arXiv 2201.116042022-01-27physics.app-ph

非极性切割铌酸锂绝缘体宏观畴结构纳米级空间分辨率的图形直写

Graphical Direct-Writing of Macroscale Domain Structures with Nanoscale Spatial Resolution in Non-Polar-Cut Lithium Niobate on Insulators

Yuezhao Qian, Ziqing Zhang, Yuezhou Liu, Jingjun Xu, Guoquan Zhang

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摘要：

我们报道了一种图形畴工程技术，通过扫描原子力显微镜的偏置探针针尖，在绝缘体上的非极性切割的锂离子薄膜中制造具有纳米级空间分辨率的宏观畴结构。有人发现，域写入过程是不对称的自发极化Ps，即使尖端诱导极化场是镜像对称的。各种域结构，具有大于毫米的尺寸，同时由纳米级域元素组成，并且具有相对于Ps的任意域壁倾斜角，以图形方式设计，然后直接写入非极性切割的锂离子电池晶体。作为原理演示的证明，在绝缘体上制造周期为600 nm、深度为460 nm且长度为~1 mm的周期性极化x切割的锂酸锂薄膜。该技术可用于集成光学、光电子学和基于绝缘体上钛酸锂的畴壁纳米电子学的器件应用。

英文摘要：

We reported on a graphical domain engineering technique with the capability to fabricate macroscale domain structures with nanoscale spatial resolution in non-polar-cut lithium niobate thin film on insulators through the biased probe tip of scanning atomic force microscopy. It was found that the domain writing process is asymmetric with respect to the spontaneous polarization Ps even though the tip-induced poling field is mirror-symmetric. Various domain structures, with a dimension larger than millimeters while consisting of nanoscale domain elements and with arbitrary domain-wall inclination angle with respect to Ps, were designed graphically and then written directly into non-polar-cut lithium niobate crystals. As a proof of principle demonstration, periodically poled x-cut lithium niobate thin film on insulators with a period of 600 nm, a depth of 460 nm and a length of ~1 mm was fabricated. This technique could be useful for device applications in integrated optics and opto-electronics and domain-wall nanoelectronics based on lithium niobate on insulator.

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