薄膜铌酸锂（TFLN）已发展为多功能声学和光子器件平台，应用于经典信号处理到量子技术。然而，声学损耗从根本上限制了TFLN平台上的声学器件性能，其物理起源尚不明确。本文系统研究了不同TFLN平台（如绝缘体上的铌酸锂、蓝宝石上的铌酸锂、悬吊薄 film 和 bulk LN）在4 K至室温以上的GHz频率下的声学传播损耗。使用延迟线方法，提取了Rayleigh、剪切横向和 Lamb 模式的频率和温度依赖性损耗。在LNOI中观察到异常的非单调温度依赖性，类似于非晶材料的声学损耗，表明低温下埋藏氧化层主导损耗。在较高温度下，损耗收敛于由声子-声子相互作用主导的Akhiezer阻尼。高分辨率电子显微镜进一步揭示了纳米尺度的界面晶体杂质，可能对TFLN平台的声学损耗增加有贡献。这些结果阐明了TFLN中的声学损耗机制，并为设计低损耗声学器件提供了指导。
英文摘要：
Thin-film lithium niobate (TFLN) has emerged as a versatile platform for phononic and photonic devices with applications ranging from classical signal processing to quantum technologies. However, acoustic loss fundamentally limits the performance of acoustic devices on TFLN platforms, yet its physical origin remains insufficiently understood. Here, we systematically investigate acoustic propagation loss in various TFLN platforms, including lithium niobate on insulator (LNOI), lithium niobate on sapphire (LNOS), suspended LN thin films, and bulk LN at gigahertz frequencies over temperatures ranging from 4 K to above room temperature. Using a delay-line method, we extract frequency- and temperature-dependent losses for Rayleigh, shear-horizontal, and Lamb modes. We observe an anomalous non-monotonic temperature dependence in LNOI that closely resembles acoustic loss in amorphous materials, indicating a dominant loss channel associated with the buried oxide layer at low temperatures. At elevated temperatures, the loss converges to the Akhiezer damping governed by phonon-phonon interactions. High-resolution electron microscopy further reveals nanoscale interfacial crystal impurities that may contribute to the increased acoustic loss in TFLN platforms relative to bulk LN. These results elucidate the acoustic loss mechanisms in TFLN and provide guidelines for designing low-loss acoustic devices.
Surface acoustic wave (SAW) devices have wide range of applications in microwave signal processing. Microwave SAW components benefit from higher quality factors and much smaller crosstalk when compared to their electromagnetic counterparts. Efficient routing and modulation of SAWs are essential for building large-scale and versatile acoustic-wave circuits. Here, we demonstrate integrated thermo-acoustic modulators using two SAW platforms: bulk lithium niobate and thin-film lithium niobate on sapphire. In both approaches, the gigahertz-frequency SAWs are routed by integrated acoustic waveguides…
We reported on a graphical domain engineering technique with the capability to fabricate macroscale domain structures with nanoscale spatial resolution in non-polar-cut lithium niobate thin film on insulators through the biased probe tip of scanning atomic force microscopy. It was found that the domain writing process is asymmetric with respect to the spontaneous polarization Ps even though the tip-induced poling field is mirror-symmetric. Various domain structures, with a dimension larger than millimeters while consisting of nanoscale domain elements and with arbitrary domain-wall inclination…
The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demon…
We experimentally demonstrate a room-temperature, voltage controlled, short-term quantum photonics memory on a lithium niobate chip. Our chip is capable of resolving 100 ps time steps with 0.74 dB loss per round-trip.
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a narrow-band laser working at 974 nm in erbium-doped lithium niobate microdisk cavity with threshold down to 400 μW and a conversion efficiency of 3.1{\times}10^{-4} %, laying the foundation for the LNOI integrated light source research.
We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium ni…
Lithium niobate on insulator emerges as a promising platform for integrated microwave photonics because of its capability of ultralow-loss guidance and high-efficiency modulation of light. Chip-level integration of microwave filters is important for signal processing in the 5G/6G wireless communication. Here, we employed the principle of bound states in the continuum for low-loss waveguiding on an etchless lithium niobate integrated platform, and realized high-performance microwave photonic filters thereon. These microwave photonic filters consist of a high-quality photonic microcavity modulat…
Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical amplifiers and lasing has been investigated a lot. We investigate the erbium-doped lithium niobate on insulator (LNOI). Here, spiral waveguide amplifiers were fabricated on a 1-mol\% erbium-doped LNOI by CMOS-compatible technique. We demonstrated a maximum internal net gain of 8.3 dB at 1530 nm indicating a net gain per unit length of 15.6 dB/cm with a compact …
We experimentally demonstrate a visible light thin-film lithium niobate modulator at 532 nm. The waveguides feature a propagation loss of 2.2 dB/mm while a grating for fiber interface has a coupling loss of 5 dB. Our demonstrated modulator represents a low voltage-length product of 1.1 V*cm and a large bandwidth beyond 30 GHz.
