具有碰撞电离增益的饱和超快传感器的信号发展
Signal Development for Saturated Ultrafast Sensors with Impact Ionization Gain
摘要：
一个封闭形式的近似表达式，提出了在高帧率检测入射X射线通量的背景下，在短的时间范围内的硅二极管传感器信号的发展，在X射线吸收曲线产生的电子-空穴对在检测器的体积均匀分布的限制。该表达式表示来自具有（LGAD）和不具有（PIN）增益的二极管传感器的信号的即时时间发展，并且呈现与增益开始相关联的时间尺度。讨论了在电子读出噪声存在的情况下限制检测帧速率的原则。利用元素模拟，LGAD与PIN二极管传感器的相对优势，探索作为有效的电子收集时间的函数。据发现，对于一个理想化的LGAD传感器的增益为30，由碰撞电离提供的增益产生的优势，相对于PIN二极管传感器的帧速率高达10 GHz。
英文摘要：
A closed-form approximate expression is presented for the short time-frame development of silicon diode sensor signals in the context of high frame-rate detection of incident X-ray fluxes, in the limit that the X-ray absorption profile generates a longitudinally-uniform distribution of electron-hole pairs in the detector bulk. The expression represents the immediate time development of signals from diode sensors both with (LGAD) and without (PIN) gain, and presents a temporal scale associated with the onset of gain. Principles limiting the detection frame rate in the presence of electronic readout noise are discussed. Making use of an elemental simulation, the relative advantage of LGAD vs. PIN diode sensors is explored as a function of the effective electronic collection time. It is found that for an idealized LGAD sensor with a gain of 30, the gain provided by impact ionization yields an advantage relative to PIN diode sensors for frame rates as high as 10 GHz.
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