We successfully demonstrate a monolithic integrated dual-polarization (DP) IQ modulator based on thin-film lithium niobate (TFLN) platform with a silicon substrate, which consists of IQ modulators, spot-size converters (SSCs) and a polarization rotator combiner (PRC). After coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.
We experimentally demonstrate a visible light thin-film lithium niobate modulator at 532 nm. The waveguides feature a propagation loss of 2.2 dB/mm while a grating for fiber interface has a coupling loss of 5 dB. Our demonstrated modulator represents a low voltage-length product of 1.1 V*cm and a large bandwidth beyond 30 GHz.
Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with…
The lithium niobate integrated photonic platform has recently shown great promise in nonlinear optics on a chip scale. Here, we report second-harmonic generation in a high-Q lithium niobate microring resonator through modal phase matching, with a conversion efficiency of 1,500% W$^{-1}$. Our device also allows us to observe difference-frequency generation in the telecom band. Our work demonstrates the great potential of the lithium niobate integrated platform for nonlinear wavelength conversion with high efficiencies.
Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.
Lithium niobate is an excellent photonic material with large $χ^2$ and $χ^3$ nonlinearities. Recent breakthroughs in nanofabrication technology have enabled ultralow-loss nanophotonic devices based on a lithium-niobate-on-insulator (LNOI) platform. Here we present an overview of recent developments in the LNOI platform for on-chip optical frequency comb generation. These devices could lead to new opportunities for integrated nonlinear photonic devices for classical and quantum photonic applications.
Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here we demonstrate an integrated phase modulator, based on a thin-film lithium niobate platform, that simultaneously features small on-chip loss (~ 1 dB) and low half-wave voltage over a large spectral range (3.5 - 4.5 V at 5 - 40 GHz). By driving the modulator with a strong 30-GHz microwave signal corresponding to around four half-wave voltages, we generate an…
We demonstrate integration of an amorphous silicon photodetector with thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration and experimental characterization of this metal-semiconductor-metal photodetector that features responsivity of 22 mA/W to 37mA/W over the wide optical bandwidth spanning 635 nm to 850 nm wavelengths range.
We report on fabrication of crystalline lithium niobate microresonators with quality factors above 10^7 as measured around 770 nm wavelength. Our technique relies on femtosecond laser micromachining for patterning a mask coated on the lithium niobate on insulate (LNOI) into a microdisk, followed by a chemo-mechanical polishing process for transferring the disk-shaped pattern to the LNOI. Nonlinear processes including second harmonic generation and Raman scattering have been demonstrated in the fabricated microdisk.
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a narrow-band laser working at 974 nm in erbium-doped lithium niobate microdisk cavity with threshold down to 400 μW and a conversion efficiency of 3.1{\times}10^{-4} %, laying the foundation for the LNOI integrated light source research.
We demonstrate acousto-optic phase modulators in X-cut lithium niobate films on sapphire, detailing the dependence of the piezoelectric and optomechanical coupling coefficients on the crystal orientation. This new platform supports highly confined, strongly piezoelectric mechanical waves without suspensions, making it a promising candidate for broadband and efficient integrated acousto-optic devices, circuits, and systems.
