AI 中文总结
研究利用扫描隧道显微镜/光谱探索块状 CrSBr 中两个突出缺陷的结构和电子特征，通过与模拟图像比较，推断常见缺陷为 b 轴对齐的双硫空位，推进了对 CrSBr 本征缺陷塑造电子结构作用的理解。
AI 中文摘要
硫化铬溴（CrSBr）是一种层状磁性半导体材料，具有丰富的磁相图以及与轴相关的电子和光学特性。虽然已表明 CrSBr 中的缺陷会影响磁序和激子响应，但其微观性质、原子结构和电子特性尚未完全了解。在这项工作中，我们使用扫描隧道显微镜/光谱（STM/STS）来探索块状 CrSBr 中两个突出缺陷的结构和电子特征。它们的结构反映了底层晶格的对称性，在价带边缘附近有电子特征。通过将实验数据与从头算模拟的 STM 图像进行比较，我们推断一个常见缺陷对应于 b 轴对齐的双硫空位，这与最近的生长分析研究结果一致。该结果推进了我们对本征缺陷在塑造 CrSBr 电子结构中作用的理解。
英文摘要
Chromium sulfur bromide (CrSBr) is a layered magnetic semiconducting material combining a rich magnetic phase diagram with axis-dependent electronic and optical properties. While defects in CrSBr have been shown to affect magnetic order and excitonic responses, their microscopic nature, atomic structure, and electronic properties are not yet fully understood. In this work, we use scanning tunneling microscopy/spectroscopy (STM/STS) to explore the structure and electronic signatures of two prominent defects in bulk CrSBr. Their structure reflects the symmetries of the underlying lattice, with electronic features near the valence band edge. By comparing experimental data with ab initio simulated STM images, we infer that a common defect corresponds to a b-axis-aligned double sulfur vacancy, in line with findings from a recent growth analysis study. This result advances our understanding of the role of intrinsic defects in shaping the electronic structure of CrSBr.
