利用光刻辅助化学机械蚀刻（PLACE）高生产率制造低损耗的钛酸锂电光调制器
High-production-rate fabrication of low-loss lithium niobate electro-optic modulators using photolithography assisted chemo-mechanical etching (PLACE)
摘要：
宽带宽、低插入损耗、低成本和高生产率的集成薄膜锂酸盐（LN）电光（EO）调制器是当代互连工业和破坏性应用中的基本要素。在这里，我们展示了一个高性能的薄膜LN电光调制器的设计和制造使用光刻辅助化学机械蚀刻（PLACE）技术。我们的器件具有超过50 GHz的3 dB带宽，以及相当低的半波电压长度积2.16 Vcm。我们获得了2.6 dB的光纤到光纤的插入损耗。
英文摘要：
Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
