Epitaxial thin films of Fe doped SrTiO3 have been studied by the use of resonant photoemission. This technique allowed to identify contributions of the Fe and Ti originating electronic states to the valence band. Two valence states of iron Fe2+ and Fe3+, detected on the base of XAS spectra, appeared to form quite different contributions to the valence band of SrTiO3. The electronic states within the in-gap region can be attributed to Fe2+, Fe3+ and Ti3+ ions. Fe2+ originating states which can be connected to the presence of oxygen vacancies form a broad band reaching binding energies of about 0.5 eV below the conduction band while Fe3+ states form in the gap a sharp feature localized just above the top of the valence band. It has been shown that Fe doping induced Ti originating states in the energy gap which can be related to hybridization of Ti and Fe 3d orbitals.
In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect transistors by PDI-8CN2. We show that an accumulation heterojunction is formed at the interface between the organic semiconductors and that the consequent band bending in T6 caused by PDI-8CN2 deposition can be addressed as the cause of the surface doping in T6 transistors. Several evidences of this phenomenon have been furnished both by electrical transport and photoemission measurements, namely the increase in the conductivity, the shift of the threshold voltage and the shift of the T6 HOMO peak towards h…
Multiferroic bismuth ferrite (BiFeO3) thin films were prepared by pulsed laser deposition (PLD) technique. Electronic structures of the film have been studied by in situ photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Both the Fe 2p PES and XAS spectra show that Fe ion is formally in +3 valence state. The Fe 2p and O K edge XAS spectra indicate that the oxygen octahedral crystal ligand field splits the unoccupied Fe 3d state to t2g and eg states. Valence band Fe 2p-3d resonant photoemission results indicate that hybridization between Fe 3d and O 2p plays important rol…
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the int…
Resonant photoemission spectroscopy has been used to investigate the character of Fe 3d states in FeAl alloy. Fe 3d states have two different character, first is of itinerant nature located very close to the Fermi level, and second, is of less itinerant (relatively localized character), located beyond 2 eV below the Fermi level. These distinct states are clearly distinguishable in the resonant photoemission data. Comparison between the results obtained from experiments and first principle based electronic structure calculation show that the origin of the itinerant character of the Fe 3d states…
A recent, major, puzzle in the core-level photoemission spectra of doped manganites is the observation of a 1-2 eV wide shoulder with intensity varying with temperature T as the square of the magnetization over a T scale of order 200K, an order of magnitude less than electronic energies. This is addressed and resolved here, by extending a recently proposed two electron fluid l-b model for these systems to include core-hole effects. The shoulder arises from a rapid redistribution of e_g electron density, as a function of T, between the highly localized (l) and band-like (b) states. Furthermore,…
The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the form…
We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the position of the resonant Raman-Auger photoelectrons from the Mn 2p3p3d decay. These results allow us to achieve a rough estimate of the half-metallic spin half-gap.
We have studied the chemical potential shift in La$_{2-x}$Sr$_x$NiO$_4$ and the charge ordering transition in La$_{1.67}$Sr$_{0.33}$NiO$_4$ by photoemission spectroscopy. The result shows a large ($\sim$ 1 eV/hole) downward shift of the chemical potential with hole doping in the high-doping regime ($δ\gtrsim$ 0.33) while the shift is suppressed in the low-doping regime ($δ\lesssim$ 0.33). This suppression is attributed to a segregation of doped holes on a microscopic scale when the hole concentration is lower than $δ\simeq 1/3$. In the $δ= 1/3$ sample, the photoemission intensity at the chemic…
Iron resonant valance band photoemission spectra of Sr substituted LaFe0.75Ni0.25 O3-δ have been recorded across the Fe 2p - 3d absorption threshold to obtain Fe specific spectral information on the 3d projected partial density of states. Comparison with La1-xSrxFeO3 resonant VB PES literature data suggests that substitution of Fe by Ni forms electron holes which are mainly O 2p character. Substitution of La by Sr increases the hole concentration to an extent that the eg structure vanishes. The variation of the eg and t2g structures is paralleled by the changes in the electrical conductivity.
