arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2109.06138cond-mat.mtrl-sci
收藏

氧化物准二维电子气中铁磁性的轨道选择开关

Orbital selective switching of ferromagnetism in an oxide quasi two-dimensional electron gas

R. Di Capua, M. Verma, M. Radovic, V. N. Strocov, C. Piamonteze, E. B. Guedes, N. Plumb, Yu Chen, M. D'Antuono, G. M. De Luca, E. Di Gennaro, D. Stornaiuolo, D.… 展开作者

R. Di Capua, M. Verma, M. Radovic, V. N. Strocov, C. Piamonteze, E. B. Guedes, N. Plumb, Yu Chen, M. D'Antuono, G. M. De Luca, E. Di Gennaro, D. Stornaiuolo, D. Preziosi, B. Jouault, F. Miletto Granozio, A. Sambri, R. Pentcheva, G. Ghiringhelli, M. Salluzzo

摘要:

准二维电子气(q2 DEG)中的多轨道物理触发了在大块材料中未观察到的独特现象,例如非常规超导性和磁性。在这里,我们研究了在LaAlO $_{3}$,EuTiO $_{3}$和SrTiO $_{3}$带绝缘体之间的(001)界面处形成的氧化物q2 DEG中自旋极化的轨道选择性切换机制。通过使用密度泛函理论计算、输运、磁性和X射线光谱测量,我们发现EuTiO 3层中以及与SrTiO 3的界面处具有3d $_{xz,yz}$轨道特征的钛带填充导致Eu-4f $_{3}$之间交换相互作用的反铁磁到铁磁切换。$^{7}$的磁矩。结果解释了在该q2 DEG中观察到的载流子密度依赖的铁磁相关性和异常霍尔效应,并展示了理论和实验相结合的方法如何能够更深入地理解新颖的电子相,并作为先进电子应用的材料设计的指导。

英文摘要:

Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3d$_{xz,yz}$ orbital character in the EuTiO3 layer and at the interface with SrTiO$_{3}$ induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f$^{7}$ magnetic moments. The results explain the observation of the carrier density dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of novel electronic phases and serve as a guide for the materials design for advanced electronic applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