arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2202.11548physics.opticsphysics.app-ph
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片上集成Yb3 +掺杂薄膜锂晶体管波导放大器

On-chip integrated Yb3+-doped waveguide amplifiers on thin film lithium niobate

Zhihao Zhang, Zhiwei Fang, Junxia Zhou, Youting Liang, Yuan Zhou, Zhe Wang, Jian Liu, Ting Huang, Rui Bao, Jianping Yu, Haisu Zhang, Min Wang, Ya Cheng

摘要:

本文报道了用光刻辅助化学机械腐蚀法在锂酸盐薄膜上制备掺Yb ~(3+)光波导放大器(YDWA)及其光学特性。所制备的掺Yb 3+的LiNbO 3光波导在1030 nm和1060 nm处的传输损耗分别为0.13 dB/cm和0.1 dB/cm。在976 nm激光二极管泵浦的4.0cm长波导上,测得1030 nm和1060 nm处的内净增益分别为5dB和8dB,表明1030 nm和1060 nm处的单位长度增益分别为1.25dB/cm和2dB/cm。这种集成化的掺Yb 3+锂光波导放大器将有助于开发一个强大的增益平台,并有望为薄膜锂基光子芯片的高密度集成做出贡献。

英文摘要:

We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip.

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