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arXiv 1306.0841cond-mat.str-elcond-mat.mtrl-sci
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Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As

J. Fujii, B. R. Salles, M. Sperl, S. Ueda, M. Kobata, K. Kobayashi, Y. Yamashita, P. Torelli, M. Utz, C. S. Fadley, A. X. Gray, J. Minar, J. Braun, H. Ebert, I.… 展开作者

J. Fujii, B. R. Salles, M. Sperl, S. Ueda, M. Kobata, K. Kobayashi, Y. Yamashita, P. Torelli, M. Utz, C. S. Fadley, A. X. Gray, J. Minar, J. Braun, H. Ebert, I. Di Marco, O. Eriksson, P. Thunström, G. H. Fecher, S. Ouardi, H. Stryhanyuk, E. Ikenaga, C. H. Back, G. van der Laan, G. Panaccione

英文摘要:

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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