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arXiv 2101.07569cond-mat.mtrl-scicond-mat.mes-hall
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从原子水平探讨金属-半导体结导电性的起源

Into the Origin of Electrical Conductivity for the Metal-Semiconductor Junction at the Atomic Level

Arkadiusz Janas, Witold Piskorz, Aleksandr Kryshtal, Grzegorz Cempura, Wojciech Belza, Adam Kruk, Benedykt R. Jany, Franciszek Krok

摘要:

基于金属-半导体(M-S)结的器件通常用于各种电子器件中。它们的电性能由相对于所使用的半导体的金属相性质限定。在这里,我们做了一个深入调查的起源M-S结在原子尺度上通过研究的性质AuIn 2纳米电极形成在InP(001)表面上的原位电学测量结合详细的调查原子分辨结构的支持下,其局部电学性质的第一性原理计算。我们发现,同一金属相相对于半导体结构的不同晶向通过金属费米能级的细微变化和影响界面处带边的移动,强烈地影响M-S结的整流特性。这最终改变了欧姆型和肖特基型之间的导电性状态。在设计基于M-S结的电子器件时,必须考虑晶体取向的影响。

英文摘要:

The metal-semiconductor (M-S) junction based devices are commonly used in all sorts of electronic devices. Their electrical properties are defined by the metallic phase properties with a respect to the semiconductor used. Here we make an in-depth survey on the origin of the M-S junction at the atomic scale by studying the properties of the AuIn2 nanoelectrodes formed on the InP(001) surface by the in situ electrical measurements in combination with a detailed investigation of atomically resolved structure supported by the first-principle calculations of its local electrical properties. We have found that a different crystallographic orientation of the same metallic phase with a respect to the semiconductor structure influences strongly the M-S junction rectifying properties by subtle change of the metal Fermi level and influencing the band edge moving at the interface. This ultimately changes conductivity regime between Ohmic and Schottky type. The effect of crystallographic orientation has to be taken into account in the engineering of the M-S junction-based electronic devices.

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