对GaMnAs的角分辨光电子能谱最近实验结果的另一种解释[Sci. [美国专利第6，27266（2016）号]
Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]
摘要：
澄清费米能级（$E_\mathrm{F}$）的位置对于理解原型铁磁半导体Ga $_{1-x}$ Mn $_x$ As（GaMnAs）中铁磁性的起源是重要的。在最近的出版物中，Souma $et$ $al$ . [Sci. Rep. $\mathbf{6}$，27266（2016）]使用角分辨光电子能谱（ARPES）研究了GaMnAs的能带结构和$E_\mathrm{F}$位置，并得出结论，$E_\mathrm{F}$位于价带（VB）中。然而，这一结论与GaMnAs的一些最近的实验结果相矛盾，这些结果表明$E_\mathrm{F}$位于杂质带（IB）中的VB最大值上方。在这里，我们展示了他们的ARPES实验的另一种解释，这与最近的实验一致，并支持$E_\mathrm{F}$位于IB中VB最大值以上的图片。
英文摘要：
Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.
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