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arXiv 2401.05970physics.opticsphysics.app-ph
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基于掺铒绝缘体上薄膜铌酸锂的角度多模干涉仪实现的片上波分复用

On-chip wavelength division multiplexing by angled multimode interferometer fabricated on erbium-doped thin film lithium niobate on insulator

Jinli Han, Rui Bao, Rongbo Wu, Zhaoxiang Liu, Zhe Wang, Chao Sun, Zhihao Zhang, Mengqi Li, Zhiwei Fang, Min Wang, Haisu Zhang, Ya Cheng

AI总结:

本文在掺铒薄膜铌酸锂平台上,利用光刻辅助化学机械刻蚀技术制备了基于角度多模干涉仪的低损耗波分复用器,工作于铒离子泵浦与发射波段,插入损耗低于0.7 dB,C波段3-dB带宽超过20 nm,并通过上转换荧光验证了多模干涉特性。

摘要:

基于掺铒绝缘体上薄膜铌酸锂的光子集成电路引起了广泛关注,迄今已展示了多种波导放大器和微激光器。铒离子宽带吸收和发射所促成的宽带工作,要求在同一芯片上实现波长滤波器和复用器的功能集成。本文在掺铒绝缘体上薄膜铌酸锂平台上,采用光刻辅助化学机械刻蚀技术,实现了一种基于角度多模干涉仪的低损耗波分复用器,工作于铒离子的共振泵浦和发射波长(约1480 nm和1530~1560 nm)。所制备器件在两个波长范围内的最小片上插入损耗均小于0.7 dB,在电信C波段测得3-dB带宽大于20 nm。此外,通过铒离子的可见上转换荧光直接观察多模干涉图样,与多模干涉仪中模拟的光传播结果吻合良好。本文还展示并讨论了通过结构设计对波分复用器进行光谱调谐的方法。

英文摘要:

Photonic integrated circuits based on erbium doped thin film lithium niobate on insulator has attracted broad interests with insofar various waveguide amplifiers and microlasers demonstrated. Wideband operation facilitated by the broadband absorption and emission of erbium ions necessitates the functional integration of wavelength filter and multiplexer on the same chip. Here a low-loss wavelength division multiplexer at the resonant pumping and emission wavelengths (~1480 nm and 1530~1560 nm) of erbium ions based on angled multimode interferometer, is realized in the erbium doped thin film lithium niobate on insulator fabricated by the photolithography assisted chemomechanical etching technique. The minimum on-chip insertion losses of the fabricated device are <0.7 dB for both wavelength ranges, and a 3-dB bandwidth of >20 nm is measured at the telecom C-band. Besides, direct visualization of the multimode interference pattern by the visible upconversion fluorescence of erbium ions compares well with the simulated light propagation in the multimode interferometer. Spectral tuning of the wavelength division multiplexer by structural design is also demonstrated and discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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