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arXiv 1105.4074cond-mat.mtrl-sci
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Ir(111)衬底上石墨烯的角分辨光电子能谱研究

Graphene on Ir(111) characterized by angle-resolved photoemission

M. Kralj, I. Pletikosic, M. Petrovic, P. Pervan, M. Milun, A. T. N'Diaye, C. Busse, T. Michely, J. Fujii, I. Vobornik

摘要:

角分辨光电子能谱学(ARPES)被广泛用于表征Ir(111)石墨烯的电子结构与制备工艺的关系。ARPES研究结果表明,单独或与化学气相沉积相结合的程序升温生长导致石墨烯显示尖锐的电子带。的狄拉克锥的光电发射强度作为一个功能的石墨烯面积的增加进行监测。系统中存在的莫尔超结构的电子特征,即微型间隙和复制带被检查并用作评估石墨烯均匀性的稳健特征。分析了π波段的整体色散。最后,通过光子能量的变化,展示了π带和σ带强度的相对变化。

英文摘要:

Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moiré superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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