Angle-resolved valence-band resonant photoemission of nickel metal has been measured close to the 2p core-level thresholds with synchrotron radiation. The well-known 6-eV correlation satellite has an intensity enhancement of about two orders of magnitude at resonance. The angular dependence of the photoemission intensity has been studied as function of photon energy and provides unambiguous evidence for interference effects all the way up to the resonance maximum. The observation of different angular asymmetries, β, for the valence band and the satellite is discussed in connection to the origi…
A first principles approach, based on the real space multiple scattering Green's function method, is presented for spin- and angle-resolved resonant photoemission from magnetic surfaces. It is applied to the Fe(010) valence band photoemission excited with circularly polarized X-rays around the Fe L3 absorption edge. When the photon energy is swept through the Fe 2p-3d resonance, the valence band spectra are strongly modified in terms of absolute and relative peak intensities, degree of spin-polarization and light polarization dependence. New peaks in the spin-polarized spectra are identified a…
The $(π,π)$ shadow band (SB) in La-based cuprate family (La214) was studied by angle-resolved photoemission spectroscopy (ARPES) over a wide doping range from $x=0.01$ to $x=0.25$. Unlike the well-studied case of the Bi-based cuprate family, an overall strong, monotonic doping dependence of the SB intensity at the Fermi level ($E_F$) was observed. In contrast to a previous report for the presence of the SB only close to $x=1/8$, we found it exists in a wide doping range, associated with a doping-independent $(π,π)$ wave vector but strongly doping-dependent intensity: It is the strongest at $x\…
The electronic structure of pulsed laser deposited Mo1-xFexO2 (x=0, 0.02 and 0.05) thin films has been investigated using resonant photoemission spectroscopy near Mo-4p absorption edge. In all the samples a broad Fano- like resonance peak at ~46 eV is observed in the whole area of the valence band which indicates the contribution of the Mo-4d states in the entire valence band region. The doping of Fe in these films leads to decrease in Mo 4d states contributing to electronic states at lower binding energy region. In addition to this, we also observe a shoulder at 4.9 eV in the valence band spe…
Electronic structures of the tetradymites, Bi$_2$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Se$_3$, containing various dopants and vacancies, are studied using the first principles calculations methods. We focus on the possibility of formation of the resonant levels (RL), confirming the formation of the RL by Sn in Bi$_2$Te$_3$, and predicting similar behavior of Sn in Bi$_2$Te$_2$Se and Bi$_2$Se$_3$. Vacancies, which are likely present on the chalcogen atoms in the real samples of Bi$_2$Te$_2$Se and Bi$_2$Se$_3$, are also studied and their charged donor and resonant behavior is discussed. Doping of the…
Using a combination of {\it ab initio} bandstructure methods and dynamical mean-field theory we study the single-particle spectrum of the prototypical charge-transfer insulator NiO. Good agreement with photoemission and inverse-photoemission spectra is obtained for both stoichiometric and hole-doped systems. In spite of a large Ni-$d$ spectral weight at the top of the valence band the doped holes are found to occupy mainly the ligand $p$ orbitals. Moreover, high hole doping leads to a significant reconstruction of the single-particle spectrum accompanied by a filling of the correlation gap.
