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arXiv 1702.08307cond-mat.mtrl-sci
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纳米点角分辨光电子能谱研究三层石墨烯的电子结构

Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy

Changhua Bao, Wei Yao, Eryin Wang, Chaoyu Chen, José Avila, Maria C. Asensio, Shuyun Zhou

摘要:

多层石墨烯中的晶体学堆叠顺序在决定其电子结构方面起着重要作用。在三层石墨烯中,菱面体堆叠(ABC)特别有趣,表现出具有电场可调带隙的平坦带。这种电子结构不同于简单的六方堆积(AAA)或典型的Bernal堆积(ABA),并且在纳米电子学、光电子学应用中是有希望的。到目前为止,干净的实验电子光谱上的前两个堆叠是失踪,因为样品通常是太小的尺寸(微米或纳米尺度),以解决传统的角度分辨光电子能谱(ARPES)。在这里,通过使用ARPES与纳米点束尺寸(NanoARPES),我们提供了直接的实验证据的三个不同的堆叠的三层石墨烯的共存,并直接揭示其独特的电子结构。通过对实验数据的拟合,我们提供了描述不同堆叠方式的三层石墨烯电子结构的重要实验能带参数。

英文摘要:

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (um or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here by using ARPES with nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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