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
Lithium niobate (LN) is an excellent nonlinear optical and electro-optic material that has found many applications in classical nonlinear optics, optical fiber communications and quantum photonics. Here we review the recent development of thin-film LN technology that has allowed the miniaturization of LN photonic devices and microcavities with ultrahigh quality factors. We discuss the design principle of LN devices that makes use of the largest nonlinear coefficients, various device fabrication approaches and resulting device performances, and the current and potential applications of LN micro…
Lithium niobate on insulator (LNOI) is an emerging photonic platform with great promises for future optical communications, nonlinear optics and microwave photonics. An important integrated photonic building block, active waveguide amplifiers, however, is still missing in the LNOI platform. Here we report an efficient and compact waveguide amplifier based on erbium-doped LNOI waveguides, realized by a sequence of erbium-doped crystal growth, ion slicing and lithography-based waveguide fabrication. Using a compact 5-mm-long waveguide, we demonstrate on-chip net gain of > 5 dB for 1530-nm signal…
We demonstrate ultra-high Q factor microring resonators close to the intrinsic material absorption limit on lithium niobate on insulator. The microrings are fabricated on pristine lithium niobate (LN) thin film wafer thinned from LN bulk via chemo-mechanical etching without ion slicing and ion etching. A record-high Q factor up to times ten to the power of 8th at the wavelength of 1550 nm is achieved because of the ultra-smooth interface of the microrings and the absence of ion induced lattice damage, indicating an ultra-low waveguide propagation loss of about 0.28 dB per meter. The ultra-high…
The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip LNOI-based optical devices with high performance has been realized in recent years. Here we developed 1 mol\% erbium-doped LN crystal and its LNOI wafer, and fabricated an erbium-doped LNOI microdisk with high quality ($ \sim $ 1.05$\times 10^{^5}$ ). C-band laser emission with $ \sim $1530 nm and $ \sim $1560 nm from the high-Q erbium-doped LNOI microdisk w…
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
Materials with strong $χ^{(2)}$ optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss $χ^{(2)}$ materials remains challenging and limits the threshold power of on-chip $χ^{(2)}$ OPO. Here we report the first on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase matched, high-quality microring resonator, whose threshold power ($\sim$30 $μ$W) is 400 times lower than that in previous $χ^{(2)}$ integrated photonics platforms. An on-chip powe…
We demonstrate a C-band wavelength-tunable microlaser with an Er3+ doped high quality (~1.02x10^6) lithium niobate microdisk resonator. With a 976 nm continuous-wave pump laser, lasing action can be observed at a pump power threshold as low as ~250 μW at room temperature. Furthermore, the microdisk laser wavelength can be tuned by varying the pump laser power, showing a tuning efficiency of ~-17.03 pm/mW at low pump power blow 13 mW, and 10.58 pm/mW at high pump power above 13 mW.
Erbium-doped lithium niobate on insulator (Er:LNOI) has attracted enormous interest as it provides gain and enables integrated amplifiers and lasers on the lithium niobate on insulator (LNOI) platform. We demonstrate a highly efficient waveguide amplifier on Er:LNOI. The 2.58-cm long amplifier can achieve 27.94 dB signal enhancement, 16.0 dB internal net gain (6.20 dB/cm), -8.84 dBm saturation power, 4.59 dB/mW power conversion efficiency, and 4.49 dB noise figure at 1531.6 nm. Besides, thorough investigation on the pumping wavelength, pumping scheme, output power and noise figure have been pe…
Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with…
We overcome the difficulty in realizing a monolithic waveguide-coupled microring laser integrated on erbium-doped thin film lithium niobate (Er: TFLN) using photolithography assisted chemo-mechanical etching (PLACE) technique. We demonstrate an integrated single-frequency microring laser operating around 1531 nm wavelength. The PLACE technique, enabling integrated Er: TFLN photonics with low propagation loss, can thus be used to realize low cost mass production of monolithic on-chip microlasers with applications ranging from optical communication and photonic integrated circuit (PIC) to precis…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications ranging from 5G telecommunication and microwave photonics to microwave-to-optical quantum interfaces. Lithium niobate integrated photonic circuits could equally be the basis of integrated narrow-linewidth frequency-agile lasers. Pioneering work on polished lithium niobate crystal resonators has led to the development of electrically tunable narrow-linewidth las…
Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.
Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity, low driving voltage and lowpropagation loss. However, fully integrated system requires integration of high power, low noise, and narrow linewidth lasers on TFLN chip. Here we achieve this goal, and demonstrate integrated high-power lasers on TFLN platform with up to 60 mW of optical power in the waveguides. We use this platform to realize a highpower transmit…
We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.