We demonstrated experimentally a direct way to probe a hidden propensity to the formation of spin density wave (SDW) in a non-magnetic metal with strong Fermi surface nesting. Substituting Fe for a tiny amount of Cu (1%) induced an incommensurate magnetic order below 20 K in heavily-overdoped La2-xSrxCuO4 (LSCO). Elastic neutron scattering suggested that this order cannot be ascribed to the localized spins on Cu or doped Fe. Angle-resolved photoemission spectroscopy (ARPES), combined with numerical calculations, revealed a strong Fermi surface nesting inherent in the pristine LSCO that likely …
We study the mixed valence transition ($T$$_{v}$ $\sim$80 K) in EuNi$_{2}$(Si$_{0.2}$Ge$_{0.8}$)$_{2}$ using Eu 3$d-4f$ X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (RESPES). The Eu$^{2+}$ and Eu$^{3+}$ main peaks show a giant resonance and the spectral features match very well with atomic multiplet calculations. The spectra show dramatic temperature ($T$)-dependent changes over large energies ($\sim$10 eV) in RESPES and XAS. The observed non-integral mean valencies of $\sim$2.35 $\pm$ 0.03 ($T$ = 120 K) and $\sim$2.70 $\pm$ 0.03 ($T$ = 40 K) indicate homogeneous…
Doping Evolution of Nodal Electron Dynamics in Trilayer Cuprate Superconductor Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ Revealed by Laser-Based Angle-Resolved Photoemission Spectroscopy
Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular di…
We study the formation of epitaxial graphene on Ru(0001) using fast x-ray photoelectron spectroscopy during the growth process. The assignment of different C 1s and Ru 3d core level components and their evolution during the growth process gives a detailed insight into the graphene formation and the strongly varying graphene-Ru interaction strength within the large moire unit cell. Subsequent intercalation of oxygen can be achieved at elevated temperature and the core level spectra show a conversion of the strongly corrugated to quasi free-standing graphene, characterised by a single narrow C 1…
The modifications in the electronic structure of Ni_{2+x}Mn_{1-x}Ga by Ni doping have been studied using full potential linearized augmented plane wave method and ultra-violet photoemission spectroscopy. Ni 3d related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin DOS with Ni doping, while the majority-spin DOS remains almost unchanged. The total magnetic moment decreases with excess Ni. The total energy calculations corroborate the experimentally reported changes in the Curie temperature and the martensitic transition temperature …
We have studied the electronic structure of epitaxially grown thin films of La$_{1-x}$Sr$_x$FeO$_3$ by {\it in-situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The Fe 2$p$ and valence-band PES spectra and the O $1s$ XAS spectra of LaFeO$_3$ have been successfully reproduced by configuration-interaction cluster-model calculation and, except for the satellite structure, by band-structure calculation.From the shift of the binding energies of core levels, the chemical potential was found to be shifted downward as $x$ was increased. Among the three peaks …
We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron doping through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon couplin…
A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculat…
We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with doping, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a doping-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band …
An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy fi…
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first principle calculations we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution towards the integration of graphene with conven…
In FeSe-derived superconductors, the lack of a systematic and clean control on the carrier concentration prevents the comprehensive understanding on the phase diagram and the interplay between different phases. Here by K dosing and angle resolved photoemission study on thick FeSe films and FeSe$_{0.93}$S$_{0.07}$ bulk crystals, the phase diagram of FeSe as a function of electron doping is established, which is extraordinarily different from other Fe-based superconductors. The correlation strength remarkably increases with increasing doping, while an insulting phase emerges in the heavily overd…
The band structures of pure and hole doped La$_2$CuO$_4$ with antiferromagnetic (AFM) spin-fluctuations are calculated and compared to spectral weights of ARPES. It is shown that observations of coexisting Fermi surface (FS) arcs and closed FS pockets are consistent with modulated AFM spin fluctuations of varying wave lengths. Large variations of strong spin fluctuations make the outer part of the FS break diffuse at low doping. This part of the FS is suppressed at high doping when spin fluctuations are weak. The resulting superimposed spectral weight has features both from FS arcs and closed …
Eu2Ir2O7, a candidate Weyl semimetal, shows an insulator-to-metal transition as a function of Bi substitution at the Eu site. In this work, we investigate the (Eu_1-xBi_x)2Ir2O7 series via Hard X-ray Photoemission Spectroscopy (HAXPES), where substitution of larger Bi3+ for Eu3+ is reported to result in an anomalous lattice contraction (20 %) for low Bi doping (3.5 %). Using HAXPES, we confirm that all the cations retain their nominal valence state throughout the series. The asymmetric nature of Bi core-level spectra for compositions in the metallic region indicates that Bi contributes to the …
