266 nm超低后脉冲概率的自由运转4 H- SiC单光子探测器
Free-running 4H-SiC single-photon detector with ultralow afterpulse probability at 266 nm
摘要：
紫外单光子探测器（UVSPD）为需要探测波段内超微弱光的应用提供了一个重要工具。本文报道了一种基于4 H-SiC单光子雪崩二极管（SPAD）的超低后脉冲几率自激紫外探测器。设计并制作了具有超低暗电流特性的4 H-SiC斜台面SPAD。我们进一步发展了一个被动淬火和主动复位的读出电路，具有可调的保持时间设置，大大抑制了后脉冲效应。研究了直径为$\sim$ 180 $μ$ m的SPAD有源区上光子探测效率的不均匀性，以优化性能。紧凑的UVSPD的特点是，表现出典型的性能为10.3%PDE，133 kcps的暗计数率和0.3%的后脉冲概率在266 nm。这种性能表明，紧凑的UVSPD可以用于实际的紫外光子计数应用
英文摘要：
Ultraviolet single-photon detector (UVSPD) provides a key tool for the applications requiring ultraweak light detection in the wavelength band. Here, we report a 4H-SiC single-photon avalanche diode (SPAD) based free-running UVSPD with ultralow afterpulse probability. We design and fabricate the 4H-SiC SPAD with a beveled mesa structure, which exhibits the characteristic of ultralow dark current. We further develop a readout circuit of passive quenching and active reset with tunable hold-off time setting to considerably suppress the afterpulsing effect. The nonuniformity of photon detection efficiency (PDE) across the SPAD active area with a diameter of $\sim$ 180 $μ$m is investigated for performance optimization. The compact UVSPD is then characterized, exhibiting a typical performance of 10.3% PDE, 133 kcps dark count rate and 0.3% afterpulse probability at 266 nm. Such performance indicates that the compact UVSPD could be used for practical ultraviolet photon-counting applications
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