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arXiv 1202.0320physics.ins-detnucl-ex
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机械应力下TiN-coated单片硅PIN二极管阵列的性能

Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

B. A. VanDevender, L. I. Bodine, A. W. Myers, J. F. Amsbaugh, M. A. Howe, M. L. Leber, R. G. H. Robertson, K. Tolich, T. D. Van Wechel, B. L. Wall

摘要:

卡尔斯鲁厄氚中微子实验(KATRIN)将使用高度分段的单片硅pin二极管焦平面探测器(FPD)探测通过其电磁光谱仪的氚β衰变电子。该pin二极管阵列将位于一块500 μ m厚的硅上,氮化钛(TiN)涂层探测器像素与弹簧针制成的前端电子器件之间存在接触。弹簧针将在探测器上施加高达50 N的总作用力,使其变形,并在硅块中产生高达50 MPa的机械应力。我们已经评估了一个原型pin二极管阵列与弹簧针连接方案类似的KATRIN FPD。我们发现,弹簧针使良好的电接触TiN和观察检测器的分辨率或反向偏置漏电流,这可以归因于机械应力没有影响。

英文摘要:

The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium beta- decay electrons that pass through its electromagnetic spectrometer with a highly- segmented monolithic silicon pin-diode focal-plane detector (FPD). This pin-diode array will be on a single piece of 500-μm-thick silicon, with contact between titanium nitride (TiN) coated detector pixels and front-end electronics made by spring-loaded pogo pins. The pogo pins will exert a total force of up to 50N on the detector, deforming it and resulting in mechanical stress up to 50 MPa in the silicon bulk. We have evaluated a prototype pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We find that pogo pins make good electrical contact to TiN and observe no effects on detector resolution or reverse-bias leakage current which can be attributed to mechanical stress.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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