Atomic-Scale Quantum Control of Single Spin Defects in a Two-Dimensional Semiconductor
Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院）；Center for Integrated Quantum Science and Technology (IQST), Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院集成量子科学与技术中心）；II. Physikalisches Institut, Universität zu Köln（科隆大学第二物理研究所）；Institute for Quantum Materials and Technologies (IQMT), Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院量子材料与技术研究所）；Faculty of Information Technology and Electrical Engineering, University of Oulu（奥卢大学信息技术与电气工程学院）
Kwan Ho Au-Yeung, Wantong Huang, Johanna Matusche, Paul Greule, Jonas Arnold, Lovis Hardeweg, Máté Stark, Luise Renz, Affan Safeer, Daniel Jansen, Thomas Michel… 展开作者
Kwan Ho Au-Yeung, Wantong Huang, Johanna Matusche, Paul Greule, Jonas Arnold, Lovis Hardeweg, Máté Stark, Luise Renz, Affan Safeer, Daniel Jansen, Thomas Michely, Jeison Fischer, Wolfgang Wernsdorfer, Christoph Sürgers, Hannu-Pekka Komsa, Johannes Schwenk, Wouter Jolie, Philip Willke
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30 pages, 4 figures in the main text, 10 supplementary figures
Individual spin defects in solids are promising building blocks for quantum technologies, but their deterministic creation, individual addressability, and operation near surfaces remain major challenges. Two-dimensional materials provide an attractive alternative, as their single-layer thickness enables direct atomic-scale access to defect states. Here, we demonstrate single-spin control of solid-state defects in a two-dimensional semiconductor by a combination of scanning tunneling microscopy and electron spin resonance. We create and manipulate individual sulfur vacancies and carbon substitution defects in monolayer molybdenum disulfide and characterize their spin dynamics, including coherent control, at the single-defect level. Using atomic manipulation, we further engineer and probe spin-spin interactions between defect pairs. Our results demonstrate deterministic creation, addressability, coherent manipulation, and controlled coupling of individual spin defects within a single experimental platform. This establishes atomically engineered spin defects in two-dimensional semiconductors as a versatile class of controllable solid-state quantum systems and opens a route towards tailored quantum sensing experiments.
Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
Visualization of Defect Electronic States in Layered Semiconductor CrSBr
University of Ottawa（渥太华大学）；Radboud University（拉德堡德大学）；Argonne National Laboratory（阿贡国家实验室）；University of Chemistry and Technology Prague（布拉格化工大学）；Bielefeld University（比勒费尔德大学）；Center for Nanoscale Materials, Argonne National Laboratory（阿贡国家实验室纳米材料中心）；University of Illinois（伊利诺伊大学）
研究利用扫描隧道显微镜/光谱探索块状 CrSBr 中两个突出缺陷的结构和电子特征，通过与模拟图像比较，推断常见缺陷为 b 轴对齐的双硫空位，推进了对 CrSBr 本征缺陷塑造电子结构作用的理解。
Symmetry-forbidden intervalley scattering by atomic defects in monolayer transition-metal dichalcogenides
单层过渡金属二硫属化物（TDM; MX 2）中原子缺陷引起的谷间散射对利用其独特的谷对比特性的应用提出了严重的障碍。在这里，我们表明，原子缺陷的对称性可以引起一个非常规的保护机制，对单层TMD谷间散射。预测的谷间散射的缺陷相关选择规则可以经由傅里叶变换扫描隧道光谱（FT-STS）来验证，并且提供例如以下各项的唯一标识：原子空位缺陷（M vs X）。我们的研究结果把谷间FT-STS峰在最近的实验中的情况下，在一个不同的角度。
Impact of a topological defect and Rashba spin-orbit interaction on the thermo-magnetic and optical properties of a 2D semiconductor quantum dot with Gaussian confinement
