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arXiv 0803.0052cond-mat.mtrl-sci
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角分辨光电子能谱研究\BiTe电子结构中的自旋轨道相互作用

Spin-orbit interaction effect in the electronic structure of \BiTe \ observed by angle-resolved photoemission spectroscopy

Han-Jin Noh, H. Koh, S. -J. Oh, J. -H. Park, H. -D. Kim, J. D. Rameau, T. Valla, T. Kidd, P. D. Johnson, Y. Hu, Q. Li

摘要:

用角分辨光电子能谱(ARPES)研究了$p$型掺杂\BiTe的电子结构,实验证实了高热电优值的机理.我们的ARPES研究表明,带边位于$Γ$线的布里渊区,这提供了直接的观察,自旋-轨道相互作用是一个关键因素,以了解电子结构和相应的热电性能的\BiTe。连续的时间相关的ARPES测量也表明,在$\underlineΓ$点附近的电子交叉$_F$的类电子带形成后一个小时的分裂晶体。我们解释这些表面状态引起的表面能带弯曲,可能是由于五倍层间距离的变化\BiTe。

英文摘要:

The electronic structure of $p$-type doped \BiTe is studied by angle resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the $Γ$-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of \BiTe. Successive time dependent ARPES measurement also reveals that the electron-like bands crossing E$_F$ near the $\underlineΓ$ point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of \BiTe.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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