评论“角度分辨光电子能谱对GaMnAs的最新实验结果的替代解释[Sci. Rep. 6，27266（2016）]”。Kobayashi等人，arXiv：1608.07718
Comment on "Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]" by M. Kobayashi et al., arXiv:1608.07718
摘要：
最近，Kobayashi等人（arXiv：1608.07718;参考文献1）对我们的角度分辨光电子能谱（ARPES）对稀铁磁半导体（Ga，Mn）As的结果提出了另一种解释。他们声称我们的ARPES数据[科学。Rep. 6，27266（2016）;参考文献2]可以通过将费米能级EF定位在价带顶上方来解释，支持铁磁（Ga，Mn）As的杂质带模型。在这篇评论中，我们表明Kobayashi等人关于EF的谱带位置的分配与我们的数据不一致。通过比较ARPES的结果与能带结构的计算，我们清楚地表明，EF驻留在价带根据p-d齐纳模型。
英文摘要：
Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute ferromagnetic semiconductor (Ga,Mn)As. They claim that our ARPES data [Sci. Rep. 6, 27266 (2016); ref. 2] can be explained by locating the Fermi level EF above the valence-band top, supporting the impurity-band model of ferromagnetic (Ga,Mn)As. In this comment, we show that the assignment of bands' positions in respect to EF by Kobayashi et al. is not consistent with our data. By comparing the ARPES result to band-structure calculations, we demonstrate clearly that EF resides inside the valence band in accordance with the p-d Zener model.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
