W-based granular metals have been prepared by electron beam induced deposition from the tungsten-hexacarbonyl W(CO)6 precursor. In situ electrical conductivity measurements have been performed to monitor the growth process and to investigate the behavior of the deposit under electron beam post irradiation and by exposure to air. During the first part of the growth process, the electrical conductivity grows non-linearly, independent of the electron beam parameters. This behavior is interpreted as the result of the increase of the W-particles diameter. Once the growth process is terminated, the electrical conductivity decreases with the logarithm of time, sigma ln(t). Temperature-dependent conductivity measurements of the deposits reveal that the electrical transport takes place by means of electron tunneling either between W-metal grains or between grains and trap sites in the matrix. After venting the electron microscope the electrical conductivity of the deposits shows a degradation behavior, which depends on the composition. Electron post-irradiation increases the electrical conductivity of the deposits.
Highly conducting $SnO_{2}$ thin films were prepared by chemical spray pyrolysis technique. One set of as-deposited films were annealed in air for 2 h at 850$^{o}$C. These as-deposited and annealed films were irradiated using $Au^{9+}$ ions with energy of 120 MeV at different fluences ranging from $1\times10^{11}$ to $3\times10^{13}$ $ions/cm^{2}$. Electrical measurement shows that as-deposited $SnO_{2}$ films are in conducting state with n = $3.164 \times 10^{20}$ $cm^{-3}$ and annealed $SnO_{2}$ films are in insulating state. The amorphized latent tracks are created only above a certain thre…
Focused electron beam induced deposition (FEBID) is a powerful technique for 3D-printing of complex nanodevices. However, for resolutions below 10 nm, it struggles to control size, morphology and composition of the structures, due to a lack of molecular-level understanding of the underlying irradiation-driven chemistry (IDC). Computational modelling is a tool to comprehend and further optimise FEBID-related technologies. Here we utilise a novel multiscale methodology which couples Monte Carlo simulations for radiation transport with irradiation-driven molecular dynamics for simulating IDC with…
This paper addresses issues related to cracking and blisters in deposited films encountered in a lift-off process with electron beam evaporation and a bilayer PMMA resist system. The impact of charged particles, i.e. electrons and ions, is investigated using an electron beam evaporation chamber equipped with ring-magnets and a plate electrode placed in front of the sample. By replacing the plate electrode with a hollow cylinder, the modified evaporation setup utilizing passive components allows a complete elimination of resist shrinkage and blistering yielding near perfect deposition results f…
Combining spatially resolved X-ray Laue diffraction with atomic-scale simulations, we observe how ion-irradiated tungsten undergoes a series of non-linear structural transformations with increasing irradiation exposure. Nanoscale defect-induced deformations accumulating above 0.02 displacements per atom (dpa) lead to highly fluctuating strains at ~0.1 dpa, collapsing into a driven quasi-steady structural state above ~1 dpa. The driven asymptotic state is characterized by finely dispersed vacancy defects coexisting with an extended dislocation network, and exhibits positive volumetric swelling …
Bleaching of optical activity induced by UV Laser exposure in natural silica
我们报告的实验数据上的两种类型的天然二氧化硅，不同的OH含量，照射紫外光子（4.66 eV）从脉冲Nd：YAG激光。辐照引起5.12eV处的吸收带和3.14eV和4.28eV处的相关发射的减少，归因于在我们的样品中预先存在的双重配位Ge（= Ge "）中心。漂白主要是由于= Ge "通过捕获H原子而在辐照后转化为顺磁性H（II）中心。与文献数据的比较指出了与低Ge浓度的二氧化硅的特性，关于UV诱导的转换。
Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount of energy that remains the graphene after the ion impact. Electrons can either be emitted (kinetic energy transfer) or captured by the passing ion (potential energy transfer). To elucidate this behavior that is absent in three-dimensional materials, we simulate the electron dynamics in graphene during the first femtoseconds after ion impact. We employ two c…
In the majority of cases nanostructures prepared by focused electron beam induced deposition (FEBID) employing an organometallic precursor contain predominantly carbon-based ligand dissociation products. This is unfortunate with regard to using this high-resolution direct-write approach for the preparation of nanostructures for various fields, such as mesoscopic physics, micromagnetism, electronic correlations, spin-dependent transport and numerous applications. Here we present an in-situ cleaning approach to obtain pure Co-FEBID nanostructures. The purification procedure lies in the exposure …
CVD grown graphene used in (scanning) transmission electron microscopy ((S)TEM) studies must undergo a careful transfer of the one-atom-thick membrane from the growth surface (typically a Cu foil) to the TEM grid. During this transfer process, the graphene invariably becomes contaminated with foreign material. This contamination proves to be very problematic in the (S)TEM because often >95% of the graphene is obscured and imaging of the pristine areas results in e-beam-induced hydrocarbon deposition which further acts to obscure the desired imaging area. In this article, we examine two cleanin…
Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high purity multilayers, isotopically pure hBN, carbon rich hBN multilayers and monolayered material - and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain bou…
Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO)5, and neopentasilane, Si5H12 as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way we are able to fabricate FeSi and Fe3Si binary compounds from [Fe=Si]2 and [Fe3=Si]2 multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured …
As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called 'nonthermal melting' if the density of electrons excited from the valence to the conduction band overcomes a certain critical value. Such ultrafast transition is induced by strong changes in the atomic potential energy surface, which trigger atomic relocation. However, heating of a material due to the electron-phonon coupling can also lead to a phase transition, called 'thermal melting'. This thermal melting can occur even if the excited-electron density is much too low to induc…
The degree of laser-induced graphitisation from a sp3-bonded to a sp2-bonded carbon fraction in a single crystal chemical vapour deposited (CVD) diamond under a varying fluence of an ultrashort pulsed laser (30 fs, 800 nm, 1 kHz) irradiation has been studied. The tetrahedral CVD sp3-phase was found to transition to primarily an sp2-aromatic crystalline graphitic fraction below the critical fluence of 3.9 J/cm2, above which predominantly an amorphous carbon was formed. A fractional increase of fluence from 3.3 J/cm2 to 3.9 J/cm2 (~ 20 %) resulted in a substantial (~ three-fold) increased depth …
Graphene oxide (GO) is a nanofilm composed of graphene with various oxygen functional groups attached. GO is of interest due to its unique mechanical-enhancement properties, its tunable electronic properties, and its potential use in the wide-scale production of graphene. Scanning electron microscopes (SEMs) are frequently used to characterize and study GO films. The purpose of this project was to study the effects of SEM-imaging on GO films. Using an SEM, we irradiated GO samples at electron beam-energies of 10, 20, and 30 keV (at a constant emission current of ~40 micro-amps) for times rangi…
Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often results from the exposure to the ion beam, motivating the search for a means to achieve similar structures with a beam of electrons instead of ions. This has so far remained an experimental challenge. We report the fabrication of superconducting tungsten nanowires by electron-beam-induced-deposition, with critical temperature of 2.0 K and critical magnetic field of 3.7 T, and compare them with superconducting wires made w…
