arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0804.2712cond-mat.mtrl-scicond-mat.other
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Fe $_{3-x}V$ _x$Si电子结构的光电子能谱研究

Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy

Y. T. Cui, A. Kimura, K. Miyamoto, K. Sakamoto, T. Xie, S. Qiao, M. Nakatake, K. Shimada, M. Taniguchi, S. -i. Fujimori, Y. Saitoh, K. Kobayashi, T. Kanomata, O. Nashima

摘要:

用光电子能谱(PES)研究了Heusler型化合物Fe $_{3-x}V$ x$Si在x = 0 ~ x = 1浓度范围内的电子结构.观察到的Si 2 p芯能级和主要价带结构的移动表明随着x的增加,化学势向更高的能量移动。同时也阐明了费米边态密度是由V3 d和Fe 3d导出态的协同作用引起的。此外,费米边附近的光谱强度随x的增加而减小,表明在大x时形成了赝能隙。

英文摘要:

The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.

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