We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium ni…
Lithium niobate on insulator emerges as a promising platform for integrated microwave photonics because of its capability of ultralow-loss guidance and high-efficiency modulation of light. Chip-level integration of microwave filters is important for signal processing in the 5G/6G wireless communication. Here, we employed the principle of bound states in the continuum for low-loss waveguiding on an etchless lithium niobate integrated platform, and realized high-performance microwave photonic filters thereon. These microwave photonic filters consist of a high-quality photonic microcavity modulat…
Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical amplifiers and lasing has been investigated a lot. We investigate the erbium-doped lithium niobate on insulator (LNOI). Here, spiral waveguide amplifiers were fabricated on a 1-mol\% erbium-doped LNOI by CMOS-compatible technique. We demonstrated a maximum internal net gain of 8.3 dB at 1530 nm indicating a net gain per unit length of 15.6 dB/cm with a compact …
Segmented, or slow-wave electrodes have emerged as an index-matching solution to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the thin-film lithium niobate on insulator platform. However, these devices require the use of a quartz handle or substrate removal, adding cost and additional processing. In this work, a high-speed dual-output electro-optic intensity modulator in the thin-film silicon nitride and lithium niobate material system that uses segmented electrodes for RF and optical index matching is presented. The device uses a silicon handle and does not require…
We report fabrication of low loss single mode waveguides on lithium niobate on insulator (LNOI) cladded by a layer of SiO2. Our technique, termed photolithography assisted chemo-mechanical etching (PLACE), relies on patterning of a chromium film into the mask shape by femtosecond laser micromachining and subsequent chemo-mechanical etching of the lithium niobate thin film. The high-index-contrast single mode waveguide is measured to have a propagation loss of 0.13 dB/cm. Furthermore, waveguide tapers are fabricated for boosting the coupling efficiency.
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a single silicon lithography step and a single bonding step, we realize MZ EOM devices which cover both wavelength ranges on the same chip. The EOM devices achieve 100 GHz EO bandwidth (referenced to 1 GHz) and about 2-3 V…
We report fabrication of a multifunctional photonic integrated chip on lithium niobate on insulate (LNOI), which is achieved by femtosecond laser assisted chemo-mechanical polish. We demonstrate a high extinction ratio beam splitter, a 1 * 6 optical switch, and a balanced 3 * 3 interferometer on the fabricated chip by reconfiguring the microelectrode array integrated with the multifunctional photonic circuit.
We demonstrate fabrication of a high quality factor lithium niobate double-disk whispering-gallery microcavity using femtosecond laser assisted ion beam milling. Using this method, two vertically stacked 30-um-diameter disks with a 200-nm-gap are fabricated. With our device, an optical quality factor as high as 1.2*10^5 is demonstrated. Our approach is scalable to fabricate multiple disks on a single chip.
A lithium niobate on insulator ridge waveguide allows constructing high-density photonic integrated circuits thanks to its small bending radius offered by the high index contrast. Meanwhile, the significant mode-field mismatch between an optical fiber and the single-mode lithium niobate waveguide leads to low coupling efficiencies. Here, we demonstrate, both numerically and experimentally, that the problem can be solved with a tapered single mode fiber of an optimized mode field profile. Numerical simulation shows that the minimum coupling losses for the TE and TM mode are 0.32 dB and 0.86 dB,…
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
Integrated lithium niobate (LN) photonics is a promising platform for future chip-scale microwave photonics systems owing to its unique electro-optic properties, low optical loss and excellent scalability. A key enabler for such systems is a highly linear electro-optic modulator that could faithfully covert analog electrical signals into optical signals. In this work, we demonstrate a monolithic integrated LN modulator with an ultrahigh spurious-free dynamic range (SFDR) of 120.04 dB Hz4/5 at 1 GHz, using a ring-assisted Mach-Zehnder interferometer configuration. The excellent synergy between …
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in th…
Lithium niobate (LN) is an excellent nonlinear optical and electro-optic material that has found many applications in classical nonlinear optics, optical fiber communications and quantum photonics. Here we review the recent development of thin-film LN technology that has allowed the miniaturization of LN photonic devices and microcavities with ultrahigh quality factors. We discuss the design principle of LN devices that makes use of the largest nonlinear coefficients, various device fabrication approaches and resulting device performances, and the current and potential applications of LN micro…
We demonstrate fabrication of single-mode optical waveguides on lithium niobate on insulator (LNOI) by optical patterning combined with chemo-mechanical polishing. The fabricated LNOI waveguides have a nearly symmetric mode profile of a mode field size of ~2.5 micron (full-width at half maximum). We develop a high-precision measurement approach by which the single mode waveguides are characterized to have a propagation loss of ~0.042 dB/cm.