For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (…
Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic proper…
Resonant valence-band X-ray photoelectron spectra (ResPES) excited near 2p$_{3/2}$ core level energies, 2p X-ray photoelectron spectra (XPS) and L$_{3,2}$ X-ray absorption spectra (XAS) of Ti and Mn in single crystal of 1T-Mn$_2$TiSe$_2$ were studied for the first time. The ionic-covalent character of bonds formed by Mn atoms with the neighboring Se atoms in the octahedral coordination is established. From the XPS and XAS measurements compared with results of atomic multiplet calculations of Ti and Mn L$_{3,2}$ XAS it is found that Ti atoms are in ionic state of 4+ and Mn atoms are in the stat…
In this work, the thermal transport properties of thorium dioxide (ThO$_2$, thoria) with low levels of substitutional uranium (U) doping are explored. We observe strong indications of resonant phonon scattering, an interaction between phonons and electronic degrees of freedom, induced by this doping in addition to common ``impurity'' scattering due to mass and interatomic force constant differences. Uranium doping levels of 6\%, 9\%, and 16\% were studied in a single hydrothermally synthesized U-doped thoria crystal with spatially-varying U doping levels. Within this crystal, isoconcentration …
We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites, where $R=$La,$\dots$,Lu. A fundamental characteristic of these vanadium $d^2$ compounds with partly filled $t_{2g}$ valence orbitals is the persistence of spin and orbital order up to high doping, in contrast to the loss of magnetic order in high-$T_c$ cuprates at low defect concentration. We demonstrate that the disordered electronic structure of doped Mot…
We have studied the temperature dependence of the photoemission spectra of Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO) with $x=0.25$, 0.3 and 0.5. For $x=0.3$ and 0.5, we observed a gap in the low-temperature CE-type charge-ordered (CO) phase and a pseudogap with a finite intensity at the Fermi level ($E_F$) in the high-temperature paramagnetic insulating (PI) phase. Within the CO phase, the spectral intensity near $E_F$ gradually increased with temperature. These observations are consistent with the results of Monte Carlo simulations on a model including charge ordering and ferromagnetic fluctuations [H. …
Perovskite-type BiNiO$_3$ is an insulating antiferromagnet in which a charge disproportionation occurs at the Bi site. La substitution for Bi suppresses the charge disproportionation and makes the system metallic. We have measured the photoemission and x-ray absorption (XAS) spectra of Bi$_{1-x}$La$_{x}$NiO$_{3}$ to investigate how the electronic structure changes with La doping. From Ni $2p$ XAS, we observed an increase of the valence of Ni from 2+ toward 3+. Combined with the core-level photoemission study, it was found that the average valence of Bi remains $\sim 4+$ and that the Ni valence…
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process rep…
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy (ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for ele…
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.
We have studied the effects of band filling and bandwidth control on the chemical potential in perovskite manganites $R_{1-x}A_x$MnO$_3$ ($R$ : rare earth, $A$ : alkaline earth) by measurements of core-level photoemission spectra. A suppression of the doping-dependent chemical potential shift was observed in and around the CE-type charge-ordered composition range, indicating that there is charge self-organization such as stripe formation or its fluctuations. As a function of bandwidth, we observed a downward chemical potential shift with increasing bandwidth due to the reduction of the orthorh…
Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscopy studies of the electronic structure and the scattering rates upon adsorption of various magnetic and non-magnetic impurities on the surface of Bi$_2$Se$_3$, a model topological insulator. We reveal …
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by hig…
By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentrati…
The electronic structure of FeSe thin films grown on SrTiO3 substrate is studied by angle-resolved photoemission spectroscopy (ARPES). We reveal the existence of Dirac cone band dispersions in FeSe thin films thicker than 1 Unit Cell below the nematic transition temperature, whose apex are located -10 meV below Fermi energy. The evolution of Dirac cone electronic structure for FeSe thin films as function of temperature, thickness and cobalt doping is systematically studied. The Dirac cones are found to be coexisted with the nematicity in FeSe, disappear when nematicity is suppressed. Our resul…
Transition metal doping is known to increase the photosensitivity to visible light for photocatalytically active ZnO. We report on the electronic structure of nano-crystalline Fe:ZnO, which has recently been shown to be an efficient photocatalyst. The photo-activity of ZnO reduces Fe from 3+ to 2+ in the surface region of the nano-crystalline material. Electronic states corresponding to low-spin Fe 2+ are observed and attributed to crystal field modification at the surface. These states can be important for the photocatalytic sensitivity to visible light due to their deep location in the ZnO b…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to t…
