The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (um or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here by using ARPES with nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings.
Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
Doping Evolution of Nodal Electron Dynamics in Trilayer Cuprate Superconductor Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ Revealed by Laser-Based Angle-Resolved Photoemission Spectroscopy
Electronic structure and correlations in planar trilayer nickelate Pr4Ni3O8
最近发现的空穴掺杂平面镍酸盐R1-xSrNiO 2(R=Pr,Nd)的超导电性提出了一个基本的问题,这些Ni 1+化合物的电子结构和电子相关性如何比较的Cu 2+铜酸盐超导体。在这里,我们提出了一个角度分辨光电子能谱(ARPES)研究的三层镍酸盐Pr 4 Ni 3 O 8,揭示了电子结构和费米表面非常相似的空穴掺杂的铜酸盐,但有一些关键的差异。具体地说,费米表面的主要部分与双层铜氧化物的费米表面非常相似,但有一个额外的部分可以容纳额外的空穴掺杂。我们发现,电子的相关性是镍酸盐的两倍强,几乎是k-独立的,这表明它们起源于一个本地的效果可能的莫特相互作用,而铜酸盐的相互作用是有点不那么本地。尽管如此,镍酸盐仍然表现出近似线性的能量和线性的温度散射率。理解这两个相关的强关联新型超导体家族之间的相似性和差异是一个重要的挑战。
Direct Observation of Unidirectional Density Wave and Band splitting in a Single-Domain Trilayer Nickelate Pr$_4$Ni$_3$O$_{10}$
University of Science and Technology of China(中国科学技术大学);Fudan University(复旦大学);Shanghai Research Center for Quantum Sciences(上海量子科学研究与交流中心);University of Chinese Academy of Sciences(中国科学院大学);Shanghai Advanced Research Institute, Chinese Academy of Sciences(中国科学院上海高等研究院);Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(中国科学院上海微系统与信息技术研究所)
Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$
Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10
Tsinghua University(清华大学);Lanzhou University(兰州大学);Songshan Lake Materials Laboratory(松山湖材料实验室);ShanghaiTech University(上海科技大学);University of Oxford(牛津大学)
Electronic Origin of Density Wave Orders in a Trilayer Nickelate
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences(中国科学院物理研究所凝聚态物理国家实验室);School of Physical Sciences, University of Chinese Academy of Sciences(中国科学院大学物理科学学院);Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University(中山大学物理学院广东省磁电物理与器件重点实验室);Technical Institute of Physics and Chemistry, Chinese Academy of Sciences(中国科学院化学物理研究所);Institute of Theoretical Physics, Chinese Academy of Sciences(中国科学院理论物理研究所)