arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2007.06498physics.app-phphysics.optics
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圆片级低损耗锂离子电池光子集成电路

Wafer-scale low-loss lithium niobate photonic integrated circuits

Kevin Luke, Prashanta Kharel, Christian Reimer, Lingyan He, Marko Loncar, Mian Zhang

摘要:

薄膜铌酸锂(LN)光子集成电路(PIC)可以在电光和非线性光学器件中实现超高性能。迄今为止,实现仅限于芯片级概念验证。在这里,我们展示了单片LN PIC制作在4英寸和6英寸的晶圆深紫外光刻和显示平滑和均匀的蚀刻,实现0.27 dB/cm的光传播损耗的晶圆级。我们的研究结果表明,LN PIC从根本上是可扩展的,可以是高度成本效益。

英文摘要:

Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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