Lithium niobate on insulator (LNOI) is an emerging photonic platform with great promises for future optical communications, nonlinear optics and microwave photonics. An important integrated photonic building block, active waveguide amplifiers, however, is still missing in the LNOI platform. Here we report an efficient and compact waveguide amplifier based on erbium-doped LNOI waveguides, realized by a sequence of erbium-doped crystal growth, ion slicing and lithography-based waveguide fabrication. Using a compact 5-mm-long waveguide, we demonstrate on-chip net gain of > 5 dB for 1530-nm signal…
We demonstrate ultra-high Q factor microring resonators close to the intrinsic material absorption limit on lithium niobate on insulator. The microrings are fabricated on pristine lithium niobate (LN) thin film wafer thinned from LN bulk via chemo-mechanical etching without ion slicing and ion etching. A record-high Q factor up to times ten to the power of 8th at the wavelength of 1550 nm is achieved because of the ultra-smooth interface of the microrings and the absence of ion induced lattice damage, indicating an ultra-low waveguide propagation loss of about 0.28 dB per meter. The ultra-high…
The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip LNOI-based optical devices with high performance has been realized in recent years. Here we developed 1 mol\% erbium-doped LN crystal and its LNOI wafer, and fabricated an erbium-doped LNOI microdisk with high quality ($ \sim $ 1.05$\times 10^{^5}$ ). C-band laser emission with $ \sim $1530 nm and $ \sim $1560 nm from the high-Q erbium-doped LNOI microdisk w…
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
We propose and demonstrate a polarization-insensitive and high speed optical switch unit based on a silicon and lithium niobate hybrid integration platform. The presented device exhibits a sub nano-second switching time, low drive voltages of 4.97 V, and low power dissipation due to electrostatic operation. The measured polarization dependence loss was lower than 0.8 dB. The demonstrated optical switch could provide as a building block for polarization-insensitive and high-speed optical matrix switches.
Materials with strong $χ^{(2)}$ optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss $χ^{(2)}$ materials remains challenging and limits the threshold power of on-chip $χ^{(2)}$ OPO. Here we report the first on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase matched, high-quality microring resonator, whose threshold power ($\sim$30 $μ$W) is 400 times lower than that in previous $χ^{(2)}$ integrated photonics platforms. An on-chip powe…
We demonstrate a C-band wavelength-tunable microlaser with an Er3+ doped high quality (~1.02x10^6) lithium niobate microdisk resonator. With a 976 nm continuous-wave pump laser, lasing action can be observed at a pump power threshold as low as ~250 μW at room temperature. Furthermore, the microdisk laser wavelength can be tuned by varying the pump laser power, showing a tuning efficiency of ~-17.03 pm/mW at low pump power blow 13 mW, and 10.58 pm/mW at high pump power above 13 mW.
Erbium-doped lithium niobate on insulator (Er:LNOI) has attracted enormous interest as it provides gain and enables integrated amplifiers and lasers on the lithium niobate on insulator (LNOI) platform. We demonstrate a highly efficient waveguide amplifier on Er:LNOI. The 2.58-cm long amplifier can achieve 27.94 dB signal enhancement, 16.0 dB internal net gain (6.20 dB/cm), -8.84 dBm saturation power, 4.59 dB/mW power conversion efficiency, and 4.49 dB noise figure at 1531.6 nm. Besides, thorough investigation on the pumping wavelength, pumping scheme, output power and noise figure have been pe…
A low voltage, wide bandwidth compact electro-optic modulator is a key building block in the realization of tomorrow's communication and networking needs. Recent advances in the fabrication and application of thin-film lithium niobate, and its integration with photonic integrated circuits based in silicon make it an ideal platform for such a device. In this work, a high-extinction dual-output folded electro-optic Mach Zehnder modulator in the silicon nitride and thin-film lithium niobate material system is presented. This modulator has an interaction region length of 11 mm and a physical lengt…
We demonstrate efficient tuning of a monolithically integrated lithium niobate microdisk (LN) optical frequency microcomb. Utilizing the high optical quality (Q) factor (i.e., Q~7.1*10^6) of the microdisk, the microcomb spans over a spectral bandwidth of ~200 nm at a pump power as low as 20.4 mW. Combining the large eletro-optic coefficient of LN and optimum design of the geometry of microelectrodes, we demonstrate electro-optical tuning of the comb with a spectral range of 400 pm and a tuning efficiency of ~38 pm/100V.
