \SI{-300}{V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \SI{~130}{V}. CCE for $β$-particles decreases by less than 5\%. The detector maintains good timing resolution: \SI{21}{ps} before and \SI{31}{ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring.
Stable Charge Collection and Sub-45 ps Time Resolution in a 4H-SiC PIN Detector Irradiated With Low Fluence 16.5 MeV/u Ta Ions
Institute of High Energy Physics, Chinese Academy of Sciences（中国科学院高能物理研究所）；Qufu Normal University（曲阜师范大学）；State Key Laboratory of Particle Detection and Electronics（粒子探测与电子学国家重点实验室）；Liaoning University（辽宁大学）
Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
Institute of Physics of the Czech Academy of Sciences（捷克科学院物理研究所）；onsemi（安森美）；Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague（布拉格捷克技术大学核科学与物理工程学院）
An active Transverse Energy Filter based on microstructured Si-PIN diodes with an angular-selective detection efficiency
University of Münster（明斯特大学）；Istituto Nazionale di Fisica Nucleare (INFN) – Sezione di Milano-Bicocca（意大利国家核物理研究所（INFN）米兰-比科卡分部）；Kirchhoff-Institute for Physics, University of Heidelberg（海德堡大学基希霍夫物理研究所）
4H-SiC PIN detector for alpha particles from room temperature to 90 °C
Institute of High Energy Physics, Chinese Academy of Sciences（中国科学院高能物理研究所）；Jilin University（吉林大学）；Shandong Institute of Advanced Technology（山东高等技术研究院）
Stability of Charge Collection Efficiency and Time Resolution in a Novel Ultra-fast Graphene-Optimized Silicon Carbide Detector Under X-ray Irradiation
Institute of High Energy Physics, Chinese Academy of Sciences（中国科学院高能物理研究所）；Liaoning University（辽宁大学）；Qufu Normal University（曲阜师范大学）；Jilin University（吉林大学）
Mortality of ultra-thin LGADs and PiN diodes from high energy deposition
Brookhaven National Laboratory（布鲁海文国家实验室）；Brown University（布朗大学）；Cheikh Anta Diop University（谢赫·安塔·迪奥普大学）；University of New Mexico（新墨西哥大学）；Stuyvesant High School（斯泰文森高中）
Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC p-i-n Detector
Institute of High Energy Physics, Chinese Academy of Sciences（中国科学院高能物理研究所）；Liaoning University（辽宁大学）；Jilin University（吉林大学）；Shandong Institute of Advanced Technology（山东高等技术研究院）
In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams
Marietta Blau Institute for Particle Physics, Austrian Academy of Sciences（玛丽塔·布劳粒子物理研究所，奥地利科学院）；Institute of Atomic and Subatomic Physics, TU Wien（维也纳工业大学原子与亚原子物理研究所）
Investigating ultra-thin 4H-SiC AC-LGADs for superior radiation-hard timing applications
School of Physical Sciences, Indian Institute of Technology, Mandi（印度技术学院曼迪分校物理科学学院）；National Institute of Science Education and Research（国家科学教育研究中心）；Homi Bhabha National Institute（霍米·巴巴国立研究所）；Centre for Medical and Radiation Physics, National Institute of Science Education and Research（国家科学教育研究中心医学与辐射物理中心）
Performance Characteristics of the Battery-Operated Si PIN Diode Detector with Integrated Preamplifier and Data Acquisition Module for Fusion Particle Detection
