We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle electronic structure of Bi$_4$Te$_3$ in the framework of the $GW$ approximation within many-body perturbation theory. The quasiparticle corrections are found to modify the dispersion of the valence and conduction bands in the vicinity of the Fermi energy, leading to the opening of a small indirect band gap. Based on the analysis of the eigenstates, Bi$_4$Te$_3$ is classified as a dual topological insulator with bulk topological invariants $\mathbb{Z}_2$ (1;111) and magnetic mirror Chern number $n_M=1$. The bulk $GW$ results are used to build a Wannier-functions based tight-binding Hamiltonian that is further applied to study the electronic properties of the (111) surface. The comparison with our angle-resolved photoemission measurements shows excellent agreement between the computed and measured surface states and indicates the dual topological nature of Bi$_4$Te$_3$.
The bulk band structure of the topological insulator \sbte~ is investigated by angle-resolved photoemission spectroscopy. Of particular interest is the dispersion of the uppermost valence band with respect to the topological surface state Dirac point. The valence band maximum has been calculated to be either near the Brillouin zone centre or in a low-symmetry position in the $\barΓ-\bar{M}$ azimuthal direction. In order to observe the full energy range of the valence band, the strongly p-doped crystals are counter-doped by surface alkali adsorption. The data show that that the absolute valence…
Angle-resolved photoemission is a direct probe of the momentum-resolved electronic structure and proved influential in the study of bulk crystals with novel electronic properties. Thanks to recent technical advances, this technique can now be applied for the first time for the study of van der Waals heterostructures built by stacking two-dimensional crystals. In this article we will present the current state of the art in angle-resolved photoemission measurements on two-dimensional materials and review this still young field. We will focus in particular on devices similar to those used in tran…
High resolution angle resolved photoemission measurements and band structure calculations are carried out to study the electronic structure of BaMnSb$_2$. All the observed bands are nearly linear that extend to a wide energy range. The measured Fermi surface mainly consists of one hole pocket around $Γ$ and a strong spot at Y which are formed from the crossing points of the linear bands. The measured electronic structure of BaMnSb$_2$ is unusual and deviates strongly from the band structure calculations. These results will stimulate further efforts to theoretically understand the electronic st…
The electronic state of WTe2, a candidate of type-II Weyl semimetal, is investigated by using laser-based spin- and angle-resolved photoemission spectroscopy (SARPES). We prepare the pair of WTe2 samples, one with (001) surface and the other with (00-1) surface, by "sandwich method", and measure the band structures of each surface separately. The Fermi arcs are observed on both surfaces. We identify that the Fermi arcs on the two surfaces are both originating from surface states. We further find a surface resonance band, which connects with the Fermi-arc band, forming a Dirac-cone-like band di…
Two-dimensional (2D) materials with puckered layer morphology are promising candidates for next-generation opto-electronics devices owing to their anisotropic response to external perturbations and wide band gap tunability with the number of layers. Among them, PdSe2 is an emerging 2D transition-metal dichalcogenide with band gap ranging from 1.3 eV in the monolayer to a predicted semimetallic behavior in the bulk. Here we use angle-resolved photoemission spectroscopy to explore the electronic band structure of PdSe2 with energy and momentum resolution. Our measurements reveal the semiconducti…
Momentum-resolved electronic structure at a buried interface from soft x-ray standing-wave angle-resolved photoemission
角分辨光电子能谱（ARPES）是研究电子结构的一种强有力的技术，但它缺乏直接研究两种材料之间掩埋界面的能力。我们解决这个问题，结合ARPES与软X射线驻波（SW）激发（SWARPES），其中SW配置文件扫描通过样品的深度。研究了典型磁性隧道结La_（0.7）Sr_（0.3）MnO_3/SrTiO_3中的埋层界面。深度和动量分辨地图的Mn 3D EG和T2G状态从中心，散装和界面样区域的La0.7Sr0.3MnO3表现出明显不同的行为与在界面处的Mn键合的变化一致。我们比较的实验结果，国家的最先进的密度泛函和一步光电发射理论，令人鼓舞的协议，这表明广泛的未来应用这种技术。
Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomena with depth-dependent atomic resolution as well as element- and orbital selectivity. Here, we utilize a combination of core-level and valence-band soft x-ray standing-wave photoemission spectroscopy,…
We analyse recently measured nonlinear photoemission spectra from Ag surfaces that reveal resonances whose energies do not scale with the applied photon energy but stay pinned to multiples of bulk plasmon energy $\hbarω_p$ above the Fermi level. To elucidate these unexpected and peculiar features we investigate the spectra of plasmons generated in a solid by the optically pumped electronic polarization and their effect on photoemission. By combining quadratic response formalism for calculations of photoemission yield, a nonperturbative approach to inelastic electron scattering, and first-princ…
HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron s…
In the present work, we investigate the electronic structure of the two-dimensional (2D) ferromagnet Cr2Ge2Te6 by photoemission spectroscopy and ab initio calculations. Our results demonstrate the presence of multiple hole-type bands in the vicinity of the Fermi level indicating that the material can support high electrical conductivity by manipulating the chemical potential. Also, our photon energy dependent angle resolved photoemission experiment revealed that several of the hole bands exhibit weak dispersion with varied incident photon energy providing experimental signature for its two dim…
Bulk Fermi surface coexistence with Dirac surface state in Bi$_2$Se$_3$: a comparison of photoemission and Shubnikov-de Haas measurements
Shubnikov de Haas（SdH）振荡和角分辨光电子能谱（ARPES）被用来探测Bi 2Se 3单晶的费米面。我们发现，SdH和ARPES探针定量同意测量的有效质量和散装带色散。在高载流子密度的样品中，两个探针也同意在费米能级EF的确切位置，但对于较低的载流子密度的样品的差异出现在EF的位置。特别是，SdH揭示了载流子密度低至10^17cm-3的样品的体三维费米表面。我们提出了一个简单的机制来解释这些差异，并讨论了现有的和未来的拓扑绝缘体输运研究的后果。
Estimate of the Coulomb Correlation Energy in CeAg$_2$Ge$_2$ from Inverse Photoemission and High Resolution Photoemission Spectroscopy
用高分辨光电子能谱和逆光电子能谱分别研究了CeAg $_2$ Ge $_2$单晶的占据和未占据电子结构。高分辨率光电子能谱揭示了Ce $4f$态在占据的电子结构中的清晰特征，这是由于分辨率差而没有观察到的。在这个系统中的库仑相关能已被确定实验从$4f$状态的位置以上和以下的费米能级。理论上的关联能已确定通过使用第一原理密度泛函计算的广义梯度近似考虑到强的原子内（现场）相互作用哈伯德$U_{eff}$长期。虽然用不同的$U_{eff}$计算的价带没有表现出明显的差异，但在导带中观察到了实质性的变化。从理论和实验两方面估计CeAg $_2$ Ge $_2$的相关能为$\approx$ 4.2eV。
We present the results of resonant photoemission spectroscopy experiments on the Mo$_{1-x}$Re$_{x}$ alloy compositions spanning over two electronic topological transitions (ETT) at the critical concentrations $x_{C1}$ = 0.05 and $x_{C2}$ = 0.11. The photoelectrons show an additional resonance ($R3$) in the constant initial state (CIS) spectra of the alloys along with two resonances ($R1$ and $R2$) which are similar to those observed in molybdenum. All the resonances show Fano-like line shapes. The asymmetry parameter $q$ of the resonances $R1$ and $R3$ of the alloys is observed to be large and…
Measurements of electronic band structure in CeCoGe$_3$ by angle-resolved photoemission spectroscopy
University of California, Davis（加州大学戴维斯分校）；Lawrence Berkeley National Lab（劳伦斯伯克利国家实验室）；Virginia Tech（弗吉尼亚理工大学）；Virginia Tech National Security Institute（弗吉尼亚理工学院国家安全研究所）；Virginia Tech Center for Quantum Information Science and Engineering（弗吉尼亚理工学院量子信息科学与工程中心）
Correlation of conductivity and angle integrated valence band photoemission characteristics in single crystal iron perovskites for 300 K < T < 800 K: Comparison of surface and bulk sensitive methods
Measurement of intrinsic Dirac fermion cooling on the surface of a topological insulator Bi$_2$Se$_3$ using time- and angle-resolved photoemission spectroscopy
我们进行时间和角度分辨的光电子能谱的原型拓扑绝缘体Bi $_2$ Se $_3$的表面和体电子光激发后的超快动力学研究。通过分析表面态和体能带谱的演化，分别得到了它们的电子温度和化学势弛豫动力学。这些动力学揭示了强声子辅助的表面-体耦合在高晶格温度和总抑制在低晶格温度的表面和体之间的非弹性散射。在这个低温制度下，独特的冷却狄拉克费米子在TI的声学声子表现出通过幂律依赖的表面温度衰减速率载流子密度。
The physics of quantum materials is dictated by many-body interactions and mathematical concepts such as symmetry and topology that have transformed our understanding of matter. Angle-resolved photoemission spectroscopy (ARPES), which directly probes the electronic structure in momentum space, has played a central role in the discovery, characterization, and understanding of quantum materials ranging from strongly-correlated states of matter to those exhibiting non-trivial topology. Over the past two decades, ARPES as a technique has matured dramatically with ever-improving resolution and cont…