We propose and demonstrate a hybrid silicon and lithium niobate Michelson Interferometer Modulator (MIM) with enhanced modulation efficiency compared to a Mach-Zehnder modulator. The modulator is based on seamless integration of a high-contrast waveguide based on lithium niobate-a popular modulator material-with compact, low-loss silicon circuitry. The present device demonstrates a modulation efficiency as high as 1.2 Vcm and a low insertion loss of 3.3 dB. The 3dB electro-optic bandwidth is approximately 17.5 GHz. The optical eye diagrams, operating at 32 Gbit/s and 40 Gbit/s, with measured d…
We overcome the difficulty in realizing a monolithic waveguide-coupled microring laser integrated on erbium-doped thin film lithium niobate (Er: TFLN) using photolithography assisted chemo-mechanical etching (PLACE) technique. We demonstrate an integrated single-frequency microring laser operating around 1531 nm wavelength. The PLACE technique, enabling integrated Er: TFLN photonics with low propagation loss, can thus be used to realize low cost mass production of monolithic on-chip microlasers with applications ranging from optical communication and photonic integrated circuit (PIC) to precis…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications ranging from 5G telecommunication and microwave photonics to microwave-to-optical quantum interfaces. Lithium niobate integrated photonic circuits could equally be the basis of integrated narrow-linewidth frequency-agile lasers. Pioneering work on polished lithium niobate crystal resonators has led to the development of electrically tunable narrow-linewidth las…
Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity, low driving voltage and lowpropagation loss. However, fully integrated system requires integration of high power, low noise, and narrow linewidth lasers on TFLN chip. Here we achieve this goal, and demonstrate integrated high-power lasers on TFLN platform with up to 60 mW of optical power in the waveguides. We use this platform to realize a highpower transmit…
We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.
As an active material with favorable linear and nonlinear optical properties, thin-film lithium niobate has demonstrated its potential in integrated photonics. Integration with rare-earth ions, which are promising candidates for quantum memories and transducers, will enrich the system with new applications in quantum information processing. Here, we investigate the optical properties at 1.5 micron wavelengths of rare-earth ions (Er$^{3+}$) implanted in thin-film lithium niobate waveguides and micro-ring resonators. Optical quality factors near a million after post annealing show that ion impla…
Lithium-Niobate-On-Insulator (LNOI) has emerged as a promising platform in the field of integrated photonics. Nonlinear optical processes and fast electro-optic modulation have been reported with outstanding performance in ultra-low loss waveguides. In order to harness the advantages offered by the LNOI technology, suitable fiber-to-chip interconnects operating at different wavelength ranges are demanded. Here we present easily manufacturable, self-imaging apodized grating couplers, featuring a coupling efficiency of the TE0 mode as high as $\simeq 47.1\%$ at $λ$=1550 nm and $\simeq 44.9\%$ at…
Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featuring a carrier suppression over 30 dB. Further, we demonstrate a gigahertz-spaced optical frequency comb featuring more than 200 lines over a 0.6-THz optical bandwidth by recirculating the light in an…
Optical frequency combs have become a very powerful tool in metrology and beyond thanks to their ability to link radio frequencies with optical frequencies via a process known as self-referencing. Typical self-referencing is accomplished in two steps: the generation of an octave-spanning supercontinuum spectrum and the frequency-doubling of one part of that spectrum. Traditionally, these two steps have been performed by two separate optical components. With the advent of photonic integrated circuits, the combination of these two steps has become possible in a single small and monolithic chip